These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

161 related articles for article (PubMed ID: 26756792)

  • 1. Nanoscale Plasmon-Enhanced Spectroscopy in Memristive Switches.
    Di Martino G; Tappertzhofen S; Hofmann S; Baumberg J
    Small; 2016 Mar; 12(10):1334-41. PubMed ID: 26756792
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Generic relevance of counter charges for cation-based nanoscale resistive switching memories.
    Tappertzhofen S; Valov I; Tsuruoka T; Hasegawa T; Waser R; Aono M
    ACS Nano; 2013 Jul; 7(7):6396-402. PubMed ID: 23786236
    [TBL] [Abstract][Full Text] [Related]  

  • 3. High performance bipolar resistive switching memory devices based on Zn2SnO4 nanowires.
    Dong H; Zhang X; Zhao D; Niu Z; Zeng Q; Li J; Cai L; Wang Y; Zhou W; Gao M; Xie S
    Nanoscale; 2012 Apr; 4(8):2571-4. PubMed ID: 22419367
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Nanoscale cation motion in TaO(x), HfO(x) and TiO(x) memristive systems.
    Wedig A; Luebben M; Cho DY; Moors M; Skaja K; Rana V; Hasegawa T; Adepalli KK; Yildiz B; Waser R; Valov I
    Nat Nanotechnol; 2016 Jan; 11(1):67-74. PubMed ID: 26414197
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Uncovering Two Competing Switching Mechanisms for Epitaxial and Ultrathin Strontium Titanate-Based Resistive Switching Bits.
    Kubicek M; Schmitt R; Messerschmitt F; Rupp JL
    ACS Nano; 2015 Nov; 9(11):10737-48. PubMed ID: 26448096
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Nanoscale resistive switching devices: mechanisms and modeling.
    Yang Y; Lu W
    Nanoscale; 2013 Nov; 5(21):10076-92. PubMed ID: 24057010
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Forming and switching mechanisms of a cation-migration-based oxide resistive memory.
    Tsuruoka T; Terabe K; Hasegawa T; Aono M
    Nanotechnology; 2010 Oct; 21(42):425205. PubMed ID: 20864781
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Reliable Memristive Switching Memory Devices Enabled by Densely Packed Silver Nanocone Arrays as Electric-Field Concentrators.
    You BK; Kim JM; Joe DJ; Yang K; Shin Y; Jung YS; Lee KJ
    ACS Nano; 2016 Oct; 10(10):9478-9488. PubMed ID: 27718554
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Faradaic currents during electroforming of resistively switching Ag-Ge-Se type electrochemical metallization memory cells.
    Schindler C; Valov I; Waser R
    Phys Chem Chem Phys; 2009 Jul; 11(28):5974-9. PubMed ID: 19588020
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Water-Mediated Ionic Migration in Memristive Nanowires with a Tunable Resistive Switching Mechanism.
    Milano G; Raffone F; Luebben M; Boarino L; Cicero G; Valov I; Ricciardi C
    ACS Appl Mater Interfaces; 2020 Oct; 12(43):48773-48780. PubMed ID: 33052645
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials.
    Li Y; Long S; Liu Q; Lv H; Liu M
    Small; 2017 Sep; 13(35):. PubMed ID: 28417548
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Design of Materials Configuration for Optimizing Redox-Based Resistive Switching Memories.
    Chen S; Valov I
    Adv Mater; 2022 Jan; 34(3):e2105022. PubMed ID: 34695257
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Embedded nanoparticle dynamics and their influence on switching behaviour of resistive memory devices.
    Tappertzhofen S; Hofmann S
    Nanoscale; 2017 Nov; 9(44):17494-17504. PubMed ID: 29109988
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon.
    Almadhoun MN; Speckbacher M; Olsen BC; Luber EJ; Sayed SY; Tornow M; Buriak JM
    Nano Lett; 2021 Mar; 21(6):2666-2674. PubMed ID: 33689381
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Interfacial Redox Reactions Associated Ionic Transport in Oxide-Based Memories.
    Younis A; Chu D; Shah AH; Du H; Li S
    ACS Appl Mater Interfaces; 2017 Jan; 9(2):1585-1592. PubMed ID: 27958711
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching.
    Cho S; Yun C; Tappertzhofen S; Kursumovic A; Lee S; Lu P; Jia Q; Fan M; Jian J; Wang H; Hofmann S; MacManus-Driscoll JL
    Nat Commun; 2016 Aug; 7():12373. PubMed ID: 27491392
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Resistive Switching Memristor: On the Direct Observation of Physical Nature of Parameter Variability.
    Wang Z; Xiao W; Yang H; Zhang S; Zhang Y; Sun K; Wang T; Fu Y; Wang Q; Zhang J; Hasegawa T; He D
    ACS Appl Mater Interfaces; 2022 Jan; 14(1):1557-1567. PubMed ID: 34957821
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO₂/Pt cell.
    Yoon KJ; Lee MH; Kim GH; Song SJ; Seok JY; Han S; Yoon JH; Kim KM; Hwang CS
    Nanotechnology; 2012 May; 23(18):185202. PubMed ID: 22516621
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Observation of Resistive Switching Behavior in Crossbar Core-Shell Ni/NiO Nanowires Memristor.
    Ting YH; Chen JY; Huang CW; Huang TK; Hsieh CY; Wu WW
    Small; 2018 Feb; 14(6):. PubMed ID: 29205791
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Resistive switching in sub-micrometric ZnO polycrystalline films.
    Conti D; Laurenti M; Porro S; Giovinazzo C; Bianco S; Fra V; Chiolerio A; Pirri CF; Milano G; Ricciardi C
    Nanotechnology; 2019 Feb; 30(6):065707. PubMed ID: 30523900
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.