These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

262 related articles for article (PubMed ID: 26667402)

  • 1. Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier.
    Ling ZP; Sakar S; Mathew S; Zhu JT; Gopinadhan K; Venkatesan T; Ang KW
    Sci Rep; 2015 Dec; 5():18000. PubMed ID: 26667402
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts.
    Ma Y; Shen C; Zhang A; Chen L; Liu Y; Chen J; Liu Q; Li Z; Amer MR; Nilges T; Abbas AN; Zhou C
    ACS Nano; 2017 Jul; 11(7):7126-7133. PubMed ID: 28653827
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature.
    Liu X; Ang KW; Yu W; He J; Feng X; Liu Q; Jiang H; Dan Tang ; Wen J; Lu Y; Liu W; Cao P; Han S; Wu J; Liu W; Wang X; Zhu D; He Z
    Sci Rep; 2016 Apr; 6():24920. PubMed ID: 27102711
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Enhancing ambipolar carrier transport of black phosphorus field-effect transistors with Ni-P alloy contacts.
    Park H; Kim J
    Phys Chem Chem Phys; 2018 Sep; 20(35):22439-22444. PubMed ID: 30062335
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Fundamental Limits on the Subthreshold Slope in Schottky Source/Drain Black Phosphorus Field-Effect Transistors.
    Haratipour N; Namgung S; Oh SH; Koester SJ
    ACS Nano; 2016 Mar; 10(3):3791-800. PubMed ID: 26914179
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling.
    Du Y; Liu H; Deng Y; Ye PD
    ACS Nano; 2014 Oct; 8(10):10035-42. PubMed ID: 25314022
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric.
    Ling ZP; Zhu JT; Liu X; Ang KW
    Sci Rep; 2016 May; 6():26609. PubMed ID: 27222074
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers.
    Ra HS; Lee AY; Kwak DH; Jeong MH; Lee JS
    ACS Appl Mater Interfaces; 2018 Jan; 10(1):925-932. PubMed ID: 29256593
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Black phosphorus transistors with van der Waals-type electrical contacts.
    Quhe R; Wang Y; Ye M; Zhang Q; Yang J; Lu P; Lei M; Lu J
    Nanoscale; 2017 Sep; 9(37):14047-14057. PubMed ID: 28894869
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Low Schottky barrier black phosphorus field-effect devices with ferromagnetic tunnel contacts.
    Kamalakar MV; Madhushankar BN; Dankert A; Dash SP
    Small; 2015 May; 11(18):2209-16. PubMed ID: 25586013
    [TBL] [Abstract][Full Text] [Related]  

  • 11. How Important Is the Metal-Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus?
    Yang L; Charnas A; Qiu G; Lin YM; Lu CC; Tsai W; Paduano Q; Snure M; Ye PD
    ACS Omega; 2017 Aug; 2(8):4173-4179. PubMed ID: 31457714
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Low-Power Transistors with Ideal p-type Ohmic Contacts Based on VS
    Cao Z; Zhu L; Yao K
    ACS Appl Mater Interfaces; 2024 Apr; 16(15):19158-19166. PubMed ID: 38572998
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Oxide-confined formation of germanium nanowire heterostructures for high-performance transistors.
    Tang J; Wang CY; Xiu F; Lang M; Chu LW; Tsai CJ; Chueh YL; Chen LJ; Wang KL
    ACS Nano; 2011 Jul; 5(7):6008-15. PubMed ID: 21699197
    [TBL] [Abstract][Full Text] [Related]  

  • 14. High-Performance Two-Dimensional InSe Field-Effect Transistors with Novel Sandwiched Ohmic Contact for Sub-10 nm Nodes: a Theoretical Study.
    Zhu J; Ning J; Wang D; Zhang J; Guo L; Hao Y
    Nanoscale Res Lett; 2019 Aug; 14(1):277. PubMed ID: 31418092
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Self-aligned U-gate carbon nanotube field-effect transistor with extremely small parasitic capacitance and drain-induced barrier lowering.
    Ding L; Wang Z; Pei T; Zhang Z; Wang S; Xu H; Peng F; Li Y; Peng LM
    ACS Nano; 2011 Apr; 5(4):2512-9. PubMed ID: 21370813
    [TBL] [Abstract][Full Text] [Related]  

  • 16. High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes.
    Huang YT; Chen YH; Ho YJ; Huang SW; Chang YR; Watanabe K; Taniguchi T; Chiu HC; Liang CT; Sankar R; Chou FC; Chen CW; Wang WH
    ACS Appl Mater Interfaces; 2018 Oct; 10(39):33450-33456. PubMed ID: 30191709
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope.
    Wang J; Cai L; Chen J; Guo X; Liu Y; Ma Z; Xie Z; Huang H; Chan M; Zhu Y; Liao L; Shao Q; Chai Y
    Sci Adv; 2021 Oct; 7(44):eabf8744. PubMed ID: 34705513
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Record-Low Subthreshold-Swing Negative-Capacitance 2D Field-Effect Transistors.
    Wang Y; Bai X; Chu J; Wang H; Rao G; Pan X; Du X; Hu K; Wang X; Gong C; Yin C; Yang C; Yan C; Wu C; Shuai Y; Wang X; Liao M; Xiong J
    Adv Mater; 2020 Nov; 32(46):e2005353. PubMed ID: 33043512
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Metal-Contact Improvement in a Multilayer WSe
    Lee K; Kim Y; Kim D; Lee J; Lee H; Joo MK; Cho YH; Shin J; Ji H; Kim GT
    ACS Appl Mater Interfaces; 2021 Jan; 13(2):2829-2835. PubMed ID: 33410320
    [TBL] [Abstract][Full Text] [Related]  

  • 20. High-Performance p-Type Black Phosphorus Transistor with Scandium Contact.
    Li L; Engel M; Farmer DB; Han SJ; Wong HS
    ACS Nano; 2016 Apr; 10(4):4672-7. PubMed ID: 27023751
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 14.