These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
189 related articles for article (PubMed ID: 26743173)
1. Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2. Campbell PM; Tarasov A; Joiner CA; Tsai MY; Pavlidis G; Graham S; Ready WJ; Vogel EM Nanoscale; 2016 Jan; 8(4):2268-76. PubMed ID: 26743173 [TBL] [Abstract][Full Text] [Related]
2. Selection Role of Metal Oxides into Transition Metal Dichalcogenide Monolayers by a Direct Selenization Process. Lin WS; Medina H; Su TY; Lee SH; Chen CW; Chen YZ; Manikandan A; Shih YC; Yang JH; Chen JH; Wu BW; Chu KW; Chuang FC; Shieh JM; Shen CH; Chueh YL ACS Appl Mater Interfaces; 2018 Mar; 10(11):9645-9652. PubMed ID: 29309121 [TBL] [Abstract][Full Text] [Related]
3. High-Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions. Liu B; Ma Y; Zhang A; Chen L; Abbas AN; Liu Y; Shen C; Wan H; Zhou C ACS Nano; 2016 May; 10(5):5153-60. PubMed ID: 27159780 [TBL] [Abstract][Full Text] [Related]
4. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Kang K; Xie S; Huang L; Han Y; Huang PY; Mak KF; Kim CJ; Muller D; Park J Nature; 2015 Apr; 520(7549):656-60. PubMed ID: 25925478 [TBL] [Abstract][Full Text] [Related]
5. Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor. Lee Y; Lee J; Bark H; Oh IK; Ryu GH; Lee Z; Kim H; Cho JH; Ahn JH; Lee C Nanoscale; 2014 Mar; 6(5):2821-6. PubMed ID: 24469273 [TBL] [Abstract][Full Text] [Related]
6. Screw-dislocation-driven growth of two-dimensional few-layer and pyramid-like WSe₂ by sulfur-assisted chemical vapor deposition. Chen L; Liu B; Abbas AN; Ma Y; Fang X; Liu Y; Zhou C ACS Nano; 2014 Nov; 8(11):11543-51. PubMed ID: 25350314 [TBL] [Abstract][Full Text] [Related]
7. Wafer-scale production of highly uniform two-dimensional MoS Kim T; Mun J; Park H; Joung D; Diware M; Won C; Park J; Jeong SH; Kang SW Nanotechnology; 2017 May; 28(18):18LT01. PubMed ID: 28346218 [TBL] [Abstract][Full Text] [Related]
8. Growth of large-scale and thickness-modulated MoS₂ nanosheets. Choudhary N; Park J; Hwang JY; Choi W ACS Appl Mater Interfaces; 2014 Dec; 6(23):21215-22. PubMed ID: 25382854 [TBL] [Abstract][Full Text] [Related]
9. Highly scalable, atomically thin WSe2 grown via metal-organic chemical vapor deposition. Eichfeld SM; Hossain L; Lin YC; Piasecki AF; Kupp B; Birdwell AG; Burke RA; Lu N; Peng X; Li J; Azcatl A; McDonnell S; Wallace RM; Kim MJ; Mayer TS; Redwing JM; Robinson JA ACS Nano; 2015 Feb; 9(2):2080-7. PubMed ID: 25625184 [TBL] [Abstract][Full Text] [Related]
10. Preparation and applications of mechanically exfoliated single-layer and multilayer MoS₂ and WSe₂ nanosheets. Li H; Wu J; Yin Z; Zhang H Acc Chem Res; 2014 Apr; 47(4):1067-75. PubMed ID: 24697842 [TBL] [Abstract][Full Text] [Related]
11. Step-Edge-Guided Nucleation and Growth of Aligned WSe2 on Sapphire via a Layer-over-Layer Growth Mode. Chen L; Liu B; Ge M; Ma Y; Abbas AN; Zhou C ACS Nano; 2015 Aug; 9(8):8368-75. PubMed ID: 26221865 [TBL] [Abstract][Full Text] [Related]
12. Wafer-scale synthesis of thickness-controllable MoS2 films via solution-processing using a dimethylformamide/n-butylamine/2-aminoethanol solvent system. Yang J; Gu Y; Lee E; Lee H; Park SH; Cho MH; Kim YH; Kim YH; Kim H Nanoscale; 2015 May; 7(20):9311-9. PubMed ID: 25946575 [TBL] [Abstract][Full Text] [Related]
13. Scalable Epitaxial Growth of WSe Wu PC; Yang CL; Du Y; Lai CH Sci Rep; 2019 May; 9(1):8017. PubMed ID: 31142782 [TBL] [Abstract][Full Text] [Related]
14. Electronic and Optoelectronic Monolayer WSe Wang Z; Nie Y; Ou H; Chen D; Cen Y; Liu J; Wu D; Hong G; Li B; Xing G; Zhang W Nanomaterials (Basel); 2023 Apr; 13(8):. PubMed ID: 37110953 [TBL] [Abstract][Full Text] [Related]
15. Top-Down Integration of Molybdenum Disulfide Transistors with Wafer-Scale Uniformity and Layer Controllability. Shi ML; Chen L; Zhang TB; Xu J; Zhu H; Sun QQ; Zhang DW Small; 2017 Sep; 13(35):. PubMed ID: 28639331 [TBL] [Abstract][Full Text] [Related]
16. Defect-Controlled Nucleation and Orientation of WSe Zhang X; Zhang F; Wang Y; Schulman DS; Zhang T; Bansal A; Alem N; Das S; Crespi VH; Terrones M; Redwing JM ACS Nano; 2019 Mar; 13(3):3341-3352. PubMed ID: 30758945 [TBL] [Abstract][Full Text] [Related]
17. Reversible Semiconducting-to-Metallic Phase Transition in Chemical Vapor Deposition Grown Monolayer WSe2 and Applications for Devices. Ma Y; Liu B; Zhang A; Chen L; Fathi M; Shen C; Abbas AN; Ge M; Mecklenburg M; Zhou C ACS Nano; 2015 Jul; 9(7):7383-91. PubMed ID: 26125321 [TBL] [Abstract][Full Text] [Related]
18. Ultrafast and low temperature synthesis of highly crystalline and patternable few-layers tungsten diselenide by laser irradiation assisted selenization process. Chen YZ; Medina H; Su TY; Li JG; Cheng KY; Chiu PW; Chueh YL ACS Nano; 2015 Apr; 9(4):4346-53. PubMed ID: 25768931 [TBL] [Abstract][Full Text] [Related]
19. Thickness-dependent carrier transport of PdSe Zhang R; Zhang Q; Jia X; Wen S; Wu H; Gong Y; Yin Y; Lan C; Li C Nanotechnology; 2023 Jun; 34(34):. PubMed ID: 37224795 [TBL] [Abstract][Full Text] [Related]
20. Ultrafast Self-Limited Growth of Strictly Monolayer WSe Liu J; Zeng M; Wang L; Chen Y; Xing Z; Zhang T; Liu Z; Zuo J; Nan F; Mendes RG; Chen S; Ren F; Wang Q; Rümmeli MH; Fu L Small; 2016 Nov; 12(41):5741-5749. PubMed ID: 27562027 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]