These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
194 related articles for article (PubMed ID: 27483823)
21. Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors. Li ZY; Song SM; Wang WX; Gong JH; Tong Y; Dai MJ; Lin SS; Yang TL; Sun H Nanotechnology; 2022 Oct; 34(2):. PubMed ID: 36219884 [TBL] [Abstract][Full Text] [Related]
22. Understanding the Role of Temperature and Drain Current Stress in InSnZnO TFTs with Various Active Layer Thicknesses. Wang D; Furuta M; Tomai S; Yano K Nanomaterials (Basel); 2020 Mar; 10(4):. PubMed ID: 32230775 [TBL] [Abstract][Full Text] [Related]
23. Multifunctional Oxygen Scavenger Layer for High-Performance Oxide Thin-Film Transistors with Low-Temperature Processing. Kim MS; Kim HT; Yoo H; Choi DH; Park JW; Kim TS; Lim JH; Kim HJ ACS Appl Mater Interfaces; 2021 Jul; 13(27):31816-31824. PubMed ID: 34180652 [TBL] [Abstract][Full Text] [Related]
24. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C. Kim WG; Tak YJ; Du Ahn B; Jung TS; Chung KB; Kim HJ Sci Rep; 2016 Mar; 6():23039. PubMed ID: 26972476 [TBL] [Abstract][Full Text] [Related]
25. Lowering the Trap-State Density of Transparent Amorphous Oxide Semiconductor-Based Thin Film Transistors Through Microwave Irradiation. Cho MH; Cho WJ J Nanosci Nanotechnol; 2020 Nov; 20(11):6920-6924. PubMed ID: 32604537 [TBL] [Abstract][Full Text] [Related]
26. Effect of an organic buffer layer on the stability of zinc oxide thin-film transistors. Lee HW; Hyung GW; Koo JR; Cho ES; Kwon SJ; Park JH; Kim YK J Nanosci Nanotechnol; 2014 Jul; 14(7):5070-4. PubMed ID: 24757982 [TBL] [Abstract][Full Text] [Related]
27. Damage-free back channel wet-etch process in amorphous indium-zinc-oxide thin-film transistors using a carbon-nanofilm barrier layer. Luo D; Zhao M; Xu M; Li M; Chen Z; Wang L; Zou J; Tao H; Wang L; Peng J ACS Appl Mater Interfaces; 2014 Jul; 6(14):11318-25. PubMed ID: 24969359 [TBL] [Abstract][Full Text] [Related]
28. Optically transparent thin-film transistors based on 2D multilayer MoS₂ and indium zinc oxide electrodes. Kwon J; Hong YK; Kwon HJ; Park YJ; Yoo B; Kim J; Grigoropoulos CP; Oh MS; Kim S Nanotechnology; 2015 Jan; 26(3):035202. PubMed ID: 25548952 [TBL] [Abstract][Full Text] [Related]
29. High-mobility InSnZnO Thin Film Transistors via Introducing Water Vapor Sputtering Gas. Li T; Liu X; Ren J; Hu P; Qian Y; Jin T; Sun J; Chen Z; Liang L; Cao H ACS Appl Mater Interfaces; 2024 Jun; 16(24):31237-31246. PubMed ID: 38842364 [TBL] [Abstract][Full Text] [Related]
30. Low-voltage operation of ZrO2-gated n-type thin-film transistors based on a channel formed by hybrid phases of SnO and SnO2. Chu HC; Shen YS; Hsieh CH; Huang JH; Wu YH ACS Appl Mater Interfaces; 2015 Jul; 7(28):15129-37. PubMed ID: 26148216 [TBL] [Abstract][Full Text] [Related]
31. Improvement in the Electrical Performance of Ge-Doped InZnO Thin-Film Transistor. Im YJ; Kim SJ; Shin JH; Ha SS; Park CH; Yi M J Nanosci Nanotechnol; 2015 Oct; 15(10):7537-41. PubMed ID: 26726366 [TBL] [Abstract][Full Text] [Related]
32. Improved Mobility and Bias Stability of Thin Film Transistors Using the Double-Layer a-InGaZnO/a-InGaZnO:N Channel. Yu H; Zhang L; Li XH; Xu HY; Liu YC J Nanosci Nanotechnol; 2016 Apr; 16(4):3659-63. PubMed ID: 27451684 [TBL] [Abstract][Full Text] [Related]
33. Influence of Oxygen Flow Rate on Channel Width Dependent Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors. Wu G; Sahoo AK Nanomaterials (Basel); 2020 Nov; 10(12):. PubMed ID: 33260908 [TBL] [Abstract][Full Text] [Related]
34. Modulating Cationic Ratios for High-Performance Transparent Solution-Processed Electronics. John RA; Nguyen AC; Chen Y; Shukla S; Chen S; Mathews N ACS Appl Mater Interfaces; 2016 Jan; 8(2):1139-46. PubMed ID: 26695104 [TBL] [Abstract][Full Text] [Related]
35. Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer. Shin KY; Tak YJ; Kim WG; Hong S; Kim HJ ACS Appl Mater Interfaces; 2017 Apr; 9(15):13278-13285. PubMed ID: 28299924 [TBL] [Abstract][Full Text] [Related]
36. Using KrF ELA to Improve Gate-Stacked LaAlO₃/ZrO₂ Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique. Wu CH; Chang KM; Chen YM; Huang BW; Zhang YX; Wang SJ J Nanosci Nanotechnol; 2018 Mar; 18(3):1917-1921. PubMed ID: 29448683 [TBL] [Abstract][Full Text] [Related]
37. High-Performance Indium Gallium Tin Oxide Transistors with an Al Choi CH; Kim T; Ueda S; Shiah YS; Hosono H; Kim J; Jeong JK ACS Appl Mater Interfaces; 2021 Jun; 13(24):28451-28461. PubMed ID: 34111928 [TBL] [Abstract][Full Text] [Related]
38. Effect of channel layer thickness on the performance of indium-zinc-tin oxide thin film transistors manufactured by inkjet printing. Avis C; Hwang HR; Jang J ACS Appl Mater Interfaces; 2014 Jul; 6(14):10941-5. PubMed ID: 24877653 [TBL] [Abstract][Full Text] [Related]
39. Electrical properties of magnesium incorporated zinc tin oxide thin film transistors by solution process. Jeon IY; Lee JY; Yoon DH J Nanosci Nanotechnol; 2013 Mar; 13(3):1741-5. PubMed ID: 23755583 [TBL] [Abstract][Full Text] [Related]
40. Hafnium Incorporation in InZnO Thin Film Transistors as a Carrier Suppressor. Lee D; Choi P; Park A; Jeon W; Choi D; Lee S; Choi B J Nanosci Nanotechnol; 2020 Nov; 20(11):6675-6678. PubMed ID: 32604495 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]