These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

147 related articles for article (PubMed ID: 27219117)

  • 1. Large-Area Deposition of MoS2 by Pulsed Laser Deposition with In Situ Thickness Control.
    Serna MI; Yoo SH; Moreno S; Xi Y; Oviedo JP; Choi H; Alshareef HN; Kim MJ; Minary-Jolandan M; Quevedo-Lopez MA
    ACS Nano; 2016 Jun; 10(6):6054-61. PubMed ID: 27219117
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Pulsed laser-deposited MoS₂ thin films on W and Si: field emission and photoresponse studies.
    Late DJ; Shaikh PA; Khare R; Kashid RV; Chaudhary M; More MA; Ogale SB
    ACS Appl Mater Interfaces; 2014 Sep; 6(18):15881-8. PubMed ID: 25141299
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Wafer-Scale Integration of Highly Uniform and Scalable MoS
    Kim Y; Kim AR; Zhao G; Choi SY; Kang SC; Lim SK; Lee KE; Park J; Lee BH; Hahm MG; Kim DH; Yun J; Lee KH; Cho B
    ACS Appl Mater Interfaces; 2017 Oct; 9(42):37146-37153. PubMed ID: 28976735
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Growth, structure and stability of sputter-deposited MoS
    Kaindl R; Bayer BC; Resel R; Müller T; Skakalova V; Habler G; Abart R; Cherevan AS; Eder D; Blatter M; Fischer F; Meyer JC; Polyushkin DK; Waldhauser W
    Beilstein J Nanotechnol; 2017; 8():1115-1126. PubMed ID: 28685112
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS
    Kalanyan B; Kimes WA; Beams R; Stranick SJ; Garratt E; Kalish I; Davydov AV; Kanjolia RK; Maslar JE
    Chem Mater; 2017 Aug; 29(15):6279-6288. PubMed ID: 29545674
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Layer-controlled precise fabrication of ultrathin MoS
    Liu L; Huang Y; Sha J; Chen Y
    Nanotechnology; 2017 May; 28(19):195605. PubMed ID: 28323252
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films.
    Vangelista S; Cinquanta E; Martella C; Alia M; Longo M; Lamperti A; Mantovan R; Basset FB; Pezzoli F; Molle A
    Nanotechnology; 2016 Apr; 27(17):175703. PubMed ID: 26984949
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method.
    Hussain S; Singh J; Vikraman D; Singh AK; Iqbal MZ; Khan MF; Kumar P; Choi DC; Song W; An KS; Eom J; Lee WG; Jung J
    Sci Rep; 2016 Aug; 6():30791. PubMed ID: 27492282
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Synthesis and defect investigation of two-dimensional molybdenum disulfide atomic layers.
    Najmaei S; Yuan J; Zhang J; Ajayan P; Lou J
    Acc Chem Res; 2015 Jan; 48(1):31-40. PubMed ID: 25490347
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication.
    Wu CR; Chu TW; Chen KC; Lin SY
    J Vis Exp; 2017 Nov; (129):. PubMed ID: 29286451
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Highly Uniform Atomic Layer-Deposited MoS
    Nandi DK; Sahoo S; Sinha S; Yeo S; Kim H; Bulakhe RN; Heo J; Shim JJ; Kim SH
    ACS Appl Mater Interfaces; 2017 Nov; 9(46):40252-40264. PubMed ID: 29099166
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Scalable high-mobility MoS2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature.
    Huang CC; Al-Saab F; Wang Y; Ou JY; Walker JC; Wang S; Gholipour B; Simpson RE; Hewak DW
    Nanoscale; 2014 Nov; 6(21):12792-7. PubMed ID: 25226424
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Probing Interface Defects in Top-Gated MoS
    Zhao P; Azcatl A; Gomeniuk YY; Bolshakov P; Schmidt M; McDonnell SJ; Hinkle CL; Hurley PK; Wallace RM; Young CD
    ACS Appl Mater Interfaces; 2017 Jul; 9(28):24348-24356. PubMed ID: 28650155
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Layer-controlled CVD growth of large-area two-dimensional MoS2 films.
    Jeon J; Jang SK; Jeon SM; Yoo G; Jang YH; Park JH; Lee S
    Nanoscale; 2015 Feb; 7(5):1688-95. PubMed ID: 25385535
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Large-Area Growth of Uniform Single-Layer MoS2 Thin Films by Chemical Vapor Deposition.
    Baek SH; Choi Y; Choi W
    Nanoscale Res Lett; 2015 Dec; 10(1):388. PubMed ID: 26439617
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Top-Down Integration of Molybdenum Disulfide Transistors with Wafer-Scale Uniformity and Layer Controllability.
    Shi ML; Chen L; Zhang TB; Xu J; Zhu H; Sun QQ; Zhang DW
    Small; 2017 Sep; 13(35):. PubMed ID: 28639331
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Wafer-scale synthesis of thickness-controllable MoS2 films via solution-processing using a dimethylformamide/n-butylamine/2-aminoethanol solvent system.
    Yang J; Gu Y; Lee E; Lee H; Park SH; Cho MH; Kim YH; Kim YH; Kim H
    Nanoscale; 2015 May; 7(20):9311-9. PubMed ID: 25946575
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Recent Advances on Pulsed Laser Deposition of Large-Scale Thin Films.
    Yu J; Han W; Suleiman AA; Han S; Miao N; Ling FC
    Small Methods; 2024 Jul; 8(7):e2301282. PubMed ID: 38084465
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Scalable growth of high-quality polycrystalline MoS(2) monolayers on SiO(2) with tunable grain sizes.
    Zhang J; Yu H; Chen W; Tian X; Liu D; Cheng M; Xie G; Yang W; Yang R; Bai X; Shi D; Zhang G
    ACS Nano; 2014 Jun; 8(6):6024-30. PubMed ID: 24818518
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Wafer-scale production of highly uniform two-dimensional MoS
    Kim T; Mun J; Park H; Joung D; Diware M; Won C; Park J; Jeong SH; Kang SW
    Nanotechnology; 2017 May; 28(18):18LT01. PubMed ID: 28346218
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.