These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

233 related articles for article (PubMed ID: 27285177)

  • 1. Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope.
    Hieckmann E; Nacke M; Allardt M; Bodrov Y; Chekhonin P; Skrotzki W; Weber J
    J Vis Exp; 2016 May; (111):. PubMed ID: 27285177
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Direct assessment of recombination noise in semiconductors using electron beam-induced conductivity.
    Mil'shtein S
    Scanning; 2002; 24(3):136-9. PubMed ID: 12074494
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Application of nano-EBIC to the characterization of GaAs and InP homojunctions.
    Smaali K; Troyon M
    Nanotechnology; 2008 Apr; 19(15):155706. PubMed ID: 21825630
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices.
    Moldovan G; Kazemian P; Edwards PR; Ong VK; Kurniawan O; Humphreys CJ
    Ultramicroscopy; 2007; 107(4-5):382-9. PubMed ID: 17126490
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Localization and preparation of recombination-active extended defects for transmission electron microscopy analysis.
    Falkenberg MA; Schuhmann H; Seibt M; Radisch V
    Rev Sci Instrum; 2010 Jun; 81(6):063705. PubMed ID: 20590244
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Fabrication of Au/p-Si Schottky barrier for EBIC study.
    Zhang X; Joy D
    Microsc Res Tech; 1994 Sep; 29(1):47-53. PubMed ID: 8000084
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Unveiling Defect-Mediated Charge-Carrier Recombination at the Nanometer Scale in Polycrystalline Solar Cells.
    Yoon Y; Yang WD; Ha D; Haney PM; Hirsch D; Yoon HP; Sharma R; Zhitenev NB
    ACS Appl Mater Interfaces; 2019 Dec; 11(50):47037-47046. PubMed ID: 31747519
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Directly Linking Low-Angle Grain Boundary Misorientation to Device Functionality for GaAs Grown on Flexible Metal Substrates.
    Poplawsky JD; Dutta P; Guthrey H; Leonard D; Guo W; Kacharia M; Rathi M; Khatiwada D; Favela C; Sun S; Zhang C; Hubbard S; Selvamanickam V
    ACS Appl Mater Interfaces; 2020 Mar; 12(9):10664-10672. PubMed ID: 32040297
    [TBL] [Abstract][Full Text] [Related]  

  • 9. AgGaSe2 thin films grown by chemical close-spaced vapor transport for photovoltaic applications: structural, compositional and optical properties.
    Merschjann C; Mews M; Mete T; Karkatzinou A; Rusu M; Korzun BV; Schorr S; Schubert-Bischoff P; Seeger S; Schedel-Niedrig T; Lux-Steiner MC
    J Phys Condens Matter; 2012 May; 24(17):175801. PubMed ID: 22469870
    [TBL] [Abstract][Full Text] [Related]  

  • 10. n-Channel semiconductor materials design for organic complementary circuits.
    Usta H; Facchetti A; Marks TJ
    Acc Chem Res; 2011 Jul; 44(7):501-10. PubMed ID: 21615105
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Non-destructive characterization of extended crystalline defects in confined semiconductor device structures.
    Schulze A; Strakos L; Vystavel T; Loo R; Pacco A; Collaert N; Vandervorst W; Caymax M
    Nanoscale; 2018 Apr; 10(15):7058-7066. PubMed ID: 29616259
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Mapping the Origins of Luminescence in ZnO Nanowires by STEM-CL.
    Kennedy OW; White ER; Howkins A; Williams CK; Boyd IW; Warburton PA; Shaffer MSP
    J Phys Chem Lett; 2019 Feb; 10(3):386-392. PubMed ID: 30614706
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Scanning electron microscopy imaging of dislocations in bulk materials, using electron channeling contrast.
    Crimp MA
    Microsc Res Tech; 2006 May; 69(5):374-81. PubMed ID: 16646010
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Origin of visible and near-infrared photoluminescence from chemically etched Si nanowires decorated with arbitrarily shaped Si nanocrystals.
    Ghosh R; Giri PK; Imakita K; Fujii M
    Nanotechnology; 2014 Jan; 25(4):045703. PubMed ID: 24394591
    [TBL] [Abstract][Full Text] [Related]  

  • 15. The remote electron beam-induced current analysis of grain boundaries in semiconducting and semi-insulating materials.
    Holt DB
    Scanning; 2000; 22(1):28-51. PubMed ID: 10768387
    [TBL] [Abstract][Full Text] [Related]  

  • 16. High-resolution scanning near-field EBIC microscopy: application to the characterisation of a shallow ion implanted p+-n silicon junction.
    Smaali K; Fauré J; El Hdiy A; Troyon M
    Ultramicroscopy; 2008 May; 108(6):605-12. PubMed ID: 18053650
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Advanced semiconductor diagnosis by multidimensional electron-beam-induced current technique.
    Chen J; Yuan X; Sekiguchi T
    Scanning; 2008; 30(4):347-53. PubMed ID: 18615457
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Generating free charges by carrier multiplication in quantum dots for highly efficient photovoltaics.
    Ten Cate S; Sandeep CS; Liu Y; Law M; Kinge S; Houtepen AJ; Schins JM; Siebbeles LD
    Acc Chem Res; 2015 Feb; 48(2):174-81. PubMed ID: 25607377
    [TBL] [Abstract][Full Text] [Related]  

  • 19. CsSnI3: Semiconductor or metal? High electrical conductivity and strong near-infrared photoluminescence from a single material. High hole mobility and phase-transitions.
    Chung I; Song JH; Im J; Androulakis J; Malliakas CD; Li H; Freeman AJ; Kenney JT; Kanatzidis MG
    J Am Chem Soc; 2012 May; 134(20):8579-87. PubMed ID: 22578072
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Efficient methodology to correlate structural with optical properties of GaAs nanowires based on scanning electron microscopy.
    Lin WH; Jahn U; Küpers H; Luna E; Lewis RB; Geelhaar L; Brandt O
    Nanotechnology; 2017 Oct; 28(41):415703. PubMed ID: 28767046
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 12.