These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
147 related articles for article (PubMed ID: 27397949)
1. Silicon epitaxy on H-terminated Si (100) surfaces at 250 °C. Deng X; Namboodiri P; Li K; Wang X; Stan G; Myers AF; Cheng X; Li T; Silver RM Appl Surf Sci; 2016 Aug; 378():301-307. PubMed ID: 27397949 [TBL] [Abstract][Full Text] [Related]
7. In-plane epitaxial growth of silicon nanowires and junction formation on Si(100) substrates. Yu L; Xu M; Xu J; Xue Z; Fan Z; Picardi G; Fortuna F; Wang J; Xu J; Shi Y; Chen K; Roca i Cabarrocas P Nano Lett; 2014 Nov; 14(11):6469-74. PubMed ID: 25343717 [TBL] [Abstract][Full Text] [Related]
8. Controlling the Polarity of the Molecular Beam Epitaxy Grown In-Bi Atomic Film on the Si(111) Surface. Lin CY; Hsu CH; Huang YZ; Hsieh SC; Chen HD; Huang L; Huang ZQ; Chuang FC; Lin DS Sci Rep; 2019 Jan; 9(1):756. PubMed ID: 30679630 [TBL] [Abstract][Full Text] [Related]
9. Epitaxial growth of gold on H-Si(111): the determining role of hydrogen evolution. Prodhomme P; Warren S; Cortès R; Jurca HF; Maroun F; Allongue P Chemphyschem; 2010 Sep; 11(13):2992-3001. PubMed ID: 20726029 [TBL] [Abstract][Full Text] [Related]
10. The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructures. Rueß FJ; Oberbeck L; Goh KE; Butcher MJ; Gauja E; Hamilton AR; Simmons MY Nanotechnology; 2005 Oct; 16(10):2446-9. PubMed ID: 20818033 [TBL] [Abstract][Full Text] [Related]
11. Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD. Jung J; Son B; Kam B; Joh YS; Jeong W; Cho S; Lee WJ; Park S Materials (Basel); 2021 Jul; 14(13):. PubMed ID: 34279304 [TBL] [Abstract][Full Text] [Related]
12. Nanometer-Thick Gold on Silicon as a Proxy for Single-Crystal Gold for the Electrodeposition of Epitaxial Cuprous Oxide Thin Films. Switzer JA; Hill JC; Mahenderkar NK; Liu YC ACS Appl Mater Interfaces; 2016 Jun; 8(24):15828-37. PubMed ID: 27232100 [TBL] [Abstract][Full Text] [Related]
13. Atomically controlled processing in silicon-based CVD epitaxial growth. Murota J; Sakuraba M; Tillack B J Nanosci Nanotechnol; 2011 Sep; 11(9):8348-53. PubMed ID: 22097582 [TBL] [Abstract][Full Text] [Related]
14. Bottom-up growth of epitaxial graphene on 6H-SiC(0001). Huang H; Chen W; Chen S; Wee AT ACS Nano; 2008 Dec; 2(12):2513-8. PubMed ID: 19206286 [TBL] [Abstract][Full Text] [Related]
15. Self-assembled growth of MnSi~1.7 nanowires with a single orientation and a large aspect ratio on Si(110) surfaces. Zou ZQ; Li WC; Liu XY; Shi GM Nanoscale Res Lett; 2013 Jan; 8(1):45. PubMed ID: 23339353 [TBL] [Abstract][Full Text] [Related]
16. Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide. Laha A; Bugiel E; Jestremski M; Ranjith R; Fissel A; Osten HJ Nanotechnology; 2009 Nov; 20(47):475604. PubMed ID: 19875877 [TBL] [Abstract][Full Text] [Related]
17. Scanning tunneling microscopy of ethylated Si(111) surfaces prepared by a chlorination/alkylation process. Yu H; Webb LJ; Solares SD; Cao P; Goddard WA; Heath JR; Lewis NS J Phys Chem B; 2006 Nov; 110(47):23898-903. PubMed ID: 17125356 [TBL] [Abstract][Full Text] [Related]
18. Intercalation of Si between MoS van Bremen R; Yao Q; Banerjee S; Cakir D; Oncel N; Zandvliet HJW Beilstein J Nanotechnol; 2017; 8():1952-1960. PubMed ID: 29046843 [TBL] [Abstract][Full Text] [Related]
19. Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy. Chusovitin E; Dotsenko S; Chusovitina S; Goroshko D; Gutakovskii A; Subbotin E; Galkin K; Galkin N Nanomaterials (Basel); 2018 Nov; 8(12):. PubMed ID: 30487412 [TBL] [Abstract][Full Text] [Related]
20. Electrodeposited Epitaxial Cu(100) on Si(100) and Lift-Off of Single Crystal-like Cu(100) Foils. Hull CM; Switzer JA ACS Appl Mater Interfaces; 2018 Nov; 10(44):38596-38602. PubMed ID: 30335962 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]