These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

136 related articles for article (PubMed ID: 26789719)

  • 21. Impact of Rotational Twin Boundaries and Lattice Mismatch on III-V Nanowire Growth.
    Steidl M; Koppka C; Winterfeld L; Peh K; Galiana B; Supplie O; Kleinschmidt P; Runge E; Hannappel T
    ACS Nano; 2017 Sep; 11(9):8679-8689. PubMed ID: 28881138
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Highly uniform zinc blende GaAs nanowires on Si(111) using a controlled chemical oxide template.
    Tan SL; Genuist Y; den Hertog MI; Bellet-Amalric E; Mariette H; Pelekanos NT
    Nanotechnology; 2017 Jun; 28(25):255602. PubMed ID: 28475104
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Site-controlled VLS growth of planar nanowires: yield and mechanism.
    Zhang C; Miao X; Mohseni PK; Choi W; Li X
    Nano Lett; 2014 Dec; 14(12):6836-41. PubMed ID: 25343224
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Vertical p-type Cu-doped ZnO/n-type ZnO homojunction nanowire-based ultraviolet photodetector by the furnace system with hotwire assistance.
    Hsu CL; Gao YD; Chen YS; Hsueh TJ
    ACS Appl Mater Interfaces; 2014 Mar; 6(6):4277-85. PubMed ID: 24581048
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Investigating Size-Dependent Conductive Properties on Individual Si Nanowires.
    Hu XF; Li SJ; Wang J; Jiang ZM; Yang XJ
    Nanoscale Res Lett; 2020 Mar; 15(1):52. PubMed ID: 32124115
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.
    Thompson MD; Alhodaib A; Craig AP; Robson A; Aziz A; Krier A; Svensson J; Wernersson LE; Sanchez AM; Marshall AR
    Nano Lett; 2016 Jan; 16(1):182-7. PubMed ID: 26675242
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Crystal orientation-dependent tensile mechanical behavior and deformation mechanisms of zinc-blende ZnSe nanowires.
    Islam ASMJ; Hasan MS; Islam MS; Bhuiyan AG; Stampfl C; Park J
    Sci Rep; 2023 Mar; 13(1):3532. PubMed ID: 36864111
    [TBL] [Abstract][Full Text] [Related]  

  • 28. General existence of flexural mode doublets in nanowires targeting vectorial sensing applications.
    Zheng Z; Zhan H; Nie Y; Bo A; Xu X; Gu Y
    Phys Chem Chem Phys; 2019 Feb; 21(8):4136-4144. PubMed ID: 30411758
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Nonpolar-Oriented Wurtzite InP Nanowires with Electron Mobility Approaching the Theoretical Limit.
    Sun J; Yin Y; Han M; Yang ZX; Lan C; Liu L; Wang Y; Han N; Shen L; Wu X; Ho JC
    ACS Nano; 2018 Oct; 12(10):10410-10418. PubMed ID: 30285417
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Characterizing defects and transport in Si nanowire devices using Kelvin probe force microscopy.
    Bae SS; Prokopuk N; Quitoriano NJ; Adams SM; Ragan R
    Nanotechnology; 2012 Oct; 23(40):405706. PubMed ID: 22995919
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Guiding vapor-liquid-solid nanowire growth using SiO2.
    Quitoriano NJ; Wu W; Kamins TI
    Nanotechnology; 2009 Apr; 20(14):145303. PubMed ID: 19420522
    [TBL] [Abstract][Full Text] [Related]  

  • 32. A Novel Growth Method To Improve the Quality of GaAs Nanowires Grown by Ga-Assisted Chemical Beam Epitaxy.
    García Núñez C; Braña AF; López N; García BJ
    Nano Lett; 2018 Jun; 18(6):3608-3615. PubMed ID: 29739187
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate.
    Borysiuk J; Zytkiewicz ZR; Sobanska M; Wierzbicka A; Klosek K; Korona KP; Perkowska PS; Reszka A
    Nanotechnology; 2014 Apr; 25(13):135610. PubMed ID: 24598248
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Planar GaAs nanowires on GaAs (100) substrates: self-aligned, nearly twin-defect free, and transfer-printable.
    Fortuna SA; Wen J; Chun IS; Li X
    Nano Lett; 2008 Dec; 8(12):4421-7. PubMed ID: 19367971
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular-beam epitaxy.
    Wen L; Pan D; Liao D; Zhao J
    Nanotechnology; 2020 Apr; 31(15):155601. PubMed ID: 31783375
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Photoluminescence properties of InAs nanowires grown on GaAs and Si substrates.
    Sun MH; Leong ES; Chin AH; Ning CZ; Cirlin GE; Samsonenko YB; Dubrovskii VG; Chuang L; Chang-Hasnain C
    Nanotechnology; 2010 Aug; 21(33):335705. PubMed ID: 20657047
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Direct Electrical Probing of Periodic Modulation of Zinc-Dopant Distributions in Planar Gallium Arsenide Nanowires.
    Choi W; Seabron E; Mohseni PK; Kim JD; Gokus T; Cernescu A; Pochet P; Johnson HT; Wilson WL; Li X
    ACS Nano; 2017 Feb; 11(2):1530-1539. PubMed ID: 28135065
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Self-catalyzed GaAsP nanowires grown on silicon substrates by solid-source molecular beam epitaxy.
    Zhang Y; Aagesen M; Holm JV; Jørgensen HI; Wu J; Liu H
    Nano Lett; 2013 Aug; 13(8):3897-902. PubMed ID: 23899047
    [TBL] [Abstract][Full Text] [Related]  

  • 39. High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.
    Ra YH; Navamathavan R; Park JH; Lee CR
    ACS Appl Mater Interfaces; 2013 Mar; 5(6):2111-7. PubMed ID: 23432423
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Room-Temperature Midwavelength Infrared InAsSb Nanowire Photodetector Arrays with Al
    Ren D; Azizur-Rahman KM; Rong Z; Juang BC; Somasundaram S; Shahili M; Farrell AC; Williams BS; Huffaker DL
    Nano Lett; 2019 May; 19(5):2793-2802. PubMed ID: 30676752
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 7.