These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
349 related articles for article (PubMed ID: 27203118)
41. Conversion of Charge Carrier Polarity in MoTe Kim H; Uddin I; Watanabe K; Taniguchi T; Whang D; Kim GH Nanomaterials (Basel); 2023 May; 13(10):. PubMed ID: 37242116 [TBL] [Abstract][Full Text] [Related]
42. Ambipolar MoS Giannazzo F; Fisichella G; Greco G; Di Franco S; Deretzis I; La Magna A; Bongiorno C; Nicotra G; Spinella C; Scopelliti M; Pignataro B; Agnello S; Roccaforte F ACS Appl Mater Interfaces; 2017 Jul; 9(27):23164-23174. PubMed ID: 28603968 [TBL] [Abstract][Full Text] [Related]
43. MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts. Chuang S; Battaglia C; Azcatl A; McDonnell S; Kang JS; Yin X; Tosun M; Kapadia R; Fang H; Wallace RM; Javey A Nano Lett; 2014 Mar; 14(3):1337-42. PubMed ID: 24568656 [TBL] [Abstract][Full Text] [Related]
44. Electrical Contacts in Monolayer Arsenene Devices. Wang Y; Ye M; Weng M; Li J; Zhang X; Zhang H; Guo Y; Pan Y; Xiao L; Liu J; Pan F; Lu J ACS Appl Mater Interfaces; 2017 Aug; 9(34):29273-29284. PubMed ID: 28783298 [TBL] [Abstract][Full Text] [Related]
45. Tuning Schottky barriers for monolayer GaSe FETs by exploiting a weak Fermi level pinning effect. Liu N; Zhou S; Gao N; Zhao J Phys Chem Chem Phys; 2018 Aug; 20(33):21732-21738. PubMed ID: 30105339 [TBL] [Abstract][Full Text] [Related]
46. Improved Contacts and Device Performance in MoS Andrews K; Bowman A; Rijal U; Chen PY; Zhou Z ACS Nano; 2020 May; 14(5):6232-6241. PubMed ID: 32320204 [TBL] [Abstract][Full Text] [Related]
47. MoTe Bae GY; Kim J; Kim J; Lee S; Lee E Nanomaterials (Basel); 2021 Oct; 11(11):. PubMed ID: 34835570 [TBL] [Abstract][Full Text] [Related]
48. 2D SnSe-based vdW heterojunctions: tuning the Schottky barrier by reducing Fermi level pinning. Zhou W; Guo Y; Liu J; Wang FQ; Li X; Wang Q Nanoscale; 2018 Jul; 10(28):13767-13772. PubMed ID: 29995035 [TBL] [Abstract][Full Text] [Related]
50. Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers. Liu H; Si M; Deng Y; Neal AT; Du Y; Najmaei S; Ajayan PM; Lou J; Ye PD ACS Nano; 2014 Jan; 8(1):1031-8. PubMed ID: 24351134 [TBL] [Abstract][Full Text] [Related]
51. In pursuit of barrierless transition metal dichalcogenides lateral heterojunctions. Aierken Y; Sevik C; Gülseren O; Peeters FM; Çakır D Nanotechnology; 2018 Jul; 29(29):295202. PubMed ID: 29714168 [TBL] [Abstract][Full Text] [Related]
52. Facile and Reversible Carrier-Type Manipulation of Layered MoTe Li M; Lin CY; Chang YM; Yang SH; Lee MP; Chen CF; Lee KC; Yang FS; Chou Y; Lin YC; Ueno K; Shi Y; Chou YC; Tsukagoshi K; Lin YF ACS Appl Mater Interfaces; 2020 Sep; 12(38):42918-42924. PubMed ID: 32864950 [TBL] [Abstract][Full Text] [Related]
54. Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS Kim J; Venkatesan A; Kim H; Kim Y; Whang D; Kim GH Adv Sci (Weinh); 2021 Jun; 8(11):e2100102. PubMed ID: 34105270 [TBL] [Abstract][Full Text] [Related]
55. Low-Temperature Solution Synthesis of Few-Layer 1T '-MoTe2 Nanostructures Exhibiting Lattice Compression. Sun Y; Wang Y; Sun D; Carvalho BR; Read CG; Lee CH; Lin Z; Fujisawa K; Robinson JA; Crespi VH; Terrones M; Schaak RE Angew Chem Int Ed Engl; 2016 Feb; 55(8):2830-4. PubMed ID: 26804980 [TBL] [Abstract][Full Text] [Related]
56. Control of polarity in multilayer MoTe Rani A; DiCamillo K; Krylyuk S; Debnath R; Taheri P; Paranjape M; Korman CE; Zaghloul ME; Davydov AV Proc SPIE Int Soc Opt Eng; 2018; 10725():. PubMed ID: 33304028 [TBL] [Abstract][Full Text] [Related]
57. Escalated Photocurrent with Excitation Energy in Dual-Gated MoTe Kim JS; Tran MD; Kim ST; Yoo D; Oh SH; Kim JH; Lee YH Nano Lett; 2021 Mar; 21(5):1976-1981. PubMed ID: 33591202 [TBL] [Abstract][Full Text] [Related]
59. Exploring charge transfer and schottky barrier modulation at monolayer Ge Wan X; Zhang C; Li J; Zhang Z; Wang Q; Wang H; Liu J; Zhong H J Phys Condens Matter; 2024 Sep; 36(50):. PubMed ID: 39241805 [TBL] [Abstract][Full Text] [Related]
60. Comparative Study on Electronic Structures of Sc and Ti Contacts with Monolayer and Multilayer MoS2. Li Z; Li X; Yang J ACS Appl Mater Interfaces; 2015 Jun; 7(23):12981-7. PubMed ID: 26018612 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]