162 related articles for article (PubMed ID: 27346527)
1. Flexible GaN Light-Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots.
Chung K; Yoo H; Hyun JK; Oh H; Tchoe Y; Lee K; Baek H; Kim M; Yi GC
Adv Mater; 2016 Sep; 28(35):7688-94. PubMed ID: 27346527
[TBL] [Abstract][Full Text] [Related]
2. Single-crystalline GaN microdisk arrays grown on graphene for flexible micro-LED application.
Fabunmi TG; Lee S; Kim HI; Yoo D; Lee J; Kim I; Ali A; Jang D; Lee S; Lee C; Kim M; Yi GC
Nanotechnology; 2023 Dec; 35(8):. PubMed ID: 37988751
[TBL] [Abstract][Full Text] [Related]
3. Flexible and monolithically integrated multicolor light emitting diodes using morphology-controlled GaN microstructures grown on graphene films.
Lee K; Yoo D; Oh H; Yi GC
Sci Rep; 2020 Nov; 10(1):19677. PubMed ID: 33184325
[TBL] [Abstract][Full Text] [Related]
4. Dimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications.
Yoo D; Lee K; Tchoe Y; Guha P; Ali A; Saroj RK; Lee S; Islam ABMH; Kim M; Yi GC
Sci Rep; 2021 Sep; 11(1):17524. PubMed ID: 34471184
[TBL] [Abstract][Full Text] [Related]
5. Epitaxial GaN microdisk lasers grown on graphene microdots.
Baek H; Lee CH; Chung K; Yi GC
Nano Lett; 2013 Jun; 13(6):2782-5. PubMed ID: 23668916
[TBL] [Abstract][Full Text] [Related]
6. MQWs InGaN/GaN LED with embedded micro-mirror array in the epitaxial-lateral-overgrowth gallium nitride for light extraction enhancement.
Huang CY; Ku HM; Liao CZ; Chao S
Opt Express; 2010 May; 18(10):10674-84. PubMed ID: 20588920
[TBL] [Abstract][Full Text] [Related]
7. Monolithic Flexible Vertical GaN Light-Emitting Diodes for a Transparent Wireless Brain Optical Stimulator.
Lee HE; Choi J; Lee SH; Jeong M; Shin JH; Joe DJ; Kim D; Kim CW; Park JH; Lee JH; Kim D; Shin CS; Lee KJ
Adv Mater; 2018 Jul; 30(28):e1800649. PubMed ID: 29775490
[TBL] [Abstract][Full Text] [Related]
8. Improving the quality of GaN crystals by using graphene or hexagonal boron nitride nanosheets substrate.
Zhang L; Li X; Shao Y; Yu J; Wu Y; Hao X; Yin Z; Dai Y; Tian Y; Huo Q; Shen Y; Hua Z; Zhang B
ACS Appl Mater Interfaces; 2015 Mar; 7(8):4504-10. PubMed ID: 25665033
[TBL] [Abstract][Full Text] [Related]
9. Nano-scale SiO2 patterned n-type GaN substrate for 380 nm ultra violet light emitting diodes.
Jo MS; Seo HW; Tawfik WZ; Yang SB; Lee JJ; Ryu SW; Ha JS; Jeon SR; Cui H; Park SH; Lee JK
J Nanosci Nanotechnol; 2014 Aug; 14(8):6108-11. PubMed ID: 25936066
[TBL] [Abstract][Full Text] [Related]
10. High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask.
Cho CY; Kwon MK; Park IK; Hong SH; Kim JJ; Park SE; Kim ST; Park SJ
Opt Express; 2011 Jul; 19 Suppl 4():A943-8. PubMed ID: 21747565
[TBL] [Abstract][Full Text] [Related]
11. Fabrication, characterization and applications of flexible vertical InGaN micro-light emitting diode arrays.
Tian P; McKendry JJ; Gu E; Chen Z; Sun Y; Zhang G; Dawson MD; Liu R
Opt Express; 2016 Jan; 24(1):699-707. PubMed ID: 26832299
[TBL] [Abstract][Full Text] [Related]
12. GaN-based light-emitting diodes on graphene-coated flexible substrates.
Yang G; Jung Y; Cuervo CV; Ren F; Pearton SJ; Kim J
Opt Express; 2014 May; 22 Suppl 3():A812-7. PubMed ID: 24922388
[TBL] [Abstract][Full Text] [Related]
13. High-Quality Transferred GaN-Based Light-Emitting Diodes through Oxygen-Assisted Plasma Patterning of Graphene.
Jia Y; Ning J; Zhang J; Wang B; Yan C; Zeng Y; Wu H; Zhang Y; Shen X; Zhang C; Guo H; Wang D; Hao Y
ACS Appl Mater Interfaces; 2021 Jul; 13(27):32442-32449. PubMed ID: 34181386
[TBL] [Abstract][Full Text] [Related]
14. Efficient stress-relaxation in InGaN/GaN light-emitting diodes using carbon nanotubes.
Park AH; Seo TH; Chandramohan S; Lee GH; Min KH; Lee S; Kim MJ; Hwang YG; Suh EK
Nanoscale; 2015 Oct; 7(37):15099-105. PubMed ID: 26351123
[TBL] [Abstract][Full Text] [Related]
15. Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils.
Kim H; Ohta J; Ueno K; Kobayashi A; Morita M; Tokumoto Y; Fujioka H
Sci Rep; 2017 May; 7(1):2112. PubMed ID: 28522838
[TBL] [Abstract][Full Text] [Related]
16. Wafer-scale transfer route for top-down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique.
Yulianto N; Refino AD; Syring A; Majid N; Mariana S; Schnell P; Wahyuono RA; Triyana K; Meierhofer F; Daum W; Abdi FF; Voss T; Wasisto HS; Waag A
Microsyst Nanoeng; 2021; 7():32. PubMed ID: 34567746
[TBL] [Abstract][Full Text] [Related]
17. Hexagonal Boron Nitride as an Intermediate Layer for Gallium Nitride Epitaxial Growth in Near-Ultraviolet Light-Emitting Diodes.
Park AH; Seo TH
Materials (Basel); 2023 Nov; 16(22):. PubMed ID: 38005145
[TBL] [Abstract][Full Text] [Related]
18. Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).
Cho CY; Lee JB; Lee SJ; Han SH; Park TY; Kim JW; Kim YC; Park SJ
Opt Express; 2010 Jan; 18(2):1462-8. PubMed ID: 20173974
[TBL] [Abstract][Full Text] [Related]
19. UV light-emitting diodes grown on GaN templates with selective-area Si implantation.
Lee ML; Liao PH; Cheng HY; Yen WY; Sheu JK
Opt Express; 2020 Feb; 28(4):4674-4685. PubMed ID: 32121700
[TBL] [Abstract][Full Text] [Related]
20. Direct growth of GaN layer on carbon nanotube-graphene hybrid structure and its application for light emitting diodes.
Seo TH; Park AH; Park S; Kim YH; Lee GH; Kim MJ; Jeong MS; Lee YH; Hahn YB; Suh EK
Sci Rep; 2015 Jan; 5():7747. PubMed ID: 25597492
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
