These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

84 related articles for article (PubMed ID: 27351723)

  • 1. Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask.
    Feng X; Yu T; Wei Y; Ji C; Cheng Y; Zong H; Wang K; Yang Z; Kang X; Zhang G; Fan S
    ACS Appl Mater Interfaces; 2016 Jul; 8(28):18208-14. PubMed ID: 27351723
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Coordinated stress management and dislocation control in GaN growth on Si (111) substrates by using a carbon nanotube mask.
    Wang K; Yu T; Wei Y; Li M; Zhang G; Fan S
    Nanoscale; 2019 Mar; 11(10):4489-4495. PubMed ID: 30806420
    [TBL] [Abstract][Full Text] [Related]  

  • 3. High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates.
    He C; Zhao W; Zhang K; He L; Wu H; Liu N; Zhang S; Liu X; Chen Z
    ACS Appl Mater Interfaces; 2017 Dec; 9(49):43386-43392. PubMed ID: 29164860
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned Mask.
    Ji Q; Li L; Zhang W; Wang J; Liu P; Xie Y; Yan T; Yang W; Chen W; Hu X
    ACS Appl Mater Interfaces; 2016 Aug; 8(33):21480-9. PubMed ID: 27484167
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Direct growth of GaN layer on carbon nanotube-graphene hybrid structure and its application for light emitting diodes.
    Seo TH; Park AH; Park S; Kim YH; Lee GH; Kim MJ; Jeong MS; Lee YH; Hahn YB; Suh EK
    Sci Rep; 2015 Jan; 5():7747. PubMed ID: 25597492
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.
    Shih HY; Shiojiri M; Chen CH; Yu SF; Ko CT; Yang JR; Lin RM; Chen MJ
    Sci Rep; 2015 Sep; 5():13671. PubMed ID: 26329829
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Fast Growth of GaN Epilayers via Laser-Assisted Metal-Organic Chemical Vapor Deposition for Ultraviolet Photodetector Applications.
    Rabiee Golgir H; Li DW; Keramatnejad K; Zou QM; Xiao J; Wang F; Jiang L; Silvain JF; Lu YF
    ACS Appl Mater Interfaces; 2017 Jun; 9(25):21539-21547. PubMed ID: 28574714
    [TBL] [Abstract][Full Text] [Related]  

  • 8. High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask.
    Cho CY; Kwon MK; Park IK; Hong SH; Kim JJ; Park SE; Kim ST; Park SJ
    Opt Express; 2011 Jul; 19 Suppl 4():A943-8. PubMed ID: 21747565
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Improving the quality of GaN crystals by using graphene or hexagonal boron nitride nanosheets substrate.
    Zhang L; Li X; Shao Y; Yu J; Wu Y; Hao X; Yin Z; Dai Y; Tian Y; Huo Q; Shen Y; Hua Z; Zhang B
    ACS Appl Mater Interfaces; 2015 Mar; 7(8):4504-10. PubMed ID: 25665033
    [TBL] [Abstract][Full Text] [Related]  

  • 10. High quality N-polar GaN films grown with varied V/III ratios by metal-organic vapor phase epitaxy.
    Li C; Zhang K; Qiaoyu Zeng ; Yin X; Ge X; Wang J; Wang Q; He C; Zhao W; Chen Z
    RSC Adv; 2020 Nov; 10(70):43187-43192. PubMed ID: 35514894
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Improved light extraction efficiency in GaN-based light emitting diode by nano-scale roughening of p-GaN surface.
    Park SJ; Sadasivam KG; Chung TH; Hong GC; Kim JB; Kim SM; Park SH; Jeon SR; Lee JK
    J Nanosci Nanotechnol; 2008 Oct; 8(10):5393-7. PubMed ID: 19198463
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy.
    Wei T; Yang J; Wei Y; Huo Z; Ji X; Zhang Y; Wang J; Li J; Fan S
    Sci Rep; 2016 Jun; 6():28620. PubMed ID: 27340030
    [TBL] [Abstract][Full Text] [Related]  

  • 13. An improvement of light extraction efficiency for GaN-based light emitting diodes by selective etched nanorods in periodic microholes.
    Kim SH; Park HH; Song YH; Park HJ; Kim JB; Jeon SR; Jeong H; Jeong MS; Yang GM
    Opt Express; 2013 Mar; 21(6):7125-30. PubMed ID: 23546094
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Self-Assembled UV Photodetector Made by Direct Epitaxial GaN Growth on Graphene.
    Journot T; Bouchiat V; Gayral B; Dijon J; Hyot B
    ACS Appl Mater Interfaces; 2018 Jun; 10(22):18857-18862. PubMed ID: 29745232
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Effects of the surface stoichiometry of seeds on GaN layer growth by hydride vapour phase epitaxy.
    Wang B; Zhao ZD; Xu W; Sui YP; Yu GH
    Phys Chem Chem Phys; 2015 May; 17(17):11193-7. PubMed ID: 25827111
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy.
    Pozina G; Gubaydullin AR; Mitrofanov MI; Kaliteevski MA; Levitskii IV; Voznyuk GV; Tatarinov EE; Evtikhiev VP; Rodin SN; Kaliteevskiy VN; Chechurin LS
    Sci Rep; 2018 May; 8(1):7218. PubMed ID: 29740066
    [TBL] [Abstract][Full Text] [Related]  

  • 17. High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks.
    Chiu CH; Lin CC; Han HV; Liu CY; Chen YH; Lan YP; Yu P; Kuo HC; Lu TC; Wang SC; Chang CY
    Nanotechnology; 2012 Feb; 23(4):045303. PubMed ID: 22222308
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Structural and Electrical Characterization of 2" Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production.
    Key D; Letts E; Tsou CW; Ji MH; Bakhtiary-Noodeh M; Detchprohm T; Shen SC; Dupuis R; Hashimoto T
    Materials (Basel); 2019 Jun; 12(12):. PubMed ID: 31207922
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Quasi-2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light-Emitting Diodes.
    Chang H; Chen Z; Liu B; Yang S; Liang D; Dou Z; Zhang Y; Yan J; Liu Z; Zhang Z; Wang J; Li J; Liu Z; Gao P; Wei T
    Adv Sci (Weinh); 2020 Aug; 7(15):2001272. PubMed ID: 32775172
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Super-aligned carbon nanotubes patterned sapphire substrate to improve quantum efficiency of InGaN/GaN light-emitting diodes.
    Shan L; Wei T; Sun Y; Zhang Y; Zhen A; Xiong Z; Wei Y; Yuan G; Wang J; Li J
    Opt Express; 2015 Jul; 23(15):A957-65. PubMed ID: 26367696
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 5.