These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

209 related articles for article (PubMed ID: 26699197)

  • 1. Effects of Ga-Te interface layer on the potential barrier height of CdTe/GaAs heterointerface.
    Xi S; Jie W; Zha G; Yuan Y; Wang T; Zhang W; Zhu J; Xu L; Xu Y; Su J; Zhang H; Gu Y; Li J; Ren J; Zhao Q
    Phys Chem Chem Phys; 2016 Jan; 18(4):2639-45. PubMed ID: 26699197
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Correction: Effects of Ga-Te interface layer on the potential barrier height of CdTe/GaAs heterointerface.
    Xi S; Jie W; Zha G; Yuan Y; Wang T; Zhang W; Zhu J; Xu L; Xu Y; Su J; Zhang H; Gu Y; Li J; Ren J; Zhao Q
    Phys Chem Chem Phys; 2016 Feb; 18(7):5658. PubMed ID: 26815537
    [TBL] [Abstract][Full Text] [Related]  

  • 3. CdTe electrodeposition on InP(100) via electrochemical atomic layer epitaxy (EC-ALE): studies using UHV-EC.
    Muthuvel M; Stickney JL
    Langmuir; 2006 Jun; 22(12):5504-8. PubMed ID: 16732684
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Structural evolution and the control of defects in atomic layer deposited HfO2-Al2O3 stacked films on GaAs.
    Kang YS; Kim DK; Jeong KS; Cho MH; Kim CY; Chung KB; Kim H; Kim DC
    ACS Appl Mater Interfaces; 2013 Mar; 5(6):1982-9. PubMed ID: 23438318
    [TBL] [Abstract][Full Text] [Related]  

  • 5. In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: electronic and electric structures.
    Pi TW; Lin YH; Fanchiang YT; Chiang TH; Wei CH; Lin YC; Wertheim GK; Kwo J; Hong M
    Nanotechnology; 2015 Apr; 26(16):164001. PubMed ID: 25824203
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Surface passivation and interface properties of bulk GaAs and epitaxial-GaAs/Ge using atomic layer deposited TiAlO alloy dielectric.
    Dalapati GK; Chia CK; Tan CC; Tan HR; Chiam SY; Dong JR; Das A; Chattopadhyay S; Mahata C; Maiti CK; Chi DZ
    ACS Appl Mater Interfaces; 2013 Feb; 5(3):949-57. PubMed ID: 23331503
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs(001)-4 × 6 and As-rich GaAs(001)-2 × 4 surfaces: a synchrotron radiation photoemission study.
    Pi TW; Lin HY; Liu YT; Lin TD; Wertheim GK; Kwo J; Hong M
    Nanoscale Res Lett; 2013 Apr; 8(1):169. PubMed ID: 23587341
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Tensile-strained nanoscale Ge/In0.16Ga0.84As heterostructure for tunnel field-effect transistor.
    Zhu Y; Maurya D; Priya S; Hudait MK
    ACS Appl Mater Interfaces; 2014 Apr; 6(7):4947-53. PubMed ID: 24635912
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn)As.
    Adell J; Ulfat I; Ilver L; Sadowski J; Karlsson K; Kanski J
    J Phys Condens Matter; 2011 Mar; 23(8):085003. PubMed ID: 21411896
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y
    Cheng CP; Chen WS; Cheng YT; Wan HW; Yang CY; Pi TW; Kwo J; Hong M
    ACS Omega; 2018 Feb; 3(2):2111-2118. PubMed ID: 31458518
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition.
    Byun YC; Choi S; An Y; McIntyre PC; Kim H
    ACS Appl Mater Interfaces; 2014 Jul; 6(13):10482-8. PubMed ID: 24911531
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Controlled high-quality interface of a Ti
    Zhou Y; Liu X; Zhu J
    J Colloid Interface Sci; 2020 Feb; 560():769-776. PubMed ID: 31706653
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction.
    Tuominen M; Yasir M; Lång J; Dahl J; Kuzmin M; Mäkelä J; Punkkinen M; Laukkanen P; Kokko K; Schulte K; Punkkinen R; Korpijärvi VM; Polojärvi V; Guina M
    Phys Chem Chem Phys; 2015 Mar; 17(10):7060-6. PubMed ID: 25686555
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Comparative study of Al(x)Ga(1-x)As/GaAs photocathodes with different aluminum concentrations by surface photovoltage spectroscopy.
    Jiao G; Hu C; Liu J; Qian Y
    Appl Opt; 2015 Oct; 54(28):8473-8. PubMed ID: 26479625
    [TBL] [Abstract][Full Text] [Related]  

  • 15. The electronic and chemical structure of the a-B3CO0.5:Hy-to-metal interface from photoemission spectroscopy: implications for Schottky barrier heights.
    Driver MS; Paquette MM; Karki S; Nordell BJ; Caruso AN
    J Phys Condens Matter; 2012 Nov; 24(44):445001. PubMed ID: 22976833
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Multilayer GaAs-Al(0.3)Ga(0.7)As dielectric quarter wave stacks grown by molecular beam epitaxy.
    van der Ziel JP; Ilegems M
    Appl Opt; 1975 Nov; 14(11):2627-30. PubMed ID: 20155076
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Synthesis and phase evolutions in layered structure of Ga2S3 semiconductor thin films on epiready GaAs (111) substrates.
    Liu HF; Ansah Antwi KK; Yakovlev NL; Tan HR; Ong LT; Chua SJ; Chi DZ
    ACS Appl Mater Interfaces; 2014 Mar; 6(5):3501-7. PubMed ID: 24397590
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Interfacial chemistry in Al/CuO reactive nanomaterial and its role in exothermic reaction.
    Kwon J; Ducéré JM; Alphonse P; Bahrami M; Petrantoni M; Veyan JF; Tenailleau C; Estève A; Rossi C; Chabal YJ
    ACS Appl Mater Interfaces; 2013 Feb; 5(3):605-13. PubMed ID: 23289538
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Modulating the Interface Chemistry and Electrical Properties of Sputtering-Driven HfYO/GaAs Gate Stacks by ALD Pulse Cycles and Thermal Treatment.
    Liang S; He G; Wang D; Hao L; Zhang M; Cui J
    ACS Omega; 2019 Jul; 4(7):11663-11672. PubMed ID: 31460273
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Electronic structure of Te/Sb/Ge and Sb/Te/Ge multi layer films using photoelectron spectroscopy.
    Baeck JH; Ann YK; Jeong KH; Cho MH; Ko DH; Oh JH; Jeong H
    J Am Chem Soc; 2009 Sep; 131(38):13634-8. PubMed ID: 19725494
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 11.