These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

129 related articles for article (PubMed ID: 26726416)

  • 1. Improved Photo-Induced Stability in Amorphous Metal-Oxide Based TFTs for Transparent Displays.
    Koo SM; Ha TJ
    J Nanosci Nanotechnol; 2015 Oct; 15(10):7800-3. PubMed ID: 26726416
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors.
    Na JH; Park JH; Park W; Feng J; Eun JS; Lee J; Lee SH; Jang J; Kang IM; Kim DK; Bae JH
    Nanomaterials (Basel); 2024 Mar; 14(5):. PubMed ID: 38470795
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Trap-Assisted Enhanced Bias Illumination Stability of Oxide Thin Film Transistor by Praseodymium Doping.
    Xu H; Xu M; Li M; Chen Z; Zou J; Wu W; Qiao X; Tao H; Wang L; Ning H; Ma D; Peng J
    ACS Appl Mater Interfaces; 2019 Feb; 11(5):5232-5239. PubMed ID: 30640426
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.
    Shin KY; Tak YJ; Kim WG; Hong S; Kim HJ
    ACS Appl Mater Interfaces; 2017 Apr; 9(15):13278-13285. PubMed ID: 28299924
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Photobias instability of high performance solution processed amorphous zinc tin oxide transistors.
    Kim YJ; Yang BS; Oh S; Han SJ; Lee HW; Heo J; Jeong JK; Kim HJ
    ACS Appl Mater Interfaces; 2013 Apr; 5(8):3255-61. PubMed ID: 23540523
    [TBL] [Abstract][Full Text] [Related]  

  • 6. A Comparison of Photo-Induced Hysteresis Between Hydrogenated Amorphous Silicon and Amorphous IGZO Thin-Film Transistors.
    Ha TJ; Cho WJ; Chung HB; Koo SM
    J Nanosci Nanotechnol; 2015 Sep; 15(9):6695-8. PubMed ID: 26716230
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Lowering the Trap-State Density of Transparent Amorphous Oxide Semiconductor-Based Thin Film Transistors Through Microwave Irradiation.
    Cho MH; Cho WJ
    J Nanosci Nanotechnol; 2020 Nov; 20(11):6920-6924. PubMed ID: 32604537
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors.
    Avis C; Kim Y; Jang J
    Materials (Basel); 2019 Oct; 12(20):. PubMed ID: 31614961
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Low-temperature fabrication of an HfO
    Hong S; Park SP; Kim YG; Kang BH; Na JW; Kim HJ
    Sci Rep; 2017 Nov; 7(1):16265. PubMed ID: 29176568
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Improving Charge Trapping/Detrapping Characteristics of Amorphous In-Ga-ZnO Thin-Film-Transistors Using Microwave Irradiation.
    Lee HW; Choi HS; Cho WJ
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6164-6169. PubMed ID: 31026929
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Effect of Ta addition of co-sputtered amorphous tantalum indium zinc oxide thin film transistors with bias stability.
    Son DH; Kim DH; Park SN; Sung SJ; Kang JK
    J Nanosci Nanotechnol; 2014 Nov; 14(11):8163-6. PubMed ID: 25958492
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Indium Tungsten Oxide Thin Films for Flexible High-Performance Transistors and Neuromorphic Electronics.
    Tiwari N; Rajput M; John RA; Kulkarni MR; Nguyen AC; Mathews N
    ACS Appl Mater Interfaces; 2018 Sep; 10(36):30506-30513. PubMed ID: 30129368
    [TBL] [Abstract][Full Text] [Related]  

  • 13. The self-activated radical doping effects on the catalyzed surface of amorphous metal oxide films.
    Kim HJ; Tak YJ; Park SP; Na JW; Kim YG; Hong S; Kim PH; Kim GT; Kim BK; Kim HJ
    Sci Rep; 2017 Sep; 7(1):12469. PubMed ID: 28963493
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors.
    Wang D; Furuta M
    Beilstein J Nanotechnol; 2019; 10():1125-1130. PubMed ID: 33614381
    [TBL] [Abstract][Full Text] [Related]  

  • 15. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C.
    Kim WG; Tak YJ; Du Ahn B; Jung TS; Chung KB; Kim HJ
    Sci Rep; 2016 Mar; 6():23039. PubMed ID: 26972476
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Analysis of Threshold Voltage Shift for Full V
    Kim JH; Jang JT; Bae JH; Choi SJ; Kim DM; Kim C; Kim Y; Kim DH
    Micromachines (Basel); 2021 Mar; 12(3):. PubMed ID: 33808738
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Low-voltage operation of ZrO2-gated n-type thin-film transistors based on a channel formed by hybrid phases of SnO and SnO2.
    Chu HC; Shen YS; Hsieh CH; Huang JH; Wu YH
    ACS Appl Mater Interfaces; 2015 Jul; 7(28):15129-37. PubMed ID: 26148216
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Fabrication and Characteristics of High Mobility InSnZnO Thin Film Transistors.
    Choi P; Lee J; Park H; Baek D; Lee J; Yi J; Kim S; Choi B
    J Nanosci Nanotechnol; 2016 May; 16(5):4788-91. PubMed ID: 27483823
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Improvement in negative bias stress stability of solution-processed amorphous In-Ga-Zn-O thin-film transistors using hydrogen peroxide.
    Kwon JM; Jung J; Rim YS; Kim DL; Kim HJ
    ACS Appl Mater Interfaces; 2014 Mar; 6(5):3371-7. PubMed ID: 24503476
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Suppression of Interfacial Disorders in Solution-Processed Metal Oxide Thin-Film Transistors by Mg Doping.
    Heo JS; Jeon SP; Kim I; Lee W; Kim YH; Park SK
    ACS Appl Mater Interfaces; 2019 Dec; 11(51):48054-48061. PubMed ID: 31791119
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.