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28. Effects of precursor pre-treatment on the vapor deposition of WS Pam ME; Shi Y; Hu J; Zhao X; Dan J; Gong X; Huang S; Geng D; Pennycook S; Ang LK; Yang HY Nanoscale Adv; 2019 Mar; 1(3):953-960. PubMed ID: 36133195 [TBL] [Abstract][Full Text] [Related]
29. Solution-Based Synthesis of Few-Layer WS Abbas OA; Zeimpekis I; Wang H; Lewis AH; Sessions NP; Ebert M; Aspiotis N; Huang CC; Hewak D; Mailis S; Sazio P Sci Rep; 2020 Feb; 10(1):1696. PubMed ID: 32015500 [TBL] [Abstract][Full Text] [Related]
30. Coherent Coupling of WS2 Monolayers with Metallic Photonic Nanostructures at Room Temperature. Wang S; Li S; Chervy T; Shalabney A; Azzini S; Orgiu E; Hutchison JA; Genet C; Samorì P; Ebbesen TW Nano Lett; 2016 Jul; 16(7):4368-74. PubMed ID: 27266674 [TBL] [Abstract][Full Text] [Related]
31. Defect-induced photoluminescence in monolayer semiconducting transition metal dichalcogenides. Chow PK; Jacobs-Gedrim RB; Gao J; Lu TM; Yu B; Terrones H; Koratkar N ACS Nano; 2015 Feb; 9(2):1520-7. PubMed ID: 25603228 [TBL] [Abstract][Full Text] [Related]
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38. High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films. Iqbal MW; Iqbal MZ; Khan MF; Shehzad MA; Seo Y; Park JH; Hwang C; Eom J Sci Rep; 2015 Jun; 5():10699. PubMed ID: 26030008 [TBL] [Abstract][Full Text] [Related]
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40. Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary. Zhang Y; Zhang Y; Ji Q; Ju J; Yuan H; Shi J; Gao T; Ma D; Liu M; Chen Y; Song X; Hwang HY; Cui Y; Liu Z ACS Nano; 2013 Oct; 7(10):8963-71. PubMed ID: 24047054 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]