These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
266 related articles for article (PubMed ID: 27166838)
21. Novel chemical route for atomic layer deposition of MoS₂ thin film on SiO₂/Si substrate. Jin Z; Shin S; Kwon DH; Han SJ; Min YS Nanoscale; 2014 Nov; 6(23):14453-8. PubMed ID: 25340905 [TBL] [Abstract][Full Text] [Related]
22. Direct fabrication of two-dimensional ReS Lv J; Liu L Nanotechnology; 2020 Jan; 31(5):055602. PubMed ID: 31622963 [TBL] [Abstract][Full Text] [Related]
24. High turnover frequency of hydrogen evolution reaction on amorphous MoS2 thin film directly grown by atomic layer deposition. Shin S; Jin Z; Kwon DH; Bose R; Min YS Langmuir; 2015 Jan; 31(3):1196-202. PubMed ID: 25547664 [TBL] [Abstract][Full Text] [Related]
25. Magnetic Properties of CoFe Pham CD; Chang J; Zurbuchen MA; Chang JP ACS Appl Mater Interfaces; 2017 Oct; 9(42):36980-36988. PubMed ID: 28925262 [TBL] [Abstract][Full Text] [Related]
26. Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method. Hussain S; Singh J; Vikraman D; Singh AK; Iqbal MZ; Khan MF; Kumar P; Choi DC; Song W; An KS; Eom J; Lee WG; Jung J Sci Rep; 2016 Aug; 6():30791. PubMed ID: 27492282 [TBL] [Abstract][Full Text] [Related]
27. Nucleation and growth mechanisms of Al Zhang H; Chiappe D; Meersschaut J; Conard T; Franquet A; Nuytten T; Mannarino M; Radu I; Vandervorst W; Delabie A J Chem Phys; 2017 Feb; 146(5):052810. PubMed ID: 28178804 [TBL] [Abstract][Full Text] [Related]
28. Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor. Lee Y; Lee J; Bark H; Oh IK; Ryu GH; Lee Z; Kim H; Cho JH; Ahn JH; Lee C Nanoscale; 2014 Mar; 6(5):2821-6. PubMed ID: 24469273 [TBL] [Abstract][Full Text] [Related]
29. Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS Price KM; Schauble KE; McGuire FA; Farmer DB; Franklin AD ACS Appl Mater Interfaces; 2017 Jul; 9(27):23072-23080. PubMed ID: 28653822 [TBL] [Abstract][Full Text] [Related]
30. Atomic layer deposition of SiO2 thin films using tetrakis(ethylamino)silane and ozone. Kim JK; Jin K; Jung J; Rha SK; Lee WJ J Nanosci Nanotechnol; 2012 Apr; 12(4):3589-92. PubMed ID: 22849174 [TBL] [Abstract][Full Text] [Related]
31. Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(N Song SJ; Park T; Yoon KJ; Yoon JH; Kwon DE; Noh W; Lansalot-Matras C; Gatineau S; Lee HK; Gautam S; Cho DY; Lee SW; Hwang CS ACS Appl Mater Interfaces; 2017 Jan; 9(1):537-547. PubMed ID: 27936581 [TBL] [Abstract][Full Text] [Related]
32. Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry. Mattinen M; Gity F; Coleman E; Vonk JFA; Verheijen MA; Duffy R; Kessels WMM; Bol AA Chem Mater; 2022 Aug; 34(16):7280-7292. PubMed ID: 36032554 [TBL] [Abstract][Full Text] [Related]
33. Nanotribological Properties of ALD-Made Ultrathin MoS Huang Y; Liu L; Yang J; Chen Y Langmuir; 2019 Mar; 35(10):3651-3657. PubMed ID: 30777760 [TBL] [Abstract][Full Text] [Related]
34. Wafer-scale and deterministic patterned growth of monolayer MoS Li S; Lin YC; Liu XY; Hu Z; Wu J; Nakajima H; Liu S; Okazaki T; Chen W; Minari T; Sakuma Y; Tsukagoshi K; Suenaga K; Taniguchi T; Osada M Nanoscale; 2019 Aug; 11(34):16122-16129. PubMed ID: 31433425 [TBL] [Abstract][Full Text] [Related]
35. Low-Temperature Phase-Controlled Synthesis of Titanium Di- and Tri-sulfide by Atomic Layer Deposition. Basuvalingam SB; Zhang Y; Bloodgood MA; Godiksen RH; Curto AG; Hofmann JP; Verheijen MA; Kessels WMM; Bol AA Chem Mater; 2019 Nov; 31(22):9354-9362. PubMed ID: 31806923 [TBL] [Abstract][Full Text] [Related]
36. Improved growth behavior of atomic-layer-deposited high-k dielectrics on multilayer MoS2 by oxygen plasma pretreatment. Yang J; Kim S; Choi W; Park SH; Jung Y; Cho MH; Kim H ACS Appl Mater Interfaces; 2013 Jun; 5(11):4739-44. PubMed ID: 23683268 [TBL] [Abstract][Full Text] [Related]
37. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Kang K; Xie S; Huang L; Han Y; Huang PY; Mak KF; Kim CJ; Muller D; Park J Nature; 2015 Apr; 520(7549):656-60. PubMed ID: 25925478 [TBL] [Abstract][Full Text] [Related]
38. Atomic layer deposited molybdenum nitride thin film: a promising anode material for Li ion batteries. Nandi DK; Sen UK; Choudhury D; Mitra S; Sarkar SK ACS Appl Mater Interfaces; 2014 May; 6(9):6606-15. PubMed ID: 24641277 [TBL] [Abstract][Full Text] [Related]
39. Wafer-scale monolayer MoS2 grown by chemical vapor deposition using a reaction of MoO3 and H2S. Kim Y; Bark H; Ryu GH; Lee Z; Lee C J Phys Condens Matter; 2016 May; 28(18):184002. PubMed ID: 27058779 [TBL] [Abstract][Full Text] [Related]
40. Microscopic evidence of strong interactions between chemical vapor deposited 2D MoS Sohn W; Kwon KC; Suh JM; Lee TH; Roh KC; Jang HW Nano Converg; 2021 Apr; 8(1):11. PubMed ID: 33834329 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]