These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

136 related articles for article (PubMed ID: 27483819)

  • 1. Effects of High-Pressure Hydrogen Annealing (HPHA) on Reliability Characteristics of RRAM.
    Song J; Lee D; Woo J; Cha E; Lee S; Hwang H
    J Nanosci Nanotechnol; 2016 May; 16(5):4758-61. PubMed ID: 27483819
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance.
    Niu G; Calka P; Auf der Maur M; Santoni F; Guha S; Fraschke M; Hamoumou P; Gautier B; Perez E; Walczyk C; Wenger C; Di Carlo A; Alff L; Schroeder T
    Sci Rep; 2016 May; 6():25757. PubMed ID: 27181525
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Improved resistive switching characteristics of a multi-stacked HfO
    Khera EA; Mahata C; Imran M; Niaz NA; Hussain F; Khalil RMA; Rasheed U; SungjunKim
    RSC Adv; 2022 Apr; 12(19):11649-11656. PubMed ID: 35432948
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Toward a Reliable Synaptic Simulation Using Al-Doped HfO
    Roy S; Niu G; Wang Q; Wang Y; Zhang Y; Wu H; Zhai S; Shi P; Song S; Song Z; Ye ZG; Wenger C; Schroeder T; Xie YH; Meng X; Luo W; Ren W
    ACS Appl Mater Interfaces; 2020 Mar; 12(9):10648-10656. PubMed ID: 32043352
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Low-Power Resistive Switching Characteristic in HfO
    Ding X; Feng Y; Huang P; Liu L; Kang J
    Nanoscale Res Lett; 2019 May; 14(1):157. PubMed ID: 31073774
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Roles of conducting filament and non-filament regions in the Ta
    Park TH; Kim HJ; Park WY; Kim SG; Choi BJ; Hwang CS
    Nanoscale; 2017 May; 9(18):6010-6019. PubMed ID: 28443901
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Conduction Mechanism and Improved Endurance in HfO
    Yuan FY; Deng N; Shih CC; Tseng YT; Chang TC; Chang KC; Wang MH; Chen WC; Zheng HX; Wu H; Qian H; Sze SM
    Nanoscale Res Lett; 2017 Oct; 12(1):574. PubMed ID: 29075921
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Defect-Engineered Electroforming-Free Analog HfO
    Kim GS; Song H; Lee YK; Kim JH; Kim W; Park TH; Kim HJ; Min Kim K; Hwang CS
    ACS Appl Mater Interfaces; 2019 Dec; 11(50):47063-47072. PubMed ID: 31741373
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Balancing the Source and Sink of Oxygen Vacancies for the Resistive Switching Memory.
    Park TH; Kwon YJ; Kim HJ; Woo HC; Kim GS; An CH; Kim Y; Kwon DE; Hwang CS
    ACS Appl Mater Interfaces; 2018 Jun; 10(25):21445-21450. PubMed ID: 29877075
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Engineering synaptic characteristics of TaO
    Kim S; Abbas Y; Jeon YR; Sokolov AS; Ku B; Choi C
    Nanotechnology; 2018 Oct; 29(41):415204. PubMed ID: 30051887
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Modelling of oxygen vacancy aggregates in monoclinic HfO2: can they contribute to conductive filament formation?
    Bradley SR; Bersuker G; Shluger AL
    J Phys Condens Matter; 2015 Oct; 27(41):415401. PubMed ID: 26414778
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide.
    Lee J; Yang K; Kwon JY; Kim JE; Han DI; Lee DH; Yoon JH; Park MH
    Nano Converg; 2023 Dec; 10(1):55. PubMed ID: 38038784
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Engineering of the chemical reactivity of the Ti/HfO₂ interface for RRAM: experiment and theory.
    Calka P; Sowinska M; Bertaud T; Walczyk D; Dabrowski J; Zaumseil P; Walczyk C; Gloskovskii A; Cartoixà X; Suñé J; Schroeder T
    ACS Appl Mater Interfaces; 2014 Apr; 6(7):5056-60. PubMed ID: 24625458
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Multiphase Reset Induced Reliable Dual-Mode Resistance Switching of the Ta/HfO
    Shin DH; Park H; Ghenzi N; Kim YR; Cheong S; Shim SK; Yim S; Park TW; Song H; Lee JK; Kim BS; Park T; Hwang CS
    ACS Appl Mater Interfaces; 2024 Apr; 16(13):16462-16473. PubMed ID: 38513155
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO
    Xu YD; Jiang YP; Tang XG; Liu QX; Tang Z; Li WH; Guo XB; Zhou YC
    Nanomaterials (Basel); 2022 Dec; 13(1):. PubMed ID: 36615949
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Eradicating negative-Set behavior of TiO
    Ismail M; Hashmi A; Rana AM; Kim S
    Nanotechnology; 2020 Aug; 31(32):325201. PubMed ID: 32316002
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Optimization of Bilayer Resistive Random Access Memory Based on Ti/HfO
    Sun Z; Wang P; Li X; Chen L; Yang Y; Wang C
    Materials (Basel); 2024 Apr; 17(8):. PubMed ID: 38673209
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Electron holography on HfO
    Niu G; Schubert MA; Sharath SU; Zaumseil P; Vogel S; Wenger C; Hildebrandt E; Bhupathi S; Perez E; Alff L; Lehmann M; Schroeder T; Niermann T
    Nanotechnology; 2017 May; 28(21):215702. PubMed ID: 28462907
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Tunable defect engineering of Mo/TiON electrode in angstrom-laminated HfO
    Wang SM; Liu CR; Chen YT; Lee SC; Tang YT
    Nanotechnology; 2024 Feb; 35(20):. PubMed ID: 38316042
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO
    Spassov D; Paskaleva A; Guziewicz E; Wozniak W; Stanchev T; Ivanov T; Wojewoda-Budka J; Janusz-Skuza M
    Materials (Basel); 2022 Sep; 15(18):. PubMed ID: 36143596
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.