These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

210 related articles for article (PubMed ID: 27041669)

  • 61. Nanoscopic Insights into InGaN/GaN Core-Shell Nanorods: Structure, Composition, and Luminescence.
    Müller M; Veit P; Krause FF; Schimpke T; Metzner S; Bertram F; Mehrtens T; Müller-Caspary K; Avramescu A; Strassburg M; Rosenauer A; Christen J
    Nano Lett; 2016 Sep; 16(9):5340-6. PubMed ID: 27517307
    [TBL] [Abstract][Full Text] [Related]  

  • 62. Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires.
    You G; Liu J; Jiang Z; Wang L; El-Masry NA; Hosalli AM; Bedair SM; Xu J
    Opt Lett; 2014 Mar; 39(6):1501-4. PubMed ID: 24690823
    [TBL] [Abstract][Full Text] [Related]  

  • 63. Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation.
    Hwang JS; Liu TY; Chattopadhyay S; Hsu GM; Basilio AM; Chen HW; Hsu YK; Tu WH; Lin YG; Chen KH; Li CC; Wang SB; Chen HY; Chen LC
    Nanotechnology; 2013 Feb; 24(5):055401. PubMed ID: 23324138
    [TBL] [Abstract][Full Text] [Related]  

  • 64. Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy.
    Schuster F; Hetzl M; Weiszer S; Garrido JA; de la Mata M; Magen C; Arbiol J; Stutzmann M
    Nano Lett; 2015 Mar; 15(3):1773-9. PubMed ID: 25633130
    [TBL] [Abstract][Full Text] [Related]  

  • 65. Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires.
    Kong X; Albert S; Bengoechea-Encabo A; Sanchez-Garcia MA; Calleja E; Trampert A
    Nanotechnology; 2012 Dec; 23(48):485701. PubMed ID: 23123435
    [TBL] [Abstract][Full Text] [Related]  

  • 66. Nano-Cathodoluminescence Measurement of Asymmetric Carrier Trapping and Radiative Recombination in GaN and InGaN Quantum Disks.
    Deitz JI; Sarwar ATMG; Carnevale SD; Grassman TJ; Myers RC; McComb DW
    Microsc Microanal; 2018 Apr; 24(2):93-98. PubMed ID: 29699596
    [TBL] [Abstract][Full Text] [Related]  

  • 67. Optical properties of GaN nanorods grown by molecular-beam epitaxy; dependence on growth time.
    Park CM; Park YS; Im H; Kang TW
    Nanotechnology; 2006 Feb; 17(4):952-5. PubMed ID: 21727365
    [TBL] [Abstract][Full Text] [Related]  

  • 68. Atomic Ordering in InGaN Alloys within Nanowire Heterostructures.
    Woo SY; Bugnet M; Nguyen HP; Mi Z; Botton GA
    Nano Lett; 2015 Oct; 15(10):6413-8. PubMed ID: 26348690
    [TBL] [Abstract][Full Text] [Related]  

  • 69. Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate.
    Wierzbicka A; Zytkiewicz ZR; Kret S; Borysiuk J; Dluzewski P; Sobanska M; Klosek K; Reszka A; Tchutchulashvili G; Cabaj A; Lusakowska E
    Nanotechnology; 2013 Jan; 24(3):035703. PubMed ID: 23262581
    [TBL] [Abstract][Full Text] [Related]  

  • 70. Investigation of GaN nanowires containing AlN/GaN multiple quantum discs by EBIC and CL techniques.
    Piazza V; Babichev AV; Mancini L; Morassi M; Quach P; Bayle F; Largeau L; Julien FH; Rale P; Collin S; Harmand JC; Gogneau N; Tchernycheva M
    Nanotechnology; 2019 May; 30(21):214006. PubMed ID: 30736025
    [TBL] [Abstract][Full Text] [Related]  

  • 71. Formation and nature of InGaN quantum dots in GaN nanowires.
    Deshpande S; Frost T; Yan L; Jahangir S; Hazari A; Liu X; Mirecki-Millunchick J; Mi Z; Bhattacharya P
    Nano Lett; 2015 Mar; 15(3):1647-53. PubMed ID: 25654749
    [TBL] [Abstract][Full Text] [Related]  

