These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

194 related articles for article (PubMed ID: 26726405)

  • 1. Effects of Double Active Layer and Acetic Acid Stabilizer on the Electrical Properties of a Solution-Processed Zinc Tin Oxide Thin-Film Transistor.
    Shin JH; Kim SJ; Ha SS; Im YJ; Park CH; Yi M
    J Nanosci Nanotechnol; 2015 Oct; 15(10):7743-7. PubMed ID: 26726405
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Optimization of the Solution-Based Indium-Zinc Oxide/Zinc-Tin Oxide Channel Layer for Thin-Film Transistors.
    Lim K; Choi P; Kim S; Kim H; Kim M; Lee J; Hyeon Y; Koo K; Choi B
    J Nanosci Nanotechnol; 2018 Sep; 18(9):5913-5918. PubMed ID: 29677716
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Impact of the cation composition on the electrical performance of solution-processed zinc tin oxide thin-film transistors.
    Kim YJ; Oh S; Yang BS; Han SJ; Lee HW; Kim HJ; Jeong JK; Hwang CS; Kim HJ
    ACS Appl Mater Interfaces; 2014 Aug; 6(16):14026-36. PubMed ID: 25090286
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Graded-Band-Gap Zinc-Tin Oxide Thin-Film Transistors with a Vertically Stacked Structure for Wavelength-Selective Photodetection.
    Teng J; Chen Y; Huang C; Yang M; Zhu B; Liu WJ; Ding SJ; Wu X
    ACS Appl Mater Interfaces; 2024 Feb; 16(7):9060-9067. PubMed ID: 38336611
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Electrical properties of magnesium incorporated zinc tin oxide thin film transistors by solution process.
    Jeon IY; Lee JY; Yoon DH
    J Nanosci Nanotechnol; 2013 Mar; 13(3):1741-5. PubMed ID: 23755583
    [TBL] [Abstract][Full Text] [Related]  

  • 6. A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance.
    Kim H; Kwack YJ; Yun EJ; Choi WS
    Sci Rep; 2016 Sep; 6():33576. PubMed ID: 27641430
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Dual-Functional Superoxide Precursor To Improve the Electrical Characteristics of Oxide Thin Film Transistors.
    Jung TS; Lee H; Kim HJ; Lee JH; Kim HJ
    ACS Appl Mater Interfaces; 2018 Dec; 10(51):44554-44560. PubMed ID: 30511830
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Dual electrical behavior of multivalent metal cation-based oxide and its application to thin-film transistors with high mobility and excellent photobias stability.
    Yun MG; Ahn CH; Cho SW; Kim SH; Kim YK; Cho HK
    ACS Appl Mater Interfaces; 2015 Mar; 7(11):6118-24. PubMed ID: 25714371
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Photobias instability of high performance solution processed amorphous zinc tin oxide transistors.
    Kim YJ; Yang BS; Oh S; Han SJ; Lee HW; Heo J; Jeong JK; Kim HJ
    ACS Appl Mater Interfaces; 2013 Apr; 5(8):3255-61. PubMed ID: 23540523
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Electrohydrodynamic jet-printed zinc-tin oxide TFTs and their bias stability.
    Lee YG; Choi WS
    ACS Appl Mater Interfaces; 2014 Jul; 6(14):11167-72. PubMed ID: 25000343
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Effects of Ga:N addition on the electrical performance of zinc tin oxide thin film transistor by solution-processing.
    Ahn BD; Jeon HJ; Park JS
    ACS Appl Mater Interfaces; 2014 Jun; 6(12):9228-35. PubMed ID: 24892383
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Toward an Understanding of Thin-Film Transistor Performance in Solution-Processed Amorphous Zinc Tin Oxide (ZTO) Thin Films.
    Sanctis S; Koslowski N; Hoffmann R; Guhl C; Erdem E; Weber S; Schneider JJ
    ACS Appl Mater Interfaces; 2017 Jun; 9(25):21328-21337. PubMed ID: 28573850
    [TBL] [Abstract][Full Text] [Related]  

  • 13. High-performance transistors based on zinc tin oxides by single spin-coating process.
    Zhao Y; Duan L; Dong G; Zhang D; Qiao J; Wang L; Qiu Y
    Langmuir; 2013 Jan; 29(1):151-7. PubMed ID: 23210920
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors.
    Wang C; Guo L; Lei M; Wang C; Chu X; Yang F; Gao X; Wamg H; Chi Y; Yang X
    Nanomaterials (Basel); 2022 Jul; 12(14):. PubMed ID: 35889620
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Improvement of solution-processed Zn-Sn-O active-layer thin film transistors by novel high valence Mo doping.
    Peng C; Dong P; Li X
    Nanotechnology; 2021 Jan; 32(2):025207. PubMed ID: 32987367
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Investigation on the temperature dependence of the performance of solution processed Si-Zn-Sn oxide thin film transistor.
    Choi JY; Kim SS; Lee SY
    J Nanosci Nanotechnol; 2013 Oct; 13(10):7089-91. PubMed ID: 24245198
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Synergistic effects of water addition and step heating on the formation of solution-processed zinc tin oxide thin films: towards high-mobility polycrystalline transistors.
    Huang G; Duan L; Zhao Y; Zhang Y; Dong G; Zhang D; Qiu Y
    Nanotechnology; 2016 Nov; 27(46):465204. PubMed ID: 27758975
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Enhanced bias stability of solution-processed zinc-tin-oxide thin film transistors using self-assembled monolayer as a selective channel passivation.
    Heo JS; Park SK
    J Nanosci Nanotechnol; 2013 Oct; 13(10):7056-8. PubMed ID: 24245189
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-doping.
    Jeong SK; Kim MH; Lee SY; Seo H; Choi DK
    Nanoscale Res Lett; 2014; 9(1):619. PubMed ID: 25435832
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate.
    Han D; Zhang Y; Cong Y; Yu W; Zhang X; Wang Y
    Sci Rep; 2016 Dec; 6():38984. PubMed ID: 27941915
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.