267 related articles for article (PubMed ID: 26916430)
21. Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS
Susanto I; Tsai CY; Ho YT; Tsai PY; Yu IS
Nanomaterials (Basel); 2021 May; 11(6):. PubMed ID: 34073367
[TBL] [Abstract][Full Text] [Related]
22. Pit assisted oxygen chemisorption on GaN surfaces.
Mishra M; Krishna T C S; Aggarwal N; Kaur M; Singh S; Gupta G
Phys Chem Chem Phys; 2015 Jun; 17(23):15201-8. PubMed ID: 25991084
[TBL] [Abstract][Full Text] [Related]
23. Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy.
Tasi CT; Wang WK; Ou SL; Huang SY; Horng RH; Wuu DS
Nanomaterials (Basel); 2018 Sep; 8(9):. PubMed ID: 30201865
[TBL] [Abstract][Full Text] [Related]
24. Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.
Zhao G; Wang L; Yang S; Li H; Wei H; Han D; Wang Z
Sci Rep; 2016 Feb; 6():20787. PubMed ID: 26861595
[TBL] [Abstract][Full Text] [Related]
25. Improved crystal quality and enhanced optical performance of GaN enabled by ion implantation induced high-quality nucleation.
Tao H; Xu S; Zhang J; Su H; Gao Y; Zhang Y; Zhou H; Hao Y
Opt Express; 2023 Jun; 31(13):20850-20860. PubMed ID: 37381199
[TBL] [Abstract][Full Text] [Related]
26. Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH3 interrupted etching.
Son JS; Honda Y; Amano H
Opt Express; 2014 Feb; 22(3):3585-92. PubMed ID: 24663649
[TBL] [Abstract][Full Text] [Related]
27. Studies of Defect Structure in Epitaxial AlN/GaN Films Grown on (111) 3C-SiC.
Serban AB; Ene VL; Dinescu D; Zai I; Djourelov N; Vasile BS; Leca V
Nanomaterials (Basel); 2021 May; 11(5):. PubMed ID: 34069169
[TBL] [Abstract][Full Text] [Related]
28. Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy.
Roy A; Movva HC; Satpati B; Kim K; Dey R; Rai A; Pramanik T; Guchhait S; Tutuc E; Banerjee SK
ACS Appl Mater Interfaces; 2016 Mar; 8(11):7396-402. PubMed ID: 26939890
[TBL] [Abstract][Full Text] [Related]
29. Inclined angle-controlled growth of GaN nanorods on m-sapphire by metal organic chemical vapor deposition without a catalyst.
Lee K; Chae S; Jang J; Min D; Kim J; Eom D; Yoo YS; Cho YH; Nam O
Nanotechnology; 2015 Aug; 26(33):335601. PubMed ID: 26222432
[TBL] [Abstract][Full Text] [Related]
30. Tuning the Surface Morphologies and Properties of ZnO Films by the Design of Interfacial Layer.
Li Y; Wang HQ; Zhou H; Du D; Geng W; Lin D; Chen X; Zhan H; Zhou Y; Kang J
Nanoscale Res Lett; 2017 Sep; 12(1):551. PubMed ID: 28952132
[TBL] [Abstract][Full Text] [Related]
31. Investigations of AlN thin film crystalline properties in a wide temperature range by in situ X-ray diffraction measurements: Correlation with AlN/sapphire-based SAW structure performance.
Aït Aïssa K; Elmazria O; Boulet P; Aubert T; Legrani O; Mangin D
IEEE Trans Ultrason Ferroelectr Freq Control; 2015 Jul; 62(7):1397-402. PubMed ID: 26168184
[TBL] [Abstract][Full Text] [Related]
32. Boron nitride nanotubes as a heat sinking and stress-relaxation layer for high performance light-emitting diodes.
Seo TH; Lee GH; Park AH; Cho H; Kim JH; Chandramohan S; Jeon SR; Jang SG; Kim MJ; Suh EK
Nanoscale; 2017 Nov; 9(42):16223-16231. PubMed ID: 29043367
[TBL] [Abstract][Full Text] [Related]
33. Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films.
Katiyar AK; Grimm A; Bar R; Schmidt J; Wietler T; Osten HJ; Ray SK
Nanotechnology; 2016 Oct; 27(43):435204. PubMed ID: 27659285
[TBL] [Abstract][Full Text] [Related]
34. Effect of growth temperature on the structural and optical properties of few-layer hexagonal boron nitride by molecular beam epitaxy.
Laleyan DA; Mengle K; Zhao S; Wang Y; Kioupakis E; Mi Z
Opt Express; 2018 Sep; 26(18):23031-23039. PubMed ID: 30184959
[TBL] [Abstract][Full Text] [Related]
35. Differences in the nanoscale electrical properties of GaN films grown on sapphire and ZnO substrates by molecular beam epitaxy.
Chen SH; Su CW; Chang LH; Tsai TH
Microsc Res Tech; 2017 Jul; 80(7):731-736. PubMed ID: 28248446
[TBL] [Abstract][Full Text] [Related]
36. Comprehensive Analysis of Metal Modulated Epitaxial GaN.
Ahmad H; Motoki K; Clinton EA; Matthews CM; Engel Z; Doolittle WA
ACS Appl Mater Interfaces; 2020 Aug; 12(33):37693-37712. PubMed ID: 32706570
[TBL] [Abstract][Full Text] [Related]
37. Controlling of the electrical resistivity of GaN layer using AIN nucleation layer.
Yi MS; Kim HJ; Lee HH
J Nanosci Nanotechnol; 2011 Aug; 11(8):7159-62. PubMed ID: 22103147
[TBL] [Abstract][Full Text] [Related]
38. Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy.
Liu CW; Dai JJ; Wu SK; Diep NQ; Huynh SH; Mai TT; Wen HC; Yuan CT; Chou WC; Shen JL; Luc HH
Sci Rep; 2020 Jul; 10(1):12972. PubMed ID: 32737426
[TBL] [Abstract][Full Text] [Related]
39. Reduction of dislocations in α-Ga
Son H; Choi YJ; Hong SK; Park JH; Jeon DW
IUCrJ; 2021 May; 8(Pt 3):462-467. PubMed ID: 33953932
[TBL] [Abstract][Full Text] [Related]
40. Structural and Optical Properties of GaN Film on Copper and Graphene/Copper Metal Foils Grown by Laser Molecular Beam Epitaxy.
Ramesh C; Tyagi P; Bera S; Gautam S; Subhedar KM; Senthil Kumar M; Kushvaha SS
J Nanosci Nanotechnol; 2020 Jun; 20(6):3929-3934. PubMed ID: 31748098
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
