210 related articles for article (PubMed ID: 27041669)
41. Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy.
Griffiths IJ; Cherns D; Albert S; Bengoechea-Encabo A; Angel Sanchez M; Calleja E; Schimpke T; Strassburg M
J Microsc; 2016 May; 262(2):167-70. PubMed ID: 26366483
[TBL] [Abstract][Full Text] [Related]
42. Correlation of Optical, Structural, and Compositional Properties with V-Pit Distribution in InGaN/GaN Multiquantum Wells.
Zoellner MH; Chahine GA; Lahourcade L; Mounir C; Manganelli CL; Schülli TU; Schwarz UT; Zeisel R; Schroeder T
ACS Appl Mater Interfaces; 2019 Jun; 11(25):22834-22839. PubMed ID: 31142109
[TBL] [Abstract][Full Text] [Related]
43. Ultrafast Exciton Dynamics in InGaN/GaN and Rh/Cr2O3 Nanoparticle-Decorated InGaN/GaN Nanowires.
Pu YC; Kibria MG; Mi Z; Zhang JZ
J Phys Chem Lett; 2015 Jul; 6(13):2649-56. PubMed ID: 26266748
[TBL] [Abstract][Full Text] [Related]
44. Local structure of uncapped and capped InGaN/GaN quantum dots.
Piskorska-Hommel E; Schmidt T; Siebert M; Yamaguchi T; Hommel D; Falta J; Cross JO
J Synchrotron Radiat; 2009 Jul; 16(Pt 4):494-7. PubMed ID: 19535863
[TBL] [Abstract][Full Text] [Related]
45. Current path in light emitting diodes based on nanowire ensembles.
Limbach F; Hauswald C; Lähnemann J; Wölz M; Brandt O; Trampert A; Hanke M; Jahn U; Calarco R; Geelhaar L; Riechert H
Nanotechnology; 2012 Nov; 23(46):465301. PubMed ID: 23092897
[TBL] [Abstract][Full Text] [Related]
46. Photoluminescence polarization in strained GaN/AlGaN core/shell nanowires.
Jacopin G; Rigutti L; Bellei S; Lavenus P; Julien FH; Davydov AV; Tsvetkov D; Bertness KA; Sanford NA; Schlager JB; Tchernycheva M
Nanotechnology; 2012 Aug; 23(32):325701. PubMed ID: 22802219
[TBL] [Abstract][Full Text] [Related]
47. Elemental Distribution and Structural Characterization of GaN/InGaN Core-Shell Single Nanowires by Hard X-ray Synchrotron Nanoprobes.
Secco E; Mengistu HT; Segura-Ruíz J; Martínez-Criado G; García-Cristóbal A; Cantarero A; Foltynski B; Behmenburg H; Giesen C; Heuken M; Garro N
Nanomaterials (Basel); 2019 May; 9(5):. PubMed ID: 31058842
[TBL] [Abstract][Full Text] [Related]
48. Vertically aligned InGaN nanowires with engineered axial In composition for highly efficient visible light emission.
Ebaid M; Kang JH; Yoo YS; Lim SH; Cho YH; Ryu SW
Sci Rep; 2015 Nov; 5():17003. PubMed ID: 26585509
[TBL] [Abstract][Full Text] [Related]
49. High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires.
Jegenyes N; Morassi M; Chrétien P; Travers L; Lu L; Julien FH; Tchernycheva M; Houzé F; Gogneau N
Nanomaterials (Basel); 2018 May; 8(6):. PubMed ID: 29799440
[TBL] [Abstract][Full Text] [Related]
50. Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers.
Qian F; Li Y; Gradecak S; Park HG; Dong Y; Ding Y; Wang ZL; Lieber CM
Nat Mater; 2008 Sep; 7(9):701-6. PubMed ID: 18711385
[TBL] [Abstract][Full Text] [Related]
51. Opposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs. polar InGaN/GaN based quantum heterostructures.
Sari E; Nizamoglu S; Choi JH; Lee SJ; Baik KH; Lee IH; Baek JH; Hwang SM; Demir HV
Opt Express; 2011 Mar; 19(6):5442-50. PubMed ID: 21445183
[TBL] [Abstract][Full Text] [Related]
52. Gallium nitride heterostructures on 3D structured silicon.
Fündling S; Sökmen U; Peiner E; Weimann T; Hinze P; Jahn U; Trampert A; Riechert H; Bakin A; Wehmann HH; Waag A
Nanotechnology; 2008 Oct; 19(40):405301. PubMed ID: 21832611
[TBL] [Abstract][Full Text] [Related]
53. Monodisperse (In, Ga)N insertions in catalyst-free-grown GaN(0001) nanowires.
Knelangen M; Hanke M; Luna E; Schrottke L; Brandt O; Trampert A
Nanotechnology; 2011 Sep; 22(36):365703. PubMed ID: 21836335
[TBL] [Abstract][Full Text] [Related]
54. Circumventing the miscibility gap in InGaN nanowires emitting from blue to red.
Roche E; André Y; Avit G; Bougerol C; Castelluci D; Réveret F; Gil E; Médard F; Leymarie J; Jean T; Dubrovskii VG; Trassoudaine A
Nanotechnology; 2018 Nov; 29(46):465602. PubMed ID: 30160245
[TBL] [Abstract][Full Text] [Related]
55. Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers.
Olszewski K; Sobanska M; Dubrovskii VG; Leshchenko ED; Wierzbicka A; Zytkiewicz ZR
Nanomaterials (Basel); 2023 Sep; 13(18):. PubMed ID: 37764616
[TBL] [Abstract][Full Text] [Related]
56. Study of surface morphology control and investigation of hexagonal indium nitride nanorods grown on GaN/sapphire substrate.
Kuo SY; Chen WC; Lai FI; Lin WT; Wang HY; Hsiao CN
J Nanosci Nanotechnol; 2012 Feb; 12(2):1620-3. PubMed ID: 22630014
[TBL] [Abstract][Full Text] [Related]
57. Anisotropic Piezoelectric Response from InGaN Nanowires with Spatially Modulated Composition and Topography over a Textured Si(100) Substrate.
Wang P; Song C; Wang X; Chen H; Qian Y; Rao L; Zhou G; Nötzel R
ACS Appl Mater Interfaces; 2021 Feb; 13(6):7517-7528. PubMed ID: 33538580
[TBL] [Abstract][Full Text] [Related]
58. Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE.
Chen WC; Kuo SY; Wang WL; Tian JS; Lin WT; Lai FI; Chang L
Nanoscale Res Lett; 2012 Aug; 7(1):468. PubMed ID: 22908859
[TBL] [Abstract][Full Text] [Related]
59. Structural and electrical characterization of monolithic core-double shell n-GaN/Al/p-AlGaN nanowire heterostructures grown by molecular beam epitaxy.
Sadaf SM; Ra YH; Zhao S; Szkopek T; Mi Z
Nanoscale; 2019 Mar; 11(9):3888-3895. PubMed ID: 30758042
[TBL] [Abstract][Full Text] [Related]
60. The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs.
Grabowski M; Grzanka E; Grzanka S; Lachowski A; Smalc-Koziorowska J; Czernecki R; Hrytsak R; Moneta J; Gawlik G; Turos A; Leszczyński M
Sci Rep; 2021 Jan; 11(1):2458. PubMed ID: 33510188
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