  • 72. Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni-Au bi-metal catalysts.
    Ha R; Kim SW; Choi HJ
    Nanoscale Res Lett; 2013 Jun; 8(1):299. PubMed ID: 23803283
    [TBL] [Abstract][Full Text] [Related]  

  • 73. Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy.
    Bolshakov AD; Mozharov AM; Sapunov GA; Shtrom IV; Sibirev NV; Fedorov VV; Ubyivovk EV; Tchernycheva M; Cirlin GE; Mukhin IS
    Beilstein J Nanotechnol; 2018; 9():146-154. PubMed ID: 29441260
    [TBL] [Abstract][Full Text] [Related]  

  • 74. Correlative analysis on InGaN/GaN nanowires: structural and optical properties of self-assembled short-period superlattices.
    Alonso-Orts M; Hötzel R; Grieb T; Auf der Maur M; Ries M; Nippert F; März B; Müller-Caspary K; Wagner MR; Rosenauer A; Eickhoff M
    Discov Nano; 2023 Mar; 18(1):27. PubMed ID: 36856901
    [TBL] [Abstract][Full Text] [Related]  

  • 75. Optical properties of GaN nanowires grown on chemical vapor deposited-graphene.
    Mancini L; Morassi M; Sinito C; Brandt O; Geelhaar L; Song HG; Cho YH; Guan N; Cavanna A; Njeim J; Madouri A; Barbier C; Largeau L; Babichev A; Julien FH; Travers L; Oehler F; Gogneau N; Harmand JC; Tchernycheva M
    Nanotechnology; 2019 May; 30(21):214005. PubMed ID: 30736031
    [TBL] [Abstract][Full Text] [Related]  

  • 76. Properties of uniform diameter InN nanowires obtained under Si doping.
    Gotschke T; Schäfer-Nolte EO; Caterino R; Limbach F; Stoica T; Sutter E; Jeganathan K; Calarco R
    Nanotechnology; 2011 Mar; 22(12):125704. PubMed ID: 21317500
    [TBL] [Abstract][Full Text] [Related]  

  • 77. Correlated optical and electrical analyses of inhomogeneous core/shell InGaN/GaN nanowire light emitting diodes.
    Zhang H; Piazza V; Neplokh V; Guan N; Bayle F; Collin S; Largeau L; Babichev A; Julien FH; Tchernycheva M
    Nanotechnology; 2021 Mar; 32(10):105202. PubMed ID: 33142273
    [TBL] [Abstract][Full Text] [Related]  

  • 78. Epitaxial growth of InN films by molecular-beam epitaxy using hydrazoic acid (HN3) as an efficient nitrogen source.
    Chen JT; Hsiao CL; Hsu HC; Wu CT; Yeh CL; Wei PC; Chen LC; Chen KH
    J Phys Chem A; 2007 Jul; 111(29):6755-9. PubMed ID: 17500542
    [TBL] [Abstract][Full Text] [Related]  

  • 79. Origin of the spectral red-shift and polarization patterns of self-assembled InGaN nanostructures on GaN nanowires.
    Ries M; Nippert F; März B; Alonso-Orts M; Grieb T; Hötzel R; Hille P; Emtenani P; Akinoglu EM; Speiser E; Plaickner J; Schörmann J; Auf der Maur M; Müller-Caspary K; Rosenauer A; Esser N; Eickhoff M; Wagner MR
    Nanoscale; 2023 Apr; 15(15):7077-7085. PubMed ID: 36987591
    [TBL] [Abstract][Full Text] [Related]  

  • 80. Complications in silane-assisted GaN nanowire growth.
    Jiang N; Ghosh S; Frentrup M; Fairclough SM; Loeto K; Kusch G; Oliver RA; Joyce HJ
    Nanoscale Adv; 2023 May; 5(9):2610-2620. PubMed ID: 37143793
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 11.