These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

204 related articles for article (PubMed ID: 26907298)

  • 1. Investigation of the Performance of HEMT-Based NO, NO₂ and NH₃ Exhaust Gas Sensors for Automotive Antipollution Systems.
    Halfaya Y; Bishop C; Soltani A; Sundaram S; Aubry V; Voss PL; Salvestrini JP; Ougazzaden A
    Sensors (Basel); 2016 Feb; 16(3):273. PubMed ID: 26907298
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Response Enhancement of Pt-AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature.
    Vuong TA; Cha HY; Kim H
    Micromachines (Basel); 2021 May; 12(5):. PubMed ID: 34068454
    [TBL] [Abstract][Full Text] [Related]  

  • 3. High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.
    Dong Y; Son DH; Dai Q; Lee JH; Won CH; Kim JG; Chen D; Lee JH; Lu H; Zhang R; Zheng Y
    Sensors (Basel); 2018 Apr; 18(5):. PubMed ID: 29695112
    [TBL] [Abstract][Full Text] [Related]  

  • 4. High Selectivity Hydrogen Gas Sensor Based on WO
    Nguyen VC; Cha HY; Kim H
    Sensors (Basel); 2023 Mar; 23(7):. PubMed ID: 37050525
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Aluminum gallium nitride (GaN)/GaN high electron mobility transistor-based sensors for glucose detection in exhaled breath condensate.
    Chu BH; Kang BS; Hung SC; Chen KH; Ren F; Sciullo A; Gila BP; Pearton SJ
    J Diabetes Sci Technol; 2010 Jan; 4(1):171-9. PubMed ID: 20167182
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Optimization of gate geometry towards high-sensitivity AlGaN/GaN pH sensor.
    Zhang H; Tu J; Yang S; Sheng K; Wang P
    Talanta; 2019 Dec; 205():120134. PubMed ID: 31450402
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: Structure, Mechanisms, and Applications.
    Li C; Chen X; Wang Z
    Micromachines (Basel); 2024 Feb; 15(3):. PubMed ID: 38542577
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Potassium selective chemically modified field effect transistors based on AlGaN/GaN two-dimensional electron gas heterostructures.
    Alifragis Y; Volosirakis A; Chaniotakis NA; Konstantinidis G; Adikimenakis A; Georgakilas A
    Biosens Bioelectron; 2007 Jun; 22(12):2796-801. PubMed ID: 17098415
    [TBL] [Abstract][Full Text] [Related]  

  • 9. High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiN
    Yang C; Luo X; Sun T; Zhang A; Ouyang D; Deng S; Wei J; Zhang B
    Nanoscale Res Lett; 2019 Jun; 14(1):191. PubMed ID: 31165332
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Open-gated pH sensor fabricated on an undoped-AlGaN/GaN HEMT structure.
    Abidin MS; Hashim AM; Sharifabad ME; Rahman SF; Sadoh T
    Sensors (Basel); 2011; 11(3):3067-77. PubMed ID: 22163786
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Boronate probe-based hydrogen peroxide detection with AlGaN/GaN HEMT sensor.
    Mahaboob I; Reinertsen RJ; McEwen B; Hogan K; Rocco E; Melendez JA; Cady NC; Shahedipour-Sandvik F
    Exp Biol Med (Maywood); 2021 Mar; 246(5):523-528. PubMed ID: 33203229
    [TBL] [Abstract][Full Text] [Related]  

  • 12. A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer.
    Weng YC; Lin YC; Hsu HT; Kao ML; Huang HY; Ueda D; Ha MT; Yang CY; Maa JS; Chang EY; Dee CF
    Materials (Basel); 2022 Jan; 15(3):. PubMed ID: 35160649
    [TBL] [Abstract][Full Text] [Related]  

  • 13. An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology.
    Alim MA; Gaquiere C; Crupi G
    Micromachines (Basel); 2021 May; 12(5):. PubMed ID: 34065962
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation.
    Nguyen VC; Kim K; Kim H
    Micromachines (Basel); 2021 Apr; 12(4):. PubMed ID: 33916387
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.
    Shih HY; Chu FC; Das A; Lee CY; Chen MJ; Lin RM
    Nanoscale Res Lett; 2016 Dec; 11(1):235. PubMed ID: 27129687
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study.
    Jang KW; Hwang IT; Kim HJ; Lee SH; Lim JW; Kim HS
    Micromachines (Basel); 2019 Dec; 11(1):. PubMed ID: 31906083
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Performance Enhancement in N
    Yang SK; Mazumder S; Wu ZG; Wang YH
    Materials (Basel); 2021 Mar; 14(6):. PubMed ID: 33801062
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC.
    Heo C; Jang J; Lee K; So B; Lee K; Ko K; Nam O
    J Nanosci Nanotechnol; 2017 Jan; 17(1):577-80. PubMed ID: 29630184
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer.
    Jia X; Chen D; Bin L; Lu H; Zhang R; Zheng Y
    Sci Rep; 2016 Jun; 6():27728. PubMed ID: 27278795
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Highly sensitive AlGaN/GaN HEMT biosensors using an ethanolamine modification strategy for bioassay applications.
    Gu Z; Wang J; Miao B; Zhao L; Liu X; Wu D; Li J
    RSC Adv; 2019 May; 9(27):15341-15349. PubMed ID: 35514822
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 11.