These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

162 related articles for article (PubMed ID: 26864968)

  • 1. Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications.
    Geum DM; Park MS; Lim JY; Yang HD; Song JD; Kim CZ; Yoon E; Kim S; Choi WJ
    Sci Rep; 2016 Feb; 6():20610. PubMed ID: 26864968
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Beyond CMOS: heterogeneous integration of III-V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems.
    Kazior TE
    Philos Trans A Math Phys Eng Sci; 2014 Mar; 372(2012):20130105. PubMed ID: 24567473
    [TBL] [Abstract][Full Text] [Related]  

  • 3. InGaP/GaAs heterojunction phototransistors transferred to a Si substrate by metal wafer bonding combined with epitaxial lift-off.
    Park MS; Geum DM; Kyhm JH; Song JD; Kim S; Choi WJ
    Opt Express; 2015 Oct; 23(21):26888-94. PubMed ID: 26480350
    [TBL] [Abstract][Full Text] [Related]  

  • 4. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity.
    Kang K; Xie S; Huang L; Han Y; Huang PY; Mak KF; Kim CJ; Muller D; Park J
    Nature; 2015 Apr; 520(7549):656-60. PubMed ID: 25925478
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Room-Temperature Lasing from Monolithically Integrated GaAs Microdisks on Silicon.
    Wirths S; Mayer BF; Schmid H; Sousa M; Gooth J; Riel H; Moselund KE
    ACS Nano; 2018 Mar; 12(3):2169-2175. PubMed ID: 29365252
    [TBL] [Abstract][Full Text] [Related]  

  • 6. III-V/Si hybrid photonic devices by direct fusion bonding.
    Tanabe K; Watanabe K; Arakawa Y
    Sci Rep; 2012; 2():349. PubMed ID: 22470842
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Heterogeneous integration of epitaxial Ge on Si using AlAs/GaAs buffer architecture: suitability for low-power fin field-effect transistors.
    Hudait MK; Clavel M; Goley P; Jain N; Zhu Y
    Sci Rep; 2014 Nov; 4():6964. PubMed ID: 25376723
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors.
    Ko H; Takei K; Kapadia R; Chuang S; Fang H; Leu PW; Ganapathi K; Plis E; Kim HS; Chen SY; Madsen M; Ford AC; Chueh YL; Krishna S; Salahuddin S; Javey A
    Nature; 2010 Nov; 468(7321):286-9. PubMed ID: 21068839
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001).
    Zhou T; Tang M; Xiang G; Xiang B; Hark S; Martin M; Baron T; Pan S; Park JS; Liu Z; Chen S; Zhang Z; Liu H
    Nat Commun; 2020 Feb; 11(1):977. PubMed ID: 32080180
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon.
    Du Y; Xu B; Wang G; Miao Y; Li B; Kong Z; Dong Y; Wang W; Radamson HH
    Nanomaterials (Basel); 2022 Feb; 12(5):. PubMed ID: 35269230
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Heterogeneous and Monolithic 3D Integration of III-V-Based Radio Frequency Devices on Si CMOS Circuits.
    Jeong J; Kim SK; Kim J; Geum DM; Kim D; Jo E; Jeong H; Park J; Jang JH; Choi S; Kwon I; Kim S
    ACS Nano; 2022 Jun; 16(6):9031-9040. PubMed ID: 35437991
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Performance comparison of III-V//Si and III-V//InGaAs multi-junction solar cells fabricated by the combination of mechanical stacking and wire bonding.
    Kao YC; Chou HM; Hsu SC; Lin A; Lin CC; Shih ZH; Chang CL; Hong HF; Horng RH
    Sci Rep; 2019 Mar; 9(1):4308. PubMed ID: 30867491
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Flexible GaAs photodetector arrays hetero-epitaxially grown on GaP/Si for a low-cost III-V wearable photonics platform.
    Hong N; Chu RJ; Kang SS; Ryu G; Han JH; Yu KJ; Jung D; Choi WJ
    Opt Express; 2020 Nov; 28(24):36559-36567. PubMed ID: 33379747
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Quantum cascade lasers grown on silicon.
    Nguyen-Van H; Baranov AN; Loghmari Z; Cerutti L; Rodriguez JB; Tournet J; Narcy G; Boissier G; Patriarche G; Bahriz M; Tournié E; Teissier R
    Sci Rep; 2018 May; 8(1):7206. PubMed ID: 29739962
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Kinetic study of hydrogen lateral diffusion at high temperature in a directly-bonded InP-SiO
    Besancon C; Fournel F; Sanchez L; Vaissiere N; Dupré C; Le Goec JP; Muffato V; Jany C; Bassani F; David S; Baron T; Decobert J
    Nanotechnology; 2020 Mar; 31(13):135205. PubMed ID: 31778988
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Uprooting defects to enable high-performance III-V optoelectronic devices on silicon.
    Bioud YA; Boucherif A; Myronov M; Soltani A; Patriarche G; Braidy N; Jellite M; Drouin D; Arès R
    Nat Commun; 2019 Sep; 10(1):4322. PubMed ID: 31541107
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G.
    Ren Z; Xu J; Le X; Lee C
    Micromachines (Basel); 2021 Aug; 12(8):. PubMed ID: 34442568
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics.
    Cheng CW; Shiu KT; Li N; Han SJ; Shi L; Sadana DK
    Nat Commun; 2013; 4():1577. PubMed ID: 23481385
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Ge photodetector monolithically integrated with amorphous Si waveguide on wafer-bonded Ge-on-insulator substrate.
    Kang J; Takagi S; Takenaka M
    Opt Express; 2018 Nov; 26(23):30546-30555. PubMed ID: 30469952
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Monolithic III-V on Silicon Plasmonic Nanolaser Structure for Optical Interconnects.
    Li N; Liu K; Sorger VJ; Sadana DK
    Sci Rep; 2015 Sep; 5():14067. PubMed ID: 26369698
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.