These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
125 related articles for article (PubMed ID: 26849776)
1. A 250 mV Cu/SiO2/W Memristor with Half-Integer Quantum Conductance States. Nandakumar SR; Minvielle M; Nagar S; Dubourdieu C; Rajendran B Nano Lett; 2016 Mar; 16(3):1602-8. PubMed ID: 26849776 [TBL] [Abstract][Full Text] [Related]
2. Insights on the variability of Cu filament formation in the SiO Maudet F; Hammud A; Wollgarten M; Deshpande V; Dubourdieu C Nanotechnology; 2023 Mar; 34(24):. PubMed ID: 36806199 [TBL] [Abstract][Full Text] [Related]
3. Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications. Milano G; Aono M; Boarino L; Celano U; Hasegawa T; Kozicki M; Majumdar S; Menghini M; Miranda E; Ricciardi C; Tappertzhofen S; Terabe K; Valov I Adv Mater; 2022 Aug; 34(32):e2201248. PubMed ID: 35404522 [TBL] [Abstract][Full Text] [Related]
4. Observation of Quantized and Partial Quantized Conductance in Polymer-Suspended Graphene Nanoplatelets. Kang Y; Ruan H; Claus RO; Heremans J; Orlowski M Nanoscale Res Lett; 2016 Dec; 11(1):179. PubMed ID: 27044308 [TBL] [Abstract][Full Text] [Related]
5. Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering. Ismail M; Mahata C; Kang M; Kim S Nanoscale Res Lett; 2022 Jun; 17(1):61. PubMed ID: 35749003 [TBL] [Abstract][Full Text] [Related]
6. Metal doped polyaniline as neuromorphic circuit elements for in-materia computing. Higuchi R; Lilak S; Sillin HO; Tsuruoka T; Kunitake M; Nakayama T; Gimzewski JK; Stieg AZ Sci Technol Adv Mater; 2023; 24(1):2178815. PubMed ID: 36872943 [TBL] [Abstract][Full Text] [Related]
7. Reliable Memristive Switching Memory Devices Enabled by Densely Packed Silver Nanocone Arrays as Electric-Field Concentrators. You BK; Kim JM; Joe DJ; Yang K; Shin Y; Jung YS; Lee KJ ACS Nano; 2016 Oct; 10(10):9478-9488. PubMed ID: 27718554 [TBL] [Abstract][Full Text] [Related]
8. Polymer Analog Memristive Synapse with Atomic-Scale Conductive Filament for Flexible Neuromorphic Computing System. Jang BC; Kim S; Yang SY; Park J; Cha JH; Oh J; Choi J; Im SG; Dravid VP; Choi SY Nano Lett; 2019 Feb; 19(2):839-849. PubMed ID: 30608706 [TBL] [Abstract][Full Text] [Related]
9. In Situ Resistive Switching Effect Scrutinization on Co-Designed Graphene Sensor. Xiong F; Wang Z; Bøjesen ED; Xiong X; Zhu Z; Dong M Small; 2021 Feb; 17(8):e2007053. PubMed ID: 33522141 [TBL] [Abstract][Full Text] [Related]
10. Stochastic memristive devices for computing and neuromorphic applications. Gaba S; Sheridan P; Zhou J; Choi S; Lu W Nanoscale; 2013 Jul; 5(13):5872-8. PubMed ID: 23698627 [TBL] [Abstract][Full Text] [Related]
11. Understanding the Resistive Switching Behaviors of Top Electrode (Au, Cu, and Al)-Dependent TiO Yu Y; Ding Z; Ren Y; Wang X; Quan H; Jia H; Jiang C ACS Omega; 2024 Jun; 9(23):24601-24609. PubMed ID: 38882132 [TBL] [Abstract][Full Text] [Related]
12. Conductance quantization in a Ag filament-based polymer resistive memory. Gao S; Zeng F; Chen C; Tang G; Lin Y; Zheng Z; Song C; Pan F Nanotechnology; 2013 Aug; 24(33):335201. PubMed ID: 23893907 [TBL] [Abstract][Full Text] [Related]
13. Ferroelectric tunnel memristor. Kim DJ; Lu H; Ryu S; Bark CW; Eom CB; Tsymbal EY; Gruverman A Nano Lett; 2012 Nov; 12(11):5697-702. PubMed ID: 23039785 [TBL] [Abstract][Full Text] [Related]
14. Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications. Ielmini D; Milo V J Comput Electron; 2017; 16(4):1121-1143. PubMed ID: 31997981 [TBL] [Abstract][Full Text] [Related]
15. Magnetism modulation and conductance quantization in a gadolinium oxide memristor. Xie Z; Gao S; Ye X; Yang H; Gong G; Lu Y; Ye J; Liu G; Li RW Phys Chem Chem Phys; 2020 Nov; 22(45):26322-26329. PubMed ID: 33175937 [TBL] [Abstract][Full Text] [Related]
16. Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate. Rahmani MK; Kim MH; Hussain F; Abbas Y; Ismail M; Hong K; Mahata C; Choi C; Park BG; Kim S Nanomaterials (Basel); 2020 May; 10(5):. PubMed ID: 32455892 [TBL] [Abstract][Full Text] [Related]
18. High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm. Alibart F; Gao L; Hoskins BD; Strukov DB Nanotechnology; 2012 Feb; 23(7):075201. PubMed ID: 22260949 [TBL] [Abstract][Full Text] [Related]
19. Light-Gated Memristor with Integrated Logic and Memory Functions. Tan H; Liu G; Yang H; Yi X; Pan L; Shang J; Long S; Liu M; Wu Y; Li RW ACS Nano; 2017 Nov; 11(11):11298-11305. PubMed ID: 29028312 [TBL] [Abstract][Full Text] [Related]
20. Bipolar Analog Memristors as Artificial Synapses for Neuromorphic Computing. Wang R; Shi T; Zhang X; Wang W; Wei J; Lu J; Zhao X; Wu Z; Cao R; Long S; Liu Q; Liu M Materials (Basel); 2018 Oct; 11(11):. PubMed ID: 30373122 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]