239 related articles for article (PubMed ID: 27152475)
1. Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam.
Katagiri Y; Nakamura T; Ishii A; Ohata C; Hasegawa M; Katsumoto S; Cusati T; Fortunelli A; Iannaccone G; Fiori G; Roche S; Haruyama J
Nano Lett; 2016 Jun; 16(6):3788-94. PubMed ID: 27152475
[TBL] [Abstract][Full Text] [Related]
2. Improving Performances of In-Plane Transition-Metal Dichalcogenide Schottky Barrier Field-Effect Transistors.
Fan ZQ; Jiang XW; Chen J; Luo JW
ACS Appl Mater Interfaces; 2018 Jun; 10(22):19271-19277. PubMed ID: 29737827
[TBL] [Abstract][Full Text] [Related]
3. MoS
Nourbakhsh A; Zubair A; Sajjad RN; Tavakkoli K G A; Chen W; Fang S; Ling X; Kong J; Dresselhaus MS; Kaxiras E; Berggren KK; Antoniadis D; Palacios T
Nano Lett; 2016 Dec; 16(12):7798-7806. PubMed ID: 27960446
[TBL] [Abstract][Full Text] [Related]
4. First principles studies on the electronic and contact properties of single layer 2H-MoS
Yu J; Xia CJ; Hu ZY; Sun JP; Hao XP; Wang LX; Fang QL
Phys Chem Chem Phys; 2022 Feb; 24(5):3289-3295. PubMed ID: 35048933
[TBL] [Abstract][Full Text] [Related]
5. Tunable Contact Types and Interfacial Electronic Properties in TaS
Zhu X; Jiang H; Zhang Y; Wang D; Fan L; Chen Y; Qu X; Yang L; Liu Y
Molecules; 2023 Jul; 28(14):. PubMed ID: 37513478
[TBL] [Abstract][Full Text] [Related]
6. Spatially resolved photoexcited charge-carrier dynamics in phase-engineered monolayer MoS2.
Yamaguchi H; Blancon JC; Kappera R; Lei S; Najmaei S; Mangum BD; Gupta G; Ajayan PM; Lou J; Chhowalla M; Crochet JJ; Mohite AD
ACS Nano; 2015 Jan; 9(1):840-9. PubMed ID: 25521210
[TBL] [Abstract][Full Text] [Related]
7. In pursuit of barrierless transition metal dichalcogenides lateral heterojunctions.
Aierken Y; Sevik C; Gülseren O; Peeters FM; Çakır D
Nanotechnology; 2018 Jul; 29(29):295202. PubMed ID: 29714168
[TBL] [Abstract][Full Text] [Related]
8. Electrical Transport Properties of Polymorphic MoS2.
Kim JS; Kim J; Zhao J; Kim S; Lee JH; Jin Y; Choi H; Moon BH; Bae JJ; Lee YH; Lim SC
ACS Nano; 2016 Aug; 10(8):7500-6. PubMed ID: 27399325
[TBL] [Abstract][Full Text] [Related]
9. Flexible Molybdenum Disulfide (MoS
Singh E; Singh P; Kim KS; Yeom GY; Nalwa HS
ACS Appl Mater Interfaces; 2019 Mar; 11(12):11061-11105. PubMed ID: 30830744
[TBL] [Abstract][Full Text] [Related]
10. MoTe
Ma R; Zhang H; Yoo Y; Degregorio ZP; Jin L; Golani P; Ghasemi Azadani J; Low T; Johns JE; Bendersky LA; Davydov AV; Koester SJ
ACS Nano; 2019 Jul; 13(7):8035-8046. PubMed ID: 31247141
[TBL] [Abstract][Full Text] [Related]
11. Piezoelectricity across 2D Phase Boundaries.
Puthirath AB; Zhang X; Krishnamoorthy A; Xu R; Samghabadi FS; Moore DC; Lai J; Zhang T; Sanchez DE; Zhang F; Glavin NR; Litvinov D; Vajtai R; Swaminathan V; Terrones M; Zhu H; Vashishta P; Ajayan PM
Adv Mater; 2022 Sep; 34(39):e2206425. PubMed ID: 35929436
[TBL] [Abstract][Full Text] [Related]
12. Low Contact Barrier in 2H/1T' MoTe
Zhang X; Jin Z; Wang L; Hachtel JA; Villarreal E; Wang Z; Ha T; Nakanishi Y; Tiwary CS; Lai J; Dong L; Yang J; Vajtai R; Ringe E; Idrobo JC; Yakobson BI; Lou J; Gambin V; Koltun R; Ajayan PM
ACS Appl Mater Interfaces; 2019 Apr; 11(13):12777-12785. PubMed ID: 30854848
[TBL] [Abstract][Full Text] [Related]
13. Observation of Gap Opening in 1T' Phase MoS
Xu H; Han D; Bao Y; Cheng F; Ding Z; Tan SJR; Loh KP
Nano Lett; 2018 Aug; 18(8):5085-5090. PubMed ID: 29998735
[TBL] [Abstract][Full Text] [Related]
14. Epitaxial Synthesis of Molybdenum Carbide and Formation of a Mo
Jeon J; Park Y; Choi S; Lee J; Lim SS; Lee BH; Song YJ; Cho JH; Jang YH; Lee S
ACS Nano; 2018 Jan; 12(1):338-346. PubMed ID: 29298050
[TBL] [Abstract][Full Text] [Related]
15. Structural stability of coplanar 1T-2H superlattice MoS
Reshmi S; Akshaya MV; Satpati B; Basu PK; Bhattacharjee K
Nanotechnology; 2018 May; 29(20):205604. PubMed ID: 29498935
[TBL] [Abstract][Full Text] [Related]
16. Vertical and In-Plane Current Devices Using NbS
Shin HG; Yoon HS; Kim JS; Kim M; Lim JY; Yu S; Park JH; Yi Y; Kim T; Jun SC; Im S
Nano Lett; 2018 Mar; 18(3):1937-1945. PubMed ID: 29400979
[TBL] [Abstract][Full Text] [Related]
17. Terahertz Conductivity of Semiconducting 2H and Metallic 1T Phases of Molybdenum Disulfide.
Capobianco MD; Younan SM; Tayvah U; Pattengale B; Neu J; Gu J; Brudvig GW
J Phys Chem Lett; 2022 Sep; 13(35):8319-8326. PubMed ID: 36040312
[TBL] [Abstract][Full Text] [Related]
18. Reversible Semiconducting-to-Metallic Phase Transition in Chemical Vapor Deposition Grown Monolayer WSe2 and Applications for Devices.
Ma Y; Liu B; Zhang A; Chen L; Fathi M; Shen C; Abbas AN; Ge M; Mecklenburg M; Zhou C
ACS Nano; 2015 Jul; 9(7):7383-91. PubMed ID: 26125321
[TBL] [Abstract][Full Text] [Related]
19. Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS
Chee SS; Seo D; Kim H; Jang H; Lee S; Moon SP; Lee KH; Kim SW; Choi H; Ham MH
Adv Mater; 2019 Jan; 31(2):e1804422. PubMed ID: 30411825
[TBL] [Abstract][Full Text] [Related]
20. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors.
Kappera R; Voiry D; Yalcin SE; Branch B; Gupta G; Mohite AD; Chhowalla M
Nat Mater; 2014 Dec; 13(12):1128-34. PubMed ID: 25173581
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]