These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
97 related articles for article (PubMed ID: 26726378)
1. Effects of La Incorporation in Hf Based Dielectric on Leakage Conduction and Carrier Scattering Mechanisms. You SW; Lee DH; Nguyen MC; Jeon YS; Tong DT; Bang HJ; Jeong JK; Choi R J Nanosci Nanotechnol; 2015 Oct; 15(10):7590-2. PubMed ID: 26726378 [TBL] [Abstract][Full Text] [Related]
2. Poole-Frenkel (PF)-MOS: A Proposal for the Ultimate Scale of an MOS Transistor. Wong H; Kakushima K Nanomaterials (Basel); 2023 Jan; 13(3):. PubMed ID: 36770374 [TBL] [Abstract][Full Text] [Related]
3. Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis. Das S; Zheng Y; Ahyi A; Kuroda MA; Dhar S Materials (Basel); 2022 Sep; 15(19):. PubMed ID: 36234077 [TBL] [Abstract][Full Text] [Related]
4. Mobility degradation mechanisms of MOSFETs with a high-k dielectric layer. Jung HS; Ryu JT; Kim DH; Kim TW J Nanosci Nanotechnol; 2014 Nov; 14(11):8215-8. PubMed ID: 25958503 [TBL] [Abstract][Full Text] [Related]
5. Electronic structure characterization of La incorporated Hf-based high-k gate dielectrics by NEXAFS. Yamamoto T; Ogawa S; Kunisu M; Tsuji J; Kita K; Saeki M; Oku Y; Arimura H; Kitano N; Hosoi T; Shimura T; Watanabe H J Nanosci Nanotechnol; 2011 Apr; 11(4):2823-8. PubMed ID: 21776638 [TBL] [Abstract][Full Text] [Related]
6. Tunable Mobility in Double-Gated MoTe Ji H; Joo MK; Yi H; Choi H; Gul HZ; Ghimire MK; Lim SC ACS Appl Mater Interfaces; 2017 Aug; 9(34):29185-29192. PubMed ID: 28786660 [TBL] [Abstract][Full Text] [Related]
7. Temperature-Dependent Transport in Ultrathin Black Phosphorus Field-Effect Transistors. Yan X; Wang H; Sanchez Esqueda I Nano Lett; 2019 Jan; 19(1):482-487. PubMed ID: 30518214 [TBL] [Abstract][Full Text] [Related]
8. Interaction of oxygen vacancies and lanthanum in Hf-based high-k dielectrics: an ab initio investigation. Nadimi E; Ottking R; Plänitz P; Trentzsch M; Kelwing T; Carter R; Schreiber M; Radehaus C J Phys Condens Matter; 2011 Sep; 23(36):365502. PubMed ID: 21865638 [TBL] [Abstract][Full Text] [Related]
9. Suppression of Interfacial Current Fluctuation in MoTe2 Transistors with Different Dielectrics. Ji H; Joo MK; Yun Y; Park JH; Lee G; Moon BH; Yi H; Suh D; Lim SC ACS Appl Mater Interfaces; 2016 Jul; 8(29):19092-9. PubMed ID: 27362461 [TBL] [Abstract][Full Text] [Related]
10. Effect of Native Defects on Transport Properties in Non-Stoichiometric CoSb₃. Realyvázquez-Guevara PR; Rivera-Gómez FJ; Faudoa-Arzate A; Botello-Zubiate ME; Sáenz-Hernández RJ; Santillán-Rodríguez CR; Matutes-Aquino JA Materials (Basel); 2017 Mar; 10(3):. PubMed ID: 28772648 [TBL] [Abstract][Full Text] [Related]
11. Effect of Dielectric Interface on the Performance of MoS Li X; Xiong X; Li T; Li S; Zhang Z; Wu Y ACS Appl Mater Interfaces; 2017 Dec; 9(51):44602-44608. PubMed ID: 29199423 [TBL] [Abstract][Full Text] [Related]
12. Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors. Je SY; Son BG; Kim HG; Park MY; Do LM; Choi R; Jeong JK ACS Appl Mater Interfaces; 2014 Nov; 6(21):18693-703. PubMed ID: 25285585 [TBL] [Abstract][Full Text] [Related]
14. Charge conduction and breakdown mechanisms in self-assembled nanodielectrics. DiBenedetto SA; Facchetti A; Ratner MA; Marks TJ J Am Chem Soc; 2009 May; 131(20):7158-68. PubMed ID: 19408943 [TBL] [Abstract][Full Text] [Related]
15. Designing hybrid gate dielectric for fully printing high-performance carbon nanotube thin film transistors. Li Q; Li S; Yang D; Su W; Wang Y; Zhou W; Liu H; Xie S Nanotechnology; 2017 Oct; 28(43):435203. PubMed ID: 28832342 [TBL] [Abstract][Full Text] [Related]
16. Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric. Ling ZP; Zhu JT; Liu X; Ang KW Sci Rep; 2016 May; 6():26609. PubMed ID: 27222074 [TBL] [Abstract][Full Text] [Related]
17. Novel palladium germanide schottky contact for high performance schottky barrier ge MOSFETs and characterization of its leakage current mechanism. Oh SK; Shin HS; Kang MH; Lee GW; Lee HD J Nanosci Nanotechnol; 2012 Jul; 12(7):5347-50. PubMed ID: 22966569 [TBL] [Abstract][Full Text] [Related]
18. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer. Qian Q; Li B; Hua M; Zhang Z; Lan F; Xu Y; Yan R; Chen KJ Sci Rep; 2016 Jun; 6():27676. PubMed ID: 27279454 [TBL] [Abstract][Full Text] [Related]