These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
282 related articles for article (PubMed ID: 27181525)
1. Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance. Niu G; Calka P; Auf der Maur M; Santoni F; Guha S; Fraschke M; Hamoumou P; Gautier B; Perez E; Walczyk C; Wenger C; Di Carlo A; Alff L; Schroeder T Sci Rep; 2016 May; 6():25757. PubMed ID: 27181525 [TBL] [Abstract][Full Text] [Related]
2. Bipolar Resistive Switching Characteristics of HfO Zhang W; Kong JZ; Cao ZY; Li AD; Wang LG; Zhu L; Li X; Cao YQ; Wu D Nanoscale Res Lett; 2017 Dec; 12(1):393. PubMed ID: 28599512 [TBL] [Abstract][Full Text] [Related]
3. Effects of High-Pressure Hydrogen Annealing (HPHA) on Reliability Characteristics of RRAM. Song J; Lee D; Woo J; Cha E; Lee S; Hwang H J Nanosci Nanotechnol; 2016 May; 16(5):4758-61. PubMed ID: 27483819 [TBL] [Abstract][Full Text] [Related]
4. Optimization of Bilayer Resistive Random Access Memory Based on Ti/HfO Sun Z; Wang P; Li X; Chen L; Yang Y; Wang C Materials (Basel); 2024 Apr; 17(8):. PubMed ID: 38673209 [TBL] [Abstract][Full Text] [Related]
5. Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO Xu YD; Jiang YP; Tang XG; Liu QX; Tang Z; Li WH; Guo XB; Zhou YC Nanomaterials (Basel); 2022 Dec; 13(1):. PubMed ID: 36615949 [TBL] [Abstract][Full Text] [Related]
6. Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO Lin CY; Chen PH; Chang TC; Chang KC; Zhang SD; Tsai TM; Pan CH; Chen MC; Su YT; Tseng YT; Chang YF; Chen YC; Huang HC; Sze SM Nanoscale; 2017 Jun; 9(25):8586-8590. PubMed ID: 28636031 [TBL] [Abstract][Full Text] [Related]
7. Modelling of oxygen vacancy aggregates in monoclinic HfO2: can they contribute to conductive filament formation? Bradley SR; Bersuker G; Shluger AL J Phys Condens Matter; 2015 Oct; 27(41):415401. PubMed ID: 26414778 [TBL] [Abstract][Full Text] [Related]
8. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition. Niu G; Kim HD; Roelofs R; Perez E; Schubert MA; Zaumseil P; Costina I; Wenger C Sci Rep; 2016 Jun; 6():28155. PubMed ID: 27312225 [TBL] [Abstract][Full Text] [Related]
9. Improved Endurance and Resistive Switching Stability in Ceria Thin Films Due to Charge Transfer Ability of Al Dopant. Ismail M; Ahmed E; Rana AM; Hussain F; Talib I; Nadeem MY; Panda D; Shah NA ACS Appl Mater Interfaces; 2016 Mar; 8(9):6127-36. PubMed ID: 26881895 [TBL] [Abstract][Full Text] [Related]
10. Engineering synaptic characteristics of TaO Kim S; Abbas Y; Jeon YR; Sokolov AS; Ku B; Choi C Nanotechnology; 2018 Oct; 29(41):415204. PubMed ID: 30051887 [TBL] [Abstract][Full Text] [Related]
11. Low-Power Resistive Switching Characteristic in HfO Ding X; Feng Y; Huang P; Liu L; Kang J Nanoscale Res Lett; 2019 May; 14(1):157. PubMed ID: 31073774 [TBL] [Abstract][Full Text] [Related]
13. Modulating the resistive switching stability of HfO Zhang DL; Wang J; Wu Q; Du Y Phys Chem Chem Phys; 2023 Aug; 25(33):22388-22400. PubMed ID: 37581208 [TBL] [Abstract][Full Text] [Related]
14. Roles of conducting filament and non-filament regions in the Ta Park TH; Kim HJ; Park WY; Kim SG; Choi BJ; Hwang CS Nanoscale; 2017 May; 9(18):6010-6019. PubMed ID: 28443901 [TBL] [Abstract][Full Text] [Related]
15. Evolution of the conductive filament system in HfO Zhang Y; Mao GQ; Zhao X; Li Y; Zhang M; Wu Z; Wu W; Sun H; Guo Y; Wang L; Zhang X; Liu Q; Lv H; Xue KH; Xu G; Miao X; Long S; Liu M Nat Commun; 2021 Dec; 12(1):7232. PubMed ID: 34903752 [TBL] [Abstract][Full Text] [Related]
16. Filament Growth and Resistive Switching in Hafnium Oxide Memristive Devices. Dirkmann S; Kaiser J; Wenger C; Mussenbrock T ACS Appl Mater Interfaces; 2018 May; 10(17):14857-14868. PubMed ID: 29601180 [TBL] [Abstract][Full Text] [Related]
17. Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device. Zhang M; Long S; Li Y; Liu Q; Lv H; Miranda E; Suñé J; Liu M Nanoscale Res Lett; 2016 Dec; 11(1):269. PubMed ID: 27389343 [TBL] [Abstract][Full Text] [Related]
18. Reliable resistive switching of epitaxial single crystalline cubic Y-HfO Wang Y; Niu G; Wang Q; Roy S; Dai L; Wu H; Sun Y; Song S; Song Z; Xie YH; Ye ZG; Meng X; Ren W Nanotechnology; 2020 May; 31(20):205203. PubMed ID: 32018237 [TBL] [Abstract][Full Text] [Related]
19. Area-Selective Atomic Layer Deposition for Resistive Random-Access Memory Devices. Oh IK; Khan AI; Qin S; Lee Y; Wong HP; Pop E; Bent SF ACS Appl Mater Interfaces; 2023 Sep; 15(36):43087-43093. PubMed ID: 37656599 [TBL] [Abstract][Full Text] [Related]
20. Exploring the direction-dependency of conductive filament formation and oxygen vacancy migration behaviors in HfO Zhang D; Wang J; Wu Q; Du Y Phys Chem Chem Phys; 2023 Jan; 25(4):3521-3534. PubMed ID: 36637152 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]