These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
253 related articles for article (PubMed ID: 27168054)
1. Carbohydrate-Assisted Combustion Synthesis To Realize High-Performance Oxide Transistors. Wang B; Zeng L; Huang W; Melkonyan FS; Sheets WC; Chi L; Bedzyk MJ; Marks TJ; Facchetti A J Am Chem Soc; 2016 Jun; 138(22):7067-74. PubMed ID: 27168054 [TBL] [Abstract][Full Text] [Related]
2. Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture. Yu X; Zhou N; Smith J; Lin H; Stallings K; Yu J; Marks TJ; Facchetti A ACS Appl Mater Interfaces; 2013 Aug; 5(16):7983-8. PubMed ID: 23876148 [TBL] [Abstract][Full Text] [Related]
4. Spray-combustion synthesis: efficient solution route to high-performance oxide transistors. Yu X; Smith J; Zhou N; Zeng L; Guo P; Xia Y; Alvarez A; Aghion S; Lin H; Yu J; Chang RP; Bedzyk MJ; Ferragut R; Marks TJ; Facchetti A Proc Natl Acad Sci U S A; 2015 Mar; 112(11):3217-22. PubMed ID: 25733848 [TBL] [Abstract][Full Text] [Related]
5. Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors. Stallings K; Smith J; Chen Y; Zeng L; Wang B; Di Carlo G; Bedzyk MJ; Facchetti A; Marks TJ ACS Appl Mater Interfaces; 2021 Apr; 13(13):15399-15408. PubMed ID: 33779161 [TBL] [Abstract][Full Text] [Related]
6. Aqueous Solution Processing of Combustible Precursor Compounds into Amorphous Indium Gallium Zinc Oxide (IGZO) Semiconductors for Thin Film Transistor Applications. Sanctis S; Hoffmann RC; Koslowski N; Foro S; Bruns M; Schneider JJ Chem Asian J; 2018 Dec; 13(24):3912-3919. PubMed ID: 30426698 [TBL] [Abstract][Full Text] [Related]
7. Expeditious, scalable solution growth of metal oxide films by combustion blade coating for flexible electronics. Wang B; Guo P; Zeng L; Yu X; Sil A; Huang W; Leonardi MJ; Zhang X; Wang G; Lu S; Chen Z; Bedzyk MJ; Schaller RD; Marks TJ; Facchetti A Proc Natl Acad Sci U S A; 2019 May; 116(19):9230-9238. PubMed ID: 31004056 [TBL] [Abstract][Full Text] [Related]
8. All-amorphous-oxide transparent, flexible thin-film transistors. Efficacy of bilayer gate dielectrics. Liu J; Buchholz DB; Hennek JW; Chang RP; Facchetti A; Marks TJ J Am Chem Soc; 2010 Sep; 132(34):11934-42. PubMed ID: 20698566 [TBL] [Abstract][Full Text] [Related]
9. Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors. Avis C; Kim Y; Jang J Materials (Basel); 2019 Oct; 12(20):. PubMed ID: 31614961 [TBL] [Abstract][Full Text] [Related]
10. Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer. Zan HW; Yeh CC; Meng HF; Tsai CC; Chen LH Adv Mater; 2012 Jul; 24(26):3509-14. PubMed ID: 22678659 [TBL] [Abstract][Full Text] [Related]
11. Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature. Yu BS; Jeon JY; Kang BC; Lee W; Kim YH; Ha TJ Sci Rep; 2019 Jun; 9(1):8416. PubMed ID: 31182751 [TBL] [Abstract][Full Text] [Related]
12. Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide. Jin SH; Kang SK; Cho IT; Han SY; Chung HU; Lee DJ; Shin J; Baek GW; Kim TI; Lee JH; Rogers JA ACS Appl Mater Interfaces; 2015 Apr; 7(15):8268-74. PubMed ID: 25805699 [TBL] [Abstract][Full Text] [Related]
13. Self-aligned top-gate amorphous indium zinc oxide thin-film transistors exceeding low-temperature poly-Si transistor performance. Park JC; Lee HN; Im S ACS Appl Mater Interfaces; 2013 Aug; 5(15):6990-5. PubMed ID: 23823486 [TBL] [Abstract][Full Text] [Related]
14. UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors. Carlos E; Branquinho R; Kiazadeh A; Barquinha P; Martins R; Fortunato E ACS Appl Mater Interfaces; 2016 Nov; 8(45):31100-31108. PubMed ID: 27762536 [TBL] [Abstract][Full Text] [Related]
15. Low-temperature fabrication of an HfO Hong S; Park SP; Kim YG; Kang BH; Na JW; Kim HJ Sci Rep; 2017 Nov; 7(1):16265. PubMed ID: 29176568 [TBL] [Abstract][Full Text] [Related]
16. Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer. Shin KY; Tak YJ; Kim WG; Hong S; Kim HJ ACS Appl Mater Interfaces; 2017 Apr; 9(15):13278-13285. PubMed ID: 28299924 [TBL] [Abstract][Full Text] [Related]
17. High Mobility Flexible Amorphous IGZO Thin-Film Transistors with a Low Thermal Budget Ultra-Violet Pulsed Light Process. Benwadih M; Coppard R; Bonrad K; Klyszcz A; Vuillaume D ACS Appl Mater Interfaces; 2016 Dec; 8(50):34513-34519. PubMed ID: 27998139 [TBL] [Abstract][Full Text] [Related]
18. Aqueous combustion synthesis of aluminum oxide thin films and application as gate dielectric in GZTO solution-based TFTs. Branquinho R; Salgueiro D; Santos L; Barquinha P; Pereira L; Martins R; Fortunato E ACS Appl Mater Interfaces; 2014 Nov; 6(22):19592-9. PubMed ID: 25354332 [TBL] [Abstract][Full Text] [Related]
19. Negative gate bias and light illumination-induced hump in amorphous InGaZnO thin film transistor. Jeon JH; Seo SB; Park HS; Choe HH; Seo JH; Park KC; Park SH J Nanosci Nanotechnol; 2013 Nov; 13(11):7535-9. PubMed ID: 24245287 [TBL] [Abstract][Full Text] [Related]
20. Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor. Park JH; Yoo YB; Lee KH; Jang WS; Oh JY; Chae SS; Lee HW; Han SW; Baik HK ACS Appl Mater Interfaces; 2013 Aug; 5(16):8067-75. PubMed ID: 23883390 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]