These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
177 related articles for article (PubMed ID: 27351336)
21. Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates. Gas K; Sadowski J; Kasama T; Siusys A; Zaleszczyk W; Wojciechowski T; Morhange JF; Altintaş A; Xu HQ; Szuszkiewicz W Nanoscale; 2013 Aug; 5(16):7410-8. PubMed ID: 23832244 [TBL] [Abstract][Full Text] [Related]
22. Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy. Dong Z; André Y; Dubrovskii VG; Bougerol C; Leroux C; Ramdani MR; Monier G; Trassoudaine A; Castelluci D; Gil E Nanotechnology; 2017 Mar; 28(12):125602. PubMed ID: 28140362 [TBL] [Abstract][Full Text] [Related]
23. Detailed modeling of the epitaxial growth of GaAs nanowires. De Jong E; LaPierre RR; Wen JZ Nanotechnology; 2010 Jan; 21(4):045602. PubMed ID: 20009168 [TBL] [Abstract][Full Text] [Related]
24. Various Quantum- and Nano-Structures by III-V Droplet Epitaxy on GaAs Substrates. Lee J; Wang ZhM; Kim E; Kim N; Park Sh; Salamo G Nanoscale Res Lett; 2009 Nov; 5(2):308-14. PubMed ID: 20671787 [TBL] [Abstract][Full Text] [Related]
26. Si Doping of Vapor-Liquid-Solid GaAs Nanowires: n-Type or p-Type? Hijazi H; Monier G; Gil E; Trassoudaine A; Bougerol C; Leroux C; Castellucci D; Robert-Goumet C; Hoggan PE; André Y; Isik Goktas N; LaPierre RR; Dubrovskii VG Nano Lett; 2019 Jul; 19(7):4498-4504. PubMed ID: 31203632 [TBL] [Abstract][Full Text] [Related]
27. High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning. Plissard S; Larrieu G; Wallart X; Caroff P Nanotechnology; 2011 Jul; 22(27):275602. PubMed ID: 21597162 [TBL] [Abstract][Full Text] [Related]
28. Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires. Dubrovskii VG; Hijazi H Nanomaterials (Basel); 2020 Apr; 10(5):. PubMed ID: 32349326 [TBL] [Abstract][Full Text] [Related]
29. Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium. Kim H; Ren D; Farrell AC; Huffaker DL Nanotechnology; 2018 Feb; 29(8):085601. PubMed ID: 29300185 [TBL] [Abstract][Full Text] [Related]
30. Effect of Si(111) Surface Modification by Ga Focused Ion Beam at 30 kV on GaAs Nanowire Growth. Shandyba N; Balakirev S; Sharov V; Chernenko N; Kirichenko D; Solodovnik M Int J Mol Sci; 2022 Dec; 24(1):. PubMed ID: 36613671 [TBL] [Abstract][Full Text] [Related]
31. Impact of the Shadowing Effect on the Crystal Structure of Patterned Self-Catalyzed GaAs Nanowires. Schroth P; Al Humaidi M; Feigl L; Jakob J; Al Hassan A; Davtyan A; Küpers H; Tahraoui A; Geelhaar L; Pietsch U; Baumbach T Nano Lett; 2019 Jul; 19(7):4263-4271. PubMed ID: 31150261 [TBL] [Abstract][Full Text] [Related]
32. Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires. John P; Gómez Ruiz M; van Deurzen L; Lähnemann J; Trampert A; Geelhaar L; Brandt O; Auzelle T Nanotechnology; 2023 Sep; 34(46):. PubMed ID: 37579739 [TBL] [Abstract][Full Text] [Related]
35. Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs(1-x)Bi(x) films. Wood AW; Collar K; Li J; Brown AS; Babcock SE Nanotechnology; 2016 Mar; 27(11):115704. PubMed ID: 26876494 [TBL] [Abstract][Full Text] [Related]
36. Shape modification of III-V nanowires: the role of nucleation on sidewalls. Dubrovskii VG; Sibirev NV; Cirlin GE; Tchernycheva M; Harmand JC; Ustinov VM Phys Rev E Stat Nonlin Soft Matter Phys; 2008 Mar; 77(3 Pt 1):031606. PubMed ID: 18517394 [TBL] [Abstract][Full Text] [Related]
37. Record pure zincblende phase in GaAs nanowires down to 5 nm in radius. Gil E; Dubrovskii VG; Avit G; André Y; Leroux C; Lekhal K; Grecenkov J; Trassoudaine A; Castelluci D; Monier G; Ramdani RM; Robert-Goumet C; Bideux L; Harmand JC; Glas F Nano Lett; 2014 Jul; 14(7):3938-44. PubMed ID: 24873917 [TBL] [Abstract][Full Text] [Related]
38. A simple route to synchronized nucleation of self-catalyzed GaAs nanowires on silicon for sub-Poissonian length distributions. Tauchnitz T; Berdnikov Y; Dubrovskii VG; Schneider H; Helm M; Dimakis E Nanotechnology; 2018 Dec; 29(50):504004. PubMed ID: 30240362 [TBL] [Abstract][Full Text] [Related]
39. Low-Temperature In-Induced Holes Formation in Native-SiO R Reznik R; P Kotlyar K; O Gridchin V; V Ubyivovk E; V Federov V; I Khrebtov A; S Shevchuk D; E Cirlin G Materials (Basel); 2020 Aug; 13(16):. PubMed ID: 32764363 [TBL] [Abstract][Full Text] [Related]
40. Improving the yield of GaAs nanowires on silicon by Ga pre-deposition. Wilson DP; Dubrovskii VG; LaPierre RR Nanotechnology; 2021 Apr; 32(26):. PubMed ID: 33730697 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]