These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

178 related articles for article (PubMed ID: 27165155)

  • 1. Stress Characterization of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) using Raman Spectroscopy and the Finite Element Method.
    Yoshikawa M; Kosaka K; Seki H; Kimoto T
    Appl Spectrosc; 2016 Jul; 70(7):1209-13. PubMed ID: 27165155
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Stress Characterization of the Interface Between Thermal Oxide and the 4H-SiC Epitaxial Layer Using Near-Field Optical Raman Microscopy.
    Yoshikawa M; Fujita Y; Murakami M
    Appl Spectrosc; 2019 Oct; 73(10):1193-1200. PubMed ID: 31219330
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Characterization of silicon dioxide films on a 4H-SiC Si(0001) face by fourier transform infrared (FT-IR) spectroscopy and cathodoluminescence spectroscopy.
    Yoshikawa M; Seki H; Inoue K; Matsuda K; Tanahashi Y; Sako H; Nanen Y; Kato M; Kimoto T
    Appl Spectrosc; 2011 May; 65(5):543-8. PubMed ID: 21513598
    [TBL] [Abstract][Full Text] [Related]  

  • 4. 4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics.
    Na J; Cheon J; Kim K
    Materials (Basel); 2021 Jun; 14(13):. PubMed ID: 34202093
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET.
    Li H; Yu R; Zhong Y; Yao R; Liao X; Chen X
    Micromachines (Basel); 2019 May; 10(5):. PubMed ID: 31083371
    [TBL] [Abstract][Full Text] [Related]  

  • 6. The Impacts of Contact Etch Stop Layer Thickness and Gate Height on Channel Stress in Strained N-Metal Oxide Semiconductor Field Effect Transistors.
    Lin KC; Twu MJ; Deng RH; Liu CH
    J Nanosci Nanotechnol; 2015 Apr; 15(4):2673-9. PubMed ID: 26353480
    [TBL] [Abstract][Full Text] [Related]  

  • 7. TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode.
    Wang R; Guo J; Liu C; Wu H; Huang Z; Hu S
    Micromachines (Basel); 2022 Oct; 13(10):. PubMed ID: 36296094
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers.
    Pirnaci MD; Spitaleri L; Tenaglia D; Perricelli F; Fragalà ME; Bongiorno C; Gulino A
    ACS Omega; 2021 Aug; 6(31):20667-20675. PubMed ID: 34396012
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Finite-element study of strain field in strained-Si MOSFET.
    Liu HH; Duan XF; Xu QX
    Micron; 2009 Feb; 40(2):274-8. PubMed ID: 18996702
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate.
    Lee CC; Huang PC
    J Nanosci Nanotechnol; 2020 Feb; 20(2):760-768. PubMed ID: 31383071
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Characterization of Thermal Oxides on 4H-SiC Epitaxial Substrates Using Fourier-Transform Infrared Spectroscopy.
    Seki H; Yoshikawa M; Kobayashi T; Kimoto T; Ozaki Y
    Appl Spectrosc; 2017 May; 71(5):911-918. PubMed ID: 27407010
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Theoretical Study of Triboelectric-Potential Gated/Driven Metal-Oxide-Semiconductor Field-Effect Transistor.
    Peng W; Yu R; He Y; Wang ZL
    ACS Nano; 2016 Apr; 10(4):4395-402. PubMed ID: 27077327
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Characterization of Thermal Oxides on 4H Silicon Carbide (4H-SiC) Epitaxial Substrate Using Fourier Transform Infrared Spectroscopy.
    Yoshikawa M; Seki H; Inoue K; Kobayashi T; Kimoto T
    Appl Spectrosc; 2015 Sep; ():. PubMed ID: 26337495
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Investigation of the Young's Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates.
    Ben Messaoud J; Michaud JF; Certon D; Camarda M; Piluso N; Colin L; Barcella F; Alquier D
    Micromachines (Basel); 2019 Nov; 10(12):. PubMed ID: 31766525
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Electron trapping at SiO
    Fiorenza P; Iucolano F; Nicotra G; Bongiorno C; Deretzis I; La Magna A; Giannazzo F; Saggio M; Spinella C; Roccaforte F
    Nanotechnology; 2018 Sep; 29(39):395702. PubMed ID: 29972377
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Investigation of Positive Bias Temperature Instability Characteristics of Fully Depleted Silicon on Insulator Tunneling Field Effect Transistor with High-k Dielectric Gate Stacks.
    Song HS; Kim SY; Lim DH; Kwon SK; Choi CH; Lee GW; Lee HD
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6131-6134. PubMed ID: 31026922
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Characterization of inhomogeneity in silicon dioxide films on 4H-silicon carbide epitaxial substrate using a combination of Fourier transform infrared and cathodoluminescence spectroscopy.
    Yoshikawa M; Seki H; Inoue K; Nanen Y; Kimoto T
    Appl Spectrosc; 2014; 68(10):1176-80. PubMed ID: 25198339
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Optimal design of an electret microphone metal-oxide-semiconductor field-effect transistor preamplifier.
    van der Donk AG; Bergveld P
    J Acoust Soc Am; 1992 Apr; 91(4 Pt 1):2261-9. PubMed ID: 1597614
    [TBL] [Abstract][Full Text] [Related]  

  • 19. MOSFET-Embedded microcantilevers for measuring deflection in biomolecular sensors.
    Shekhawat G; Tark SH; Dravid VP
    Science; 2006 Mar; 311(5767):1592-5. PubMed ID: 16456038
    [TBL] [Abstract][Full Text] [Related]  

  • 20. FEM Simulation and Verification of Brazing SiC Ceramic with Novel Zr-Cu Filler Metal.
    Zhou B; Zeng Z; Cai Y; Feng K
    Materials (Basel); 2019 Oct; 12(20):. PubMed ID: 31623156
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.