These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

207 related articles for article (PubMed ID: 26938106)

  • 1. Electron Doping of Ultrathin Black Phosphorus with Cu Adatoms.
    Koenig SP; Doganov RA; Seixas L; Carvalho A; Tan JY; Watanabe K; Taniguchi T; Yakovlev N; Castro Neto AH; Özyilmaz B
    Nano Lett; 2016 Apr; 16(4):2145-51. PubMed ID: 26938106
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Black Phosphorus N-Type Field-Effect Transistor with Ultrahigh Electron Mobility via Aluminum Adatoms Doping.
    Prakash A; Cai Y; Zhang G; Zhang YW; Ang KW
    Small; 2017 Feb; 13(5):. PubMed ID: 27862963
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Ambipolar phosphorene field effect transistor.
    Das S; Demarteau M; Roelofs A
    ACS Nano; 2014 Nov; 8(11):11730-8. PubMed ID: 25329532
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Transport properties of pristine few-layer black phosphorus by van der Waals passivation in an inert atmosphere.
    Doganov RA; O'Farrell EC; Koenig SP; Yeo Y; Ziletti A; Carvalho A; Campbell DK; Coker DF; Watanabe K; Taniguchi T; Castro Neto AH; Özyilmaz B
    Nat Commun; 2015 Apr; 6():6647. PubMed ID: 25858614
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Air-stable n-doped black phosphorus transistor by thermal deposition of metal adatoms.
    Wang Z; Lu J; Wang J; Li J; Du Z; Wu H; Liao L; Chu PK; Yu XF
    Nanotechnology; 2019 Mar; 30(13):135201. PubMed ID: 30630138
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling.
    Du Y; Liu H; Deng Y; Ye PD
    ACS Nano; 2014 Oct; 8(10):10035-42. PubMed ID: 25314022
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Efficient and reliable surface charge transfer doping of black phosphorus via atomic layer deposited MgO toward high performance complementary circuits.
    Liao W; Wang L; Chen L; Wei W; Zeng Z; Feng X; Huang L; Tan WC; Huang X; Ang KW; Zhu C
    Nanoscale; 2018 Sep; 10(36):17007-17014. PubMed ID: 30203816
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Air-stable transport in graphene-contacted, fully encapsulated ultrathin black phosphorus-based field-effect transistors.
    Avsar A; Vera-Marun IJ; Tan JY; Watanabe K; Taniguchi T; Castro Neto AH; Özyilmaz B
    ACS Nano; 2015 Apr; 9(4):4138-45. PubMed ID: 25769342
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Phosphorene: an unexplored 2D semiconductor with a high hole mobility.
    Liu H; Neal AT; Zhu Z; Luo Z; Xu X; Tománek D; Ye PD
    ACS Nano; 2014 Apr; 8(4):4033-41. PubMed ID: 24655084
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer.
    Lee YT; Kwon H; Kim JS; Kim HH; Lee YJ; Lim JA; Song YW; Yi Y; Choi WK; Hwang DK; Im S
    ACS Nano; 2015 Oct; 9(10):10394-401. PubMed ID: 26370537
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers.
    Li D; Chen M; Zong Q; Zhang Z
    Nano Lett; 2017 Oct; 17(10):6353-6359. PubMed ID: 28956929
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices.
    Wang G; Bao L; Pei T; Ma R; Zhang YY; Sun L; Zhang G; Yang H; Li J; Gu C; Du S; Pantelides ST; Schrimpf RD; Gao HJ
    Nano Lett; 2016 Nov; 16(11):6870-6878. PubMed ID: 27786486
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating.
    Buscema M; Groenendijk DJ; Steele GA; van der Zant HS; Castellanos-Gomez A
    Nat Commun; 2014 Aug; 5():4651. PubMed ID: 25164986
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Native Oxide Seeded Spontaneous Integration of Dielectrics on Exfoliated Black Phosphorus.
    Yang H; Xiang D; Mao H; Liu T; Wang Y; Guo R; Zheng Y; Ye X; Gao J; Ge Q; Deng C; Cai W; Zhang X; Qin S; Chen W
    ACS Appl Mater Interfaces; 2020 May; 12(21):24411-24418. PubMed ID: 32352282
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Scalable Patterning of Encapsulated Black Phosphorus.
    Clark N; Nguyen L; Hamer MJ; Schedin F; Lewis EA; Prestat E; Garner A; Cao Y; Zhu M; Kashtiban R; Sloan J; Kepaptsoglou D; Gorbachev RV; Haigh SJ
    Nano Lett; 2018 Sep; 18(9):5373-5381. PubMed ID: 30067903
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Probing Out-of-Plane Charge Transport in Black Phosphorus with Graphene-Contacted Vertical Field-Effect Transistors.
    Kang J; Jariwala D; Ryder CR; Wells SA; Choi Y; Hwang E; Cho JH; Marks TJ; Hersam MC
    Nano Lett; 2016 Apr; 16(4):2580-5. PubMed ID: 26950174
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Ambipolar insulator-to-metal transition in black phosphorus by ionic-liquid gating.
    Saito Y; Iwasa Y
    ACS Nano; 2015 Mar; 9(3):3192-8. PubMed ID: 25712777
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers.
    Ra HS; Lee AY; Kwak DH; Jeong MH; Lee JS
    ACS Appl Mater Interfaces; 2018 Jan; 10(1):925-932. PubMed ID: 29256593
    [TBL] [Abstract][Full Text] [Related]  

  • 19. van der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices.
    Avsar A; Tan JY; Luo X; Khoo KH; Yeo Y; Watanabe K; Taniguchi T; Quek SY; Özyilmaz B
    Nano Lett; 2017 Sep; 17(9):5361-5367. PubMed ID: 28792227
    [TBL] [Abstract][Full Text] [Related]  

  • 20. The impact of hexagonal boron nitride encapsulation on the structural and vibrational properties of few layer black phosphorus.
    Birowska M; Urban J; Baranowski M; Maude DK; Plochocka P; Szwacki NG
    Nanotechnology; 2019 May; 30(19):195201. PubMed ID: 30699401
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 11.