These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

210 related articles for article (PubMed ID: 26977902)

  • 1. Black Phosphorus Flexible Thin Film Transistors at Gighertz Frequencies.
    Zhu W; Park S; Yogeesh MN; McNicholas KM; Bank SR; Akinwande D
    Nano Lett; 2016 Apr; 16(4):2301-6. PubMed ID: 26977902
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Black phosphorus radio-frequency transistors.
    Wang H; Wang X; Xia F; Wang L; Jiang H; Xia Q; Chin ML; Dubey M; Han SJ
    Nano Lett; 2014 Nov; 14(11):6424-9. PubMed ID: 25347787
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Flexible black phosphorus ambipolar transistors, circuits and AM demodulator.
    Zhu W; Yogeesh MN; Yang S; Aldave SH; Kim JS; Sonde S; Tao L; Lu N; Akinwande D
    Nano Lett; 2015 Mar; 15(3):1883-90. PubMed ID: 25715122
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Large-Velocity Saturation in Thin-Film Black Phosphorus Transistors.
    Chen X; Chen C; Levi A; Houben L; Deng B; Yuan S; Ma C; Watanabe K; Taniguchi T; Naveh D; Du X; Xia F
    ACS Nano; 2018 May; 12(5):5003-5010. PubMed ID: 29714472
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Flexible Graphene Field-Effect Transistors Encapsulated in Hexagonal Boron Nitride.
    Petrone N; Chari T; Meric I; Wang L; Shepard KL; Hone J
    ACS Nano; 2015 Sep; 9(9):8953-9. PubMed ID: 26261867
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Carbon Nanotube Film-Based Radio Frequency Transistors with Maximum Oscillation Frequency above 100 GHz.
    Zhong D; Shi H; Ding L; Zhao C; Liu J; Zhou J; Zhang Z; Peng LM
    ACS Appl Mater Interfaces; 2019 Nov; 11(45):42496-42503. PubMed ID: 31618003
    [TBL] [Abstract][Full Text] [Related]  

  • 7. High-Performance CVD Bilayer MoS
    Gao Q; Zhang C; Yang K; Pan X; Zhang Z; Yang J; Yi Z; Chi F; Liu L
    Micromachines (Basel); 2021 Apr; 12(4):. PubMed ID: 33923705
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Ultrashort Channel Length Black Phosphorus Field-Effect Transistors.
    Miao J; Zhang S; Cai L; Scherr M; Wang C
    ACS Nano; 2015 Sep; 9(9):9236-43. PubMed ID: 26277886
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Black Phosphorus High-Frequency Transistors with Local Contact Bias.
    Li C; Xiong K; Li L; Guo Q; Chen X; Madjar A; Watanabe K; Taniguchi T; Hwang JCM; Xia F
    ACS Nano; 2020 Feb; 14(2):2118-2125. PubMed ID: 31922387
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS
    Gao Q; Zhang C; Liu P; Hu Y; Yang K; Yi Z; Liu L; Pan X; Zhang Z; Yang J; Chi F
    Nanomaterials (Basel); 2021 Jun; 11(6):. PubMed ID: 34204492
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Mechanically robust 39 GHz cut-off frequency graphene field effect transistors on flexible substrates.
    Wei W; Pallecchi E; Haque S; Borini S; Avramovic V; Centeno A; Amaia Z; Happy H
    Nanoscale; 2016 Aug; 8(29):14097-103. PubMed ID: 27396243
    [TBL] [Abstract][Full Text] [Related]  

  • 12.
    Hsieh YL; Su WH; Huang CC; Su CY
    ACS Appl Mater Interfaces; 2020 Aug; 12(33):37375-37383. PubMed ID: 32700524
    [TBL] [Abstract][Full Text] [Related]  

  • 13. High-speed black phosphorus field-effect transistors approaching ballistic limit.
    Li X; Yu Z; Xiong X; Li T; Gao T; Wang R; Huang R; Wu Y
    Sci Adv; 2019 Jun; 5(6):eaau3194. PubMed ID: 31245534
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Radio Frequency Transistors and Circuits Based on CVD MoS2.
    Sanne A; Ghosh R; Rai A; Yogeesh MN; Shin SH; Sharma A; Jarvis K; Mathew L; Rao R; Akinwande D; Banerjee S
    Nano Lett; 2015 Aug; 15(8):5039-45. PubMed ID: 26134588
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Fabrication and transfer of flexible few-layers MoS2 thin film transistors to any arbitrary substrate.
    Salvatore GA; Münzenrieder N; Barraud C; Petti L; Zysset C; Büthe L; Ensslin K; Tröster G
    ACS Nano; 2013 Oct; 7(10):8809-15. PubMed ID: 23991756
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Radio Frequency Transistors Using Aligned Semiconducting Carbon Nanotubes with Current-Gain Cutoff Frequency and Maximum Oscillation Frequency Simultaneously Greater than 70 GHz.
    Cao Y; Brady GJ; Gui H; Rutherglen C; Arnold MS; Zhou C
    ACS Nano; 2016 Jul; 10(7):6782-90. PubMed ID: 27327074
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Carbon Nanotube Based Radio Frequency Transistors for K-Band Amplifiers.
    Zhou J; Liu L; Shi H; Zhu M; Cheng X; Ren L; Ding L; Peng LM; Zhang Z
    ACS Appl Mater Interfaces; 2021 Aug; 13(31):37475-37482. PubMed ID: 34340306
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers.
    Ra HS; Lee AY; Kwak DH; Jeong MH; Lee JS
    ACS Appl Mater Interfaces; 2018 Jan; 10(1):925-932. PubMed ID: 29256593
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer.
    Kumaresan Y; Pak Y; Lim N; Kim Y; Park MJ; Yoon SM; Youn HM; Lee H; Lee BH; Jung GY
    Sci Rep; 2016 Nov; 6():37764. PubMed ID: 27876893
    [TBL] [Abstract][Full Text] [Related]  

  • 20. High-Mobility Flexible Oxyselenide Thin-Film Transistors Prepared by a Solution-Assisted Method.
    Zhang C; Wu J; Sun Y; Tan C; Li T; Tu T; Zhang Y; Liang Y; Zhou X; Gao P; Peng H
    J Am Chem Soc; 2020 Feb; 142(6):2726-2731. PubMed ID: 31985227
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 11.