These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

124 related articles for article (PubMed ID: 27336742)

  • 21. Chemically Tuned p- and n-Type WSe
    Ji HG; Solís-Fernández P; Yoshimura D; Maruyama M; Endo T; Miyata Y; Okada S; Ago H
    Adv Mater; 2019 Oct; 31(42):e1903613. PubMed ID: 31475400
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Air-Stable n-Doping of WSe2 by Anion Vacancy Formation with Mild Plasma Treatment.
    Tosun M; Chan L; Amani M; Roy T; Ahn GH; Taheri P; Carraro C; Ager JW; Maboudian R; Javey A
    ACS Nano; 2016 Jul; 10(7):6853-60. PubMed ID: 27294286
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Negative electronic compressibility and tunable spin splitting in WSe2.
    Riley JM; Meevasana W; Bawden L; Asakawa M; Takayama T; Eknapakul T; Kim TK; Hoesch M; Mo SK; Takagi H; Sasagawa T; Bahramy MS; King PD
    Nat Nanotechnol; 2015 Dec; 10(12):1043-7. PubMed ID: 26389661
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Gate-Controlled WSe
    Müller MR; Salazar R; Fathipour S; Xu H; Kallis K; Künzelmann U; Seabaugh A; Appenzeller J; Knoch J
    Nanoscale Res Lett; 2016 Dec; 11(1):512. PubMed ID: 27878575
    [TBL] [Abstract][Full Text] [Related]  

  • 25. A tunable floating-base bipolar transistor based on a 2D material homojunction realized using a solid ionic dielectric material.
    Li J; Chen X; Xiao Y; Li S; Zhang G; Diao X; Yan H; Zhang Y
    Nanoscale; 2019 Nov; 11(46):22531-22538. PubMed ID: 31746898
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Alloyed 2D Metal-Semiconductor Atomic Layer Junctions.
    Kim AR; Kim Y; Nam J; Chung HS; Kim DJ; Kwon JD; Park SW; Park J; Choi SY; Lee BH; Park JH; Lee KH; Kim DH; Choi SM; Ajayan PM; Hahm MG; Cho B
    Nano Lett; 2016 Mar; 16(3):1890-5. PubMed ID: 26839956
    [TBL] [Abstract][Full Text] [Related]  

  • 27. A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors.
    Cho AJ; Park KC; Kwon JY
    Nanoscale Res Lett; 2015; 10():115. PubMed ID: 25852410
    [TBL] [Abstract][Full Text] [Related]  

  • 28. High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits.
    Yu L; Zubair A; Santos EJ; Zhang X; Lin Y; Zhang Y; Palacios T
    Nano Lett; 2015 Aug; 15(8):4928-34. PubMed ID: 26192468
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Plasma-Doped Si Nanosheets for Transistor and
    Lee J; Kwon J; Seo D; Na J; Park S; Lee HJ; Lee SW; Lee KY; Park TE; Choi HJ
    ACS Appl Mater Interfaces; 2019 Nov; 11(45):42512-42519. PubMed ID: 31633333
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction.
    Ross JS; Rivera P; Schaibley J; Lee-Wong E; Yu H; Taniguchi T; Watanabe K; Yan J; Mandrus D; Cobden D; Yao W; Xu X
    Nano Lett; 2017 Feb; 17(2):638-643. PubMed ID: 28006106
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Homogeneous 2D MoTe
    Chen J; Zhu J; Wang Q; Wan J; Liu R
    Small; 2020 Jul; 16(30):e2001428. PubMed ID: 32578379
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Observation of Switchable Photoresponse of a Monolayer WSe2-MoS2 Lateral Heterostructure via Photocurrent Spectral Atomic Force Microscopic Imaging.
    Son Y; Li MY; Cheng CC; Wei KH; Liu P; Wang QH; Li LJ; Strano MS
    Nano Lett; 2016 Jun; 16(6):3571-7. PubMed ID: 27120519
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Alloyed 2D Metal-Semiconductor Heterojunctions: Origin of Interface States Reduction and Schottky Barrier Lowering.
    Kim Y; Kim AR; Yang JH; Chang KE; Kwon JD; Choi SY; Park J; Lee KE; Kim DH; Choi SM; Lee KH; Lee BH; Hahm MG; Cho B
    Nano Lett; 2016 Sep; 16(9):5928-33. PubMed ID: 27552187
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Effect of Total Dose Irradiation on Parasitic BJT in 130 nm PDSOI MOSFETs.
    Jia Y; Zhang Z; Bi D; Hu Z; Zou S
    Micromachines (Basel); 2023 Aug; 14(9):. PubMed ID: 37763842
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Gate tunable WSe2-BP van der Waals heterojunction devices.
    Chen P; Zhang TT; zhang J; Xiang J; Yu H; Wu S; Lu X; Wang G; Wen F; Liu Z; Yang R; Shi D; Zhang G
    Nanoscale; 2016 Feb; 8(6):3254-8. PubMed ID: 26810387
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Barrier Formation at the Contacts of Vanadium Dioxide and Transition-Metal Dichalcogenides.
    Yamamoto M; Nouchi R; Kanki T; Nakaharai S; Hattori AN; Watanabe K; Taniguchi T; Wakayama Y; Ueno K; Tanaka H
    ACS Appl Mater Interfaces; 2019 Oct; 11(40):36871-36879. PubMed ID: 31525896
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Silicon Nanowire Phototransistor Arrays for CMOS Image Sensor Applications.
    Jun H; Choi J; Hwang J
    Sensors (Basel); 2023 Dec; 23(24):. PubMed ID: 38139671
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Design and characterization of a three-terminal transcriptional device through polymerase per second.
    Varadarajan PA; Del Vecchio D
    IEEE Trans Nanobioscience; 2009 Sep; 8(3):281-9. PubMed ID: 20051340
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Tuning Transition-Metal Dichalcogenide Field-Effect Transistors by Spontaneous Pattern Formation of an Ultrathin Molecular Dopant Film.
    Ichimiya H; Takinoue M; Fukui A; Miura K; Yoshimura T; Ashida A; Fujimura N; Kiriya D
    ACS Nano; 2018 Oct; 12(10):10123-10129. PubMed ID: 30216040
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Vertical bipolar charge plasma transistor with buried metal layer.
    Nadda K; Kumar MJ
    Sci Rep; 2015 Jan; 5():7860. PubMed ID: 25597295
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 7.