These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

195 related articles for article (PubMed ID: 26998550)

  • 1. Silver as Seed-Particle Material for GaAs Nanowires--Dictating Crystal Phase and Growth Direction by Substrate Orientation.
    Lindberg C; Whiticar A; Dick KA; Sköld N; Nygård J; Bolinsson J
    Nano Lett; 2016 Apr; 16(4):2181-8. PubMed ID: 26998550
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.
    Iqbal A; Beech JP; Anttu N; Pistol ME; Samuelson L; Borgström MT; Yartsev A
    Nanotechnology; 2013 Mar; 24(11):115706. PubMed ID: 23455456
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Why does wurtzite form in nanowires of III-V zinc blende semiconductors?
    Glas F; Harmand JC; Patriarche G
    Phys Rev Lett; 2007 Oct; 99(14):146101. PubMed ID: 17930689
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Simultaneous Growth of Pure Wurtzite and Zinc Blende Nanowires.
    Lehmann S; Wallentin J; Mårtensson EK; Ek M; Deppert K; Dick KA; Borgström MT
    Nano Lett; 2019 Apr; 19(4):2723-2730. PubMed ID: 30888174
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Sn-Seeded GaAs Nanowires as Self-Assembled Radial p-n Junctions.
    Sun R; Jacobsson D; Chen IJ; Nilsson M; Thelander C; Lehmann S; Dick KA
    Nano Lett; 2015 Jun; 15(6):3757-62. PubMed ID: 25989532
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Impact of nucleation conditions on diameter modulation of GaAs nanowires.
    Crawford SC; Ermez S; Haberfehlner G; Jones EJ; Gradečak S
    Nanotechnology; 2015 Jun; 26(22):225604. PubMed ID: 25969429
    [TBL] [Abstract][Full Text] [Related]  

  • 7. All zinc-blende GaAs/(Ga,Mn)As core-shell nanowires with ferromagnetic ordering.
    Yu X; Wang H; Pan D; Zhao J; Misuraca J; von Molnár S; Xiong P
    Nano Lett; 2013 Apr; 13(4):1572-7. PubMed ID: 23517546
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Engineering parallel and perpendicular polarized photoluminescence from a single semiconductor nanowire by crystal phase control.
    Ba Hoang T; Moses AF; Ahtapodov L; Zhou H; Dheeraj DL; van Helvoort AT; Fimland BO; Weman H
    Nano Lett; 2010 Aug; 10(8):2927-33. PubMed ID: 20604543
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Non-resonant Raman scattering of wurtzite GaAs and InP nanowires.
    Vainorius N; Lehmann S; Dick KA; Pistol ME
    Opt Express; 2020 Apr; 28(8):11016-11022. PubMed ID: 32403621
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Phase perfection in zinc Blende and Wurtzite III-V nanowires using basic growth parameters.
    Joyce HJ; Wong-Leung J; Gao Q; Tan HH; Jagadish C
    Nano Lett; 2010 Mar; 10(3):908-15. PubMed ID: 20131909
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Crystal structure tuning in GaAs nanowires using HCl.
    Jacobsson D; Lehmann S; Dick KA
    Nanoscale; 2014 Jul; 6(14):8257-64. PubMed ID: 24931099
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Polytypism in GaAs nanowires: determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction.
    Köhl M; Schroth P; Minkevich AA; Hornung JW; Dimakis E; Somaschini C; Geelhaar L; Aschenbrenner T; Lazarev S; Grigoriev D; Pietsch U; Baumbach T
    J Synchrotron Radiat; 2015 Jan; 22(1):67-75. PubMed ID: 25537590
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Catalyst orientation-induced growth of defect-free zinc-blende structured ⟨001̅⟩ InAs nanowires.
    Zhang Z; Zheng K; Lu ZY; Chen PP; Lu W; Zou J
    Nano Lett; 2015 Feb; 15(2):876-82. PubMed ID: 25580886
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition.
    Bao XY; Soci C; Susac D; Bratvold J; Aplin DP; Wei W; Chen CY; Dayeh SA; Kavanagh KL; Wang D
    Nano Lett; 2008 Nov; 8(11):3755-60. PubMed ID: 18954121
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Evidence for structural phase transitions induced by the triple phase line shift in self-catalyzed GaAs nanowires.
    Yu X; Wang H; Lu J; Zhao J; Misuraca J; Xiong P; von Molnár S
    Nano Lett; 2012 Oct; 12(10):5436-42. PubMed ID: 22984828
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111) substrate.
    Tomioka K; Kobayashi Y; Motohisa J; Hara S; Fukui T
    Nanotechnology; 2009 Apr; 20(14):145302. PubMed ID: 19420521
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Influence of substrate orientation on the structural quality of GaAs nanowires in molecular beam epitaxy.
    Zhang Z; Shi SX; Chen PP; Lu W; Zou J
    Nanotechnology; 2015 Jan; 26(25):255601. PubMed ID: 26024290
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy.
    Wang CY; Hong YC; Ko ZJ; Su YW; Huang JH
    Nanoscale Res Lett; 2017 Dec; 12(1):290. PubMed ID: 28438011
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Growth of dilute nitride GaAsN/GaAs heterostructure nanowires on Si substrates.
    Araki Y; Yamaguchi M; Ishikawa F
    Nanotechnology; 2013 Feb; 24(6):065601. PubMed ID: 23324475
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Demonstration of Sn-seeded GaSb homo- and GaAs-GaSb heterostructural nanowires.
    Tornberg M; Mårtensson EK; Zamani RR; Lehmann S; Dick KA; Ghalamestani SG
    Nanotechnology; 2016 Apr; 27(17):175602. PubMed ID: 26984940
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.