These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

127 related articles for article (PubMed ID: 26726561)

  • 1. Resistive Switching Characteristics of Tantalum Oxide Thin Film and Titanium Oxide Nanoparticles Hybrid Structure.
    Park MR; Abbas Y; Hu Q; Yoon TS; Choi YJ; Kang CJ
    J Nanosci Nanotechnol; 2015 Nov; 15(11):8613-6. PubMed ID: 26726561
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Investigation of Switching Phenomenon in Metal-Tantalum Oxide Interface.
    Yawar A; Park MR; Hu Q; Song WJ; Yoon TS; Choi YJ; Kang CJ
    J Nanosci Nanotechnol; 2015 Oct; 15(10):7564-8. PubMed ID: 26726372
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Resistive switching characteristics of manganese oxide nanoparticle assembly with crossbar arrays.
    Hu Q; Shim JH; Abbas Y; Song W; Yoon TS; Choi YJ; Kang CJ
    J Nanosci Nanotechnol; 2014 Nov; 14(11):8182-6. PubMed ID: 25958496
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Impact of oxygen exchange reaction at the ohmic interface in Ta
    Kim W; Menzel S; Wouters DJ; Guo Y; Robertson J; Roesgen B; Waser R; Rana V
    Nanoscale; 2016 Oct; 8(41):17774-17781. PubMed ID: 27523172
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Bipolar Resistive Switching Characteristics of HfO
    Zhang W; Kong JZ; Cao ZY; Li AD; Wang LG; Zhu L; Li X; Cao YQ; Wu D
    Nanoscale Res Lett; 2017 Dec; 12(1):393. PubMed ID: 28599512
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Exploring Nanoscale Electrical Properties of CuO-Graphene Based Hybrid Interfaced Memory Device by Conductive Atomic Force Microscopy.
    Singh B; Mehta BR; Varandani D; Savu AV; Brugger J
    J Nanosci Nanotechnol; 2016 Apr; 16(4):4044-51. PubMed ID: 27451764
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Temperature dependence of resistive switching behaviors in resistive random access memory based on graphene oxide film.
    Yi M; Cao Y; Ling H; Du Z; Wang L; Yang T; Fan Q; Xie L; Huang W
    Nanotechnology; 2014 May; 25(18):185202. PubMed ID: 24739543
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Resistive switching characteristics of ZnO nanowires.
    Yoo EJ; Shin IK; Yoon TS; Choi YJ; Kang CJ
    J Nanosci Nanotechnol; 2014 Dec; 14(12):9459-64. PubMed ID: 25971083
    [TBL] [Abstract][Full Text] [Related]  

  • 9. In situ control of oxygen vacancies in TiO₂ by atomic layer deposition for resistive switching devices.
    Park SJ; Lee JP; Jang JS; Rhu H; Yu H; You BY; Kim CS; Kim KJ; Cho YJ; Baik S; Lee W
    Nanotechnology; 2013 Jul; 24(29):295202. PubMed ID: 23799660
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Memory effect by carrier trapping into V3Si nanocrystals among SiO2 layers on multi-layered graphene layer.
    Lee DU; Kim D; Lee KS; Kim EK
    J Nanosci Nanotechnol; 2014 Nov; 14(11):8654-8. PubMed ID: 25958579
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Observation of nonvolatile resistive memory switching characteristics in Ag/graphene-oxide/Ag devices.
    Venugopal G; Kim SJ
    J Nanosci Nanotechnol; 2012 Nov; 12(11):8522-5. PubMed ID: 23421239
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5-Ta system.
    Gao S; Zeng F; Wang M; Wang G; Song C; Pan F
    Phys Chem Chem Phys; 2015 May; 17(19):12849-56. PubMed ID: 25907552
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Unipolar resistive switching of ZnO-single-wire memristors.
    Huang Y; Luo Y; Shen Z; Yuan G; Zeng H
    Nanoscale Res Lett; 2014; 9(1):381. PubMed ID: 25147487
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Reliable and Low-Power Multilevel Resistive Switching in TiO
    Xiao M; Musselman KP; Duley WW; Zhou YN
    ACS Appl Mater Interfaces; 2017 Feb; 9(5):4808-4817. PubMed ID: 28098978
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode.
    Chen KH; Chang KC; Chang TC; Tsai TM; Liang SP; Young TF; Syu YE; Sze SM
    Nanoscale Res Lett; 2016 Dec; 11(1):224. PubMed ID: 27117634
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Resistive switching characteristics of Cu/ZnO0.4S0.6/Al devices constructed on plastic substrates.
    Han Y; Cho K; Kim S
    J Nanosci Nanotechnol; 2012 Jul; 12(7):5732-4. PubMed ID: 22966644
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPt
    Wang LG; Cao ZY; Qian X; Zhu L; Cui DP; Li AD; Wu D
    ACS Appl Mater Interfaces; 2017 Feb; 9(7):6634-6643. PubMed ID: 28139921
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Understanding the Reversible Transition of Unipolar and Bipolar Resistive Switching Characteristics in Solution-Derived Nanocrystalline Au-Co
    Yao C; Li J; Zhang H; Tian T
    ACS Omega; 2024 Aug; 9(31):33941-33948. PubMed ID: 39130581
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Influences of electrode materials on the resistive memory switching properties of ZnOxS1-x:Mn thin films.
    Han Y; Chung I; Park S; Cho K; Kim S
    J Nanosci Nanotechnol; 2013 Sep; 13(9):6208-11. PubMed ID: 24205630
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Composition-ratio influence on resistive switching behavior of solution-processed InGaZnO-based thin-film.
    Hwang YH; Hwang I; Cho WJ
    J Nanosci Nanotechnol; 2014 Nov; 14(11):8196-200. PubMed ID: 25958499
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.