These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

101 related articles for article (PubMed ID: 26726661)

  • 1. Performance Investigation of Nanoscale Strained Ge pMOSFETs with a GeSn Alloy Stressor.
    Lee CC; Chang ST; Cheng SW; Chian BT
    J Nanosci Nanotechnol; 2015 Nov; 15(11):9158-62. PubMed ID: 26726661
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Strain engineering of nanoscale Si P-type metal-oxide-semiconductor field-effect transistor devices with SiGe alloy integrated with contact-etch-stop layer stressors.
    Lee CC
    J Nanosci Nanotechnol; 2012 Jul; 12(7):5402-6. PubMed ID: 22966579
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Theoretical investigation of tensile strained GeSn waveguide with Si₃N₄ liner stressor for mid-infrared detector and modulator applications.
    Zhang Q; Liu Y; Yan J; Zhang C; Hao Y; Han G
    Opt Express; 2015 Mar; 23(6):7924-32. PubMed ID: 25837129
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Impact of strain engineering on nanoscale strained III-V PMOSFETs.
    Chang ST; Liu YC; Ou-Yang H
    J Nanosci Nanotechnol; 2012 Jul; 12(7):5469-73. PubMed ID: 22966592
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Simulation investigation of tensile strained GeSn fin photodetector with Si(3)N(4) liner stressor for extension of absorption wavelength.
    Zhang Q; Liu Y; Yan J; Zhang C; Hao Y; Han G
    Opt Express; 2015 Jan; 23(2):739-46. PubMed ID: 25835833
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Theoretical study of the bandgap regulation of a two-dimensional GeSn alloy under biaxial strain and uniaxial strain along the armchair direction.
    Huang W; Yang H; Cheng B; Xue C
    Phys Chem Chem Phys; 2018 Sep; 20(36):23344-23351. PubMed ID: 30175833
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires.
    Assali S; Bergamaschini R; Scalise E; Verheijen MA; Albani M; Dijkstra A; Li A; Koelling S; Bakkers EPAM; Montalenti F; Miglio L
    ACS Nano; 2020 Feb; 14(2):2445-2455. PubMed ID: 31972083
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress.
    Liu Y; Niu J; Wang H; Han G; Zhang C; Feng Q; Zhang J; Hao Y
    Nanoscale Res Lett; 2017 Dec; 12(1):120. PubMed ID: 28228005
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Size and shape effect of SiC source/drain on strained Si.
    Byeon DS; Kim SW; Ko DH
    J Nanosci Nanotechnol; 2014 Oct; 14(10):7679-82. PubMed ID: 25942847
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Infrared tubular microcavity based on rolled-up GeSn/Ge nanomembranes.
    Wu X; Tian Z; Cong H; Wang Y; Edy R; Huang G; Di Z; Xue C; Mei Y
    Nanotechnology; 2018 Oct; 29(42):42LT02. PubMed ID: 30052202
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector.
    Yang Y; Wang X; Wang C; Song Y; Zhang M; Xue Z; Wang S; Zhu Z; Liu G; Li P; Dong L; Mei Y; Chu PK; Hu W; Wang J; Di Z
    Nano Lett; 2020 May; 20(5):3872-3879. PubMed ID: 32293186
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Stress impact of a tensile contact etch stop layer on nanoscale strained NMOSFETs embedded with a silicon-carbon alloy stressor.
    Lee CC; Chang ST
    J Nanosci Nanotechnol; 2012 Jul; 12(7):5342-6. PubMed ID: 22966568
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform.
    Mączko HS; Kudrawiec R; Gladysiewicz M
    Sci Rep; 2016 Sep; 6():34082. PubMed ID: 27686056
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Investigating the mechanical properties of GeSn nanowires.
    Kosmaca J; Meija R; Antsov M; Kunakova G; Sondors R; Iatsunskyi I; Coy E; Doherty J; Biswas S; Holmes JD; Erts D
    Nanoscale; 2019 Jul; 11(28):13612-13619. PubMed ID: 31290891
    [TBL] [Abstract][Full Text] [Related]  

  • 15. High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors.
    Wirths S; Stange D; Pampillón MA; Tiedemann AT; Mussler G; Fox A; Breuer U; Baert B; San Andrés E; Nguyen ND; Hartmann JM; Ikonic Z; Mantl S; Buca D
    ACS Appl Mater Interfaces; 2015 Jan; 7(1):62-7. PubMed ID: 25531887
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth.
    Dou W; Benamara M; Mosleh A; Margetis J; Grant P; Zhou Y; Al-Kabi S; Du W; Tolle J; Li B; Mortazavi M; Yu SQ
    Sci Rep; 2018 Apr; 8(1):5640. PubMed ID: 29618825
    [TBL] [Abstract][Full Text] [Related]  

  • 17. N-MOSFETs Formed on Solid Phase Epitaxially Grown GeSn Film with Passivation by Oxygen Plasma Featuring High Mobility.
    Fang YC; Chen KY; Hsieh CH; Su CC; Wu YH
    ACS Appl Mater Interfaces; 2015 Dec; 7(48):26374-80. PubMed ID: 26579560
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Density and Capture Cross-Section of Interface Traps in GeSnO2 and GeO2 Grown on Heteroepitaxial GeSn.
    Gupta S; Simoen E; Loo R; Madia O; Lin D; Merckling C; Shimura Y; Conard T; Lauwaert J; Vrielinck H; Heyns M
    ACS Appl Mater Interfaces; 2016 Jun; 8(21):13181-6. PubMed ID: 27172051
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Bending and precipitate formation mechanisms in epitaxial Ge-core/GeSn-shell nanowires.
    Meng AC; Wang Y; Braun MR; Lentz JZ; Peng S; Cheng H; Marshall AF; Cai W; McIntyre PC
    Nanoscale; 2021 Oct; 13(41):17547-17555. PubMed ID: 34652350
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys.
    Schulte-Braucks C; von den Driesch N; Glass S; Tiedemann AT; Breuer U; Besmehn A; Hartmann JM; Ikonic Z; Zhao QT; Mantl S; Buca D
    ACS Appl Mater Interfaces; 2016 May; 8(20):13133-9. PubMed ID: 27149260
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.