These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

158 related articles for article (PubMed ID: 26759358)

  • 21. Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity.
    Fernández-Garrido S; Kong X; Gotschke T; Calarco R; Geelhaar L; Trampert A; Brandt O
    Nano Lett; 2012 Dec; 12(12):6119-25. PubMed ID: 23130785
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Inclined angle-controlled growth of GaN nanorods on m-sapphire by metal organic chemical vapor deposition without a catalyst.
    Lee K; Chae S; Jang J; Min D; Kim J; Eom D; Yoo YS; Cho YH; Nam O
    Nanotechnology; 2015 Aug; 26(33):335601. PubMed ID: 26222432
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Surface and interface studies of GaN epitaxy on Si(111) via buffer layers.
    Yamada-Takamura Y; Wang ZT; Fujikawa Y; Sakurai T; Xue QK; Tolle J; Liu PL; Chizmeshya AV; Kouvetakis J; Tsong IS
    Phys Rev Lett; 2005 Dec; 95(26):266105. PubMed ID: 16486376
    [TBL] [Abstract][Full Text] [Related]  

  • 24. The mechanism of indium-assisted growth of (In)GaN nanorods: eliminating nanorod coalescence by indium-enhanced atomic migration.
    Xu Z; Yu Y; Han J; Wen L; Gao F; Zhang S; Li G
    Nanoscale; 2017 Nov; 9(43):16864-16870. PubMed ID: 29075717
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Polarity control of GaN epitaxial films grown on LiGaO
    Zheng Y; Wang W; Li X; Li Y; Huang L; Li G
    Phys Chem Chem Phys; 2017 Aug; 19(32):21467-21473. PubMed ID: 28759081
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE.
    Zhong A; Fan P; Zhong Y; Zhang D; Li F; Luo J; Xie Y; Hane K
    Nanoscale Res Lett; 2018 Feb; 13(1):51. PubMed ID: 29442172
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy.
    Schuster F; Hetzl M; Weiszer S; Garrido JA; de la Mata M; Magen C; Arbiol J; Stutzmann M
    Nano Lett; 2015 Mar; 15(3):1773-9. PubMed ID: 25633130
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Role of Ga Surface Diffusion in the Elongation Mechanism and Optical Properties of Catalyst-Free GaN Nanowires Grown by Molecular Beam Epitaxy.
    Gruart M; Jacopin G; Daudin B
    Nano Lett; 2019 Jul; 19(7):4250-4256. PubMed ID: 31241343
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Defect structure in heteroepitaxial semipolar (1122) (Ga, Al)N.
    Arroyo Rojas Dasilva Y; Chauvat MP; Ruterana P; Lahourcade L; Monroy E; Nataf G
    J Phys Condens Matter; 2010 Sep; 22(35):355802. PubMed ID: 21403298
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Long-Range Orbital Hybridization in Remote Epitaxy: The Nucleation Mechanism of GaN on Different Substrates
    Qu Y; Xu Y; Cao B; Wang Y; Wang J; Shi L; Xu K
    ACS Appl Mater Interfaces; 2022 Jan; 14(1):2263-2274. PubMed ID: 34978790
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Intentional polarity conversion of AlN epitaxial layers by oxygen.
    Stolyarchuk N; Markurt T; Courville A; March K; Zúñiga-Pérez J; Vennéguès P; Albrecht M
    Sci Rep; 2018 Sep; 8(1):14111. PubMed ID: 30237522
    [TBL] [Abstract][Full Text] [Related]  

  • 32. GaN/AlGaN Nanocolumn Ultraviolet Light-Emitting Diode Using Double-Layer Graphene as Substrate and Transparent Electrode.
    Høiaas IM; Liudi Mulyo A; Vullum PE; Kim DC; Ahtapodov L; Fimland BO; Kishino K; Weman H
    Nano Lett; 2019 Mar; 19(3):1649-1658. PubMed ID: 30702300
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy.
    Yu IS; Chang CP; Yang CP; Lin CT; Ma YR; Chen CC
    Nanoscale Res Lett; 2014; 9(1):682. PubMed ID: 25593560
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Effect of surface modification and laser repetition rate on growth, structural, electronic and optical properties of GaN nanorods on flexible Ti metal foil.
    Ramesh C; Tyagi P; Kaswan J; Yadav BS; Shukla AK; Senthil Kumar M; Kushvaha SS
    RSC Adv; 2020 Jan; 10(4):2113-2122. PubMed ID: 35494595
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Growth Mechanism and Properties of Self-Assembled InN Nanocolumns on Al Covered Si(111) Substrates by PA-MBE.
    Casallas-Moreno YL; Gallardo-Hernández S; Yee-Rendón CM; Ramírez-López M; Guillén-Cervantes A; Arias-Cerón JS; Huerta-Ruelas J; Santoyo-Salazar J; Mendoza-Álvarez JG; López-López M
    Materials (Basel); 2019 Sep; 12(19):. PubMed ID: 31574912
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Spiral growth and formation of stacking faults and vacancy islands during molecular beam epitaxy of InN on GaN(0001).
    Liu Y; Li L
    Nanotechnology; 2011 Oct; 22(42):425707. PubMed ID: 21941037
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Mapping Inversion Domain Boundaries along Single GaN Wires with Bragg Coherent X-ray Imaging.
    Li N; Labat S; Leake SJ; Dupraz M; Carnis J; Cornelius TW; Beutier G; Verdier M; Favre-Nicolin V; Schülli TU; Thomas O; Eymery J; Richard MI
    ACS Nano; 2020 Aug; 14(8):10305-10312. PubMed ID: 32806035
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Highly ordered catalyst-free and mask-free GaN nanorods on r-plane sapphire.
    Aschenbrenner T; Kruse C; Kunert G; Figge S; Sebald K; Kalden J; Voss T; Gutowski J; Hommel D
    Nanotechnology; 2009 Feb; 20(7):075604. PubMed ID: 19417425
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE.
    Shih CH; Huang TH; Schuber R; Chen YL; Chang L; Lo I; Chou MM; Schaadt DM
    Nanoscale Res Lett; 2011 Jun; 6(1):425. PubMed ID: 21711945
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate.
    Borysiuk J; Zytkiewicz ZR; Sobanska M; Wierzbicka A; Klosek K; Korona KP; Perkowska PS; Reszka A
    Nanotechnology; 2014 Apr; 25(13):135610. PubMed ID: 24598248
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 8.