These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

194 related articles for article (PubMed ID: 27483823)

  • 1. Fabrication and Characteristics of High Mobility InSnZnO Thin Film Transistors.
    Choi P; Lee J; Park H; Baek D; Lee J; Yi J; Kim S; Choi B
    J Nanosci Nanotechnol; 2016 May; 16(5):4788-91. PubMed ID: 27483823
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Electrical Properties and Reliability Analysis of Solution-Processed Indium Tin Zinc Oxide Thin Film Transistors with O2-Plasma Treatment.
    Ko SW; Kim SK; Kim JM; Cho JH; Park HS; Choi BD
    J Nanosci Nanotechnol; 2015 Oct; 15(10):7476-81. PubMed ID: 26726354
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering.
    Zhong W; Li G; Lan L; Li B; Chen R
    RSC Adv; 2018 Oct; 8(61):34817-34822. PubMed ID: 35547050
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Fabrication of solution-processed InSnZnO/ZrO2 thin film transistors.
    Hwang SM; Lee SM; Choi JH; Lim JH; Joo J
    J Nanosci Nanotechnol; 2013 Nov; 13(11):7774-8. PubMed ID: 24245332
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Thermal Dehydrogenation Impact on Positive Bias Stability of Amorphous InSnZnO Thin-Film Transistors.
    Lee S; Song YW; Park JM; Lee J; Ham W; Song MK; Namgung SD; Shin D; Kwon JY
    ACS Appl Mater Interfaces; 2024 Nov; 16(44):61169-61178. PubMed ID: 39012887
    [TBL] [Abstract][Full Text] [Related]  

  • 6. The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiO
    Park JH; Shin MH; Yi JS
    Nanomaterials (Basel); 2019 May; 9(5):. PubMed ID: 31121917
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Optimization of the Solution-Based Indium-Zinc Oxide/Zinc-Tin Oxide Channel Layer for Thin-Film Transistors.
    Lim K; Choi P; Kim S; Kim H; Kim M; Lee J; Hyeon Y; Koo K; Choi B
    J Nanosci Nanotechnol; 2018 Sep; 18(9):5913-5918. PubMed ID: 29677716
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors.
    Wang D; Furuta M; Tomai S; Yano K
    Nanomaterials (Basel); 2020 Sep; 10(9):. PubMed ID: 32916832
    [TBL] [Abstract][Full Text] [Related]  

  • 9. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.
    Park S; Bang S; Lee S; Park J; Ko Y; Jeon H
    J Nanosci Nanotechnol; 2011 Jul; 11(7):6029-33. PubMed ID: 22121652
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate.
    Han D; Zhang Y; Cong Y; Yu W; Zhang X; Wang Y
    Sci Rep; 2016 Dec; 6():38984. PubMed ID: 27941915
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Effect of Ta addition of co-sputtered amorphous tantalum indium zinc oxide thin film transistors with bias stability.
    Son DH; Kim DH; Park SN; Sung SJ; Kang JK
    J Nanosci Nanotechnol; 2014 Nov; 14(11):8163-6. PubMed ID: 25958492
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Influence of Oxygen Partial Pressure on Radio Frequency Magnetron Sputtered Amorphous InZnSnO Thin Film Transistors.
    Lestari AD; Putri M; Heo YW; Lee HY
    J Nanosci Nanotechnol; 2020 Jan; 20(1):252-256. PubMed ID: 31383163
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Corrugated Heterojunction Metal-Oxide Thin-Film Transistors with High Electron Mobility via Vertical Interface Manipulation.
    Lee M; Jo JW; Kim YJ; Choi S; Kwon SM; Jeon SP; Facchetti A; Kim YH; Park SK
    Adv Mater; 2018 Aug; ():e1804120. PubMed ID: 30152085
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y₂O₃ Gate Dielectric.
    Jauhari IM; Bak YG; Noviyana I; Putri MA; Lee JA; Heo YW; Lee HY
    J Nanosci Nanotechnol; 2021 Mar; 21(3):1748-1753. PubMed ID: 33404442
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Effect of the annealing ambient on the electrical characteristics of the amorphous InGaZnO thin film transistors.
    Huang YC; Yang PY; Huang HY; Wang SJ; Cheng HC
    J Nanosci Nanotechnol; 2012 Jul; 12(7):5625-30. PubMed ID: 22966622
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Engineering a Subnanometer Interface Tailoring Layer for Precise Hydrogen Incorporation and Defect Passivation for High-End Oxide Thin-Film Transistors.
    Ko JB; Cho SI; Park SK
    ACS Appl Mater Interfaces; 2023 Oct; 15(40):47799-47809. PubMed ID: 37769061
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Photobias instability of high performance solution processed amorphous zinc tin oxide transistors.
    Kim YJ; Yang BS; Oh S; Han SJ; Lee HW; Heo J; Jeong JK; Kim HJ
    ACS Appl Mater Interfaces; 2013 Apr; 5(8):3255-61. PubMed ID: 23540523
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Fabrication of Zinc Oxide-Based Thin-Film Transistors by Radio Frequency Sputtering for Ultraviolet Sensing Applications.
    Hsu MH; Chang SP; Chang SJ; Li CW; Li JY; Lin CC
    J Nanosci Nanotechnol; 2018 May; 18(5):3518-3522. PubMed ID: 29442860
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Effect of organic buffer layer in the electrical properties of amorphous-indium gallium zinc oxide thin film transistor.
    Wang JX; Hyung GW; Li ZH; Son SY; Kwon SJ; Kim YK; Cho ES
    J Nanosci Nanotechnol; 2012 Jul; 12(7):5644-7. PubMed ID: 22966625
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing.
    Kim SH; Cho WJ
    J Nanosci Nanotechnol; 2020 Aug; 20(8):4671-4677. PubMed ID: 32126639
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.