These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

404 related articles for article (PubMed ID: 26709534)

  • 1. Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns.
    Niu G; Capellini G; Lupina G; Niermann T; Salvalaglio M; Marzegalli A; Schubert MA; Zaumseil P; Krause HM; Skibitzki O; Lehmann M; Montalenti F; Xie YH; Schroeder T
    ACS Appl Mater Interfaces; 2016 Jan; 8(3):2017-26. PubMed ID: 26709534
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers.
    Niu G; Capellini G; Schubert MA; Niermann T; Zaumseil P; Katzer J; Krause HM; Skibitzki O; Lehmann M; Xie YH; von Känel H; Schroeder T
    Sci Rep; 2016 Mar; 6():22709. PubMed ID: 26940260
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition.
    Bollani M; Chrastina D; Fedorov A; Sordan R; Picco A; Bonera E
    Nanotechnology; 2010 Nov; 21(47):475302. PubMed ID: 21030775
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates.
    Grydlik M; Langer G; Fromherz T; Schäffler F; Brehm M
    Nanotechnology; 2013 Mar; 24(10):105601. PubMed ID: 23416837
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Microphotoluminescence and perfect ordering of SiGe islands on pit-patterned Si(001) substrates.
    Hackl F; Grydlik M; Brehm M; Groiss H; Schäffler F; Fromherz T; Bauer G
    Nanotechnology; 2011 Apr; 22(16):165302. PubMed ID: 21393825
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Ge island assembly on metal-patterned Si: truncated pyramids, nanorods, and beyond.
    Robinson JT; Dubon OD
    J Nanosci Nanotechnol; 2008 Jan; 8(1):56-68. PubMed ID: 18468053
    [TBL] [Abstract][Full Text] [Related]  

  • 7. DC heating induced shape transformation of Ge structures on ultraclean Si(5 5 12) surfaces.
    Dash JK; Rath A; Juluri RR; Raman PS; Müller K; Rosenauer A; Satyam PV
    J Phys Condens Matter; 2011 Apr; 23(13):135002. PubMed ID: 21403241
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) Substrates.
    Lukosius M; Dabrowski J; Kitzmann J; Fursenko O; Akhtar F; Lisker M; Lippert G; Schulze S; Yamamoto Y; Schubert MA; Krause HM; Wolff A; Mai A; Schroeder T; Lupina G
    ACS Appl Mater Interfaces; 2016 Dec; 8(49):33786-33793. PubMed ID: 27960421
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering.
    Ke SY; Yang J; Qiu F; Wang ZQ; Wang C; Yang Y
    Nanotechnology; 2015 Nov; 26(44):445602. PubMed ID: 26457572
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition.
    Zhang Z; Wang RF; Zhang J; Li HS; Zhang J; Qiu F; Yang J; Wang C; Yang Y
    Nanotechnology; 2016 Jul; 27(30):305601. PubMed ID: 27302495
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy.
    Kafi N; Kang S; Golz C; Rodrigues-Weisensee A; Persichetti L; Ryzhak D; Capellini G; Spirito D; Schmidbauer M; Kwasniewski A; Netzel C; Skibitzki O; Hatami F
    Cryst Growth Des; 2024 Apr; 24(7):2724-2733. PubMed ID: 38585374
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Growth of GeSi nanoislands on nanotip-patterned Si (100) substrates with a stress-induced self-limiting interdiffusion.
    Tang R; Huang K; Lai H; Li C; Wu Z; Kang J
    Nanoscale Res Lett; 2012 Jun; 7(1):346. PubMed ID: 22734613
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Global faceting behavior of strained Ge islands on Si.
    Robinson JT; Rastelli A; Schmidt O; Dubon OD
    Nanotechnology; 2009 Feb; 20(8):085708. PubMed ID: 19417469
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Enhanced 400-600 nm photoresponsivity of metal-oxide-semiconductor diodes with multi-stack germanium quantum dots.
    Tzeng SS; Li PW
    Nanotechnology; 2008 Jun; 19(23):235203. PubMed ID: 21825783
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Comparison of cross-sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers.
    Norris DJ; Myronov M; Leadley DR; Walther T
    J Microsc; 2017 Dec; 268(3):288-297. PubMed ID: 28972660
    [TBL] [Abstract][Full Text] [Related]  

  • 16. X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates.
    Zaumseil P; Kozlowski G; Yamamoto Y; Schubert MA; Schroeder T
    J Appl Crystallogr; 2013 Aug; 46(Pt 4):868-873. PubMed ID: 24046490
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates.
    Brehm M; Groiss H; Bauer G; Gerthsen D; Clarke R; Paltiel Y; Yacoby Y
    Nanotechnology; 2015 Dec; 26(48):485702. PubMed ID: 26553384
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers.
    Jung JH; Yoon HS; Kim YL; Song MS; Kim Y; Chen ZG; Zou J; Choi DY; Kang JH; Joyce HJ; Gao Q; Hoe Tan H; Jagadish C
    Nanotechnology; 2010 Jul; 21(29):295602. PubMed ID: 20585174
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Sculpting semiconductor heteroepitaxial islands: from dots to rods.
    Robinson JT; Walko DA; Arms DA; Tinberg DS; Evans PG; Cao Y; Liddle JA; Rastelli A; Schmidt OG; Dubon OD
    Phys Rev Lett; 2007 Mar; 98(10):106102. PubMed ID: 17358549
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Evolution of Ge nanoislands on Si(110)-'16 x 2' surface under thermal annealing studied using STM.
    Gangopadhyay S; Yoshimura M; Ueda K
    Nanotechnology; 2009 Nov; 20(47):475401. PubMed ID: 19875880
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 21.