170 related articles for article (PubMed ID: 27483906)
1. Thermally Induced Tensile Strain of Epitaxial Ge Layers Grown by a Two-Step e-Beam Evaporation Process on Si Substrates.
Ki B; Kim KH; Kim H; Lee C; Cho YH; Oh J
J Nanosci Nanotechnol; 2016 May; 16(5):5239-42. PubMed ID: 27483906
[TBL] [Abstract][Full Text] [Related]
2. Interplay of strain and intermixing effects on direct-bandgap optical transition in strained Ge-on-Si under thermal annealing.
Lee C; Yoo YS; Ki B; Jang MH; Lim SH; Song HG; Cho JH; Oh J; Cho YH
Sci Rep; 2019 Aug; 9(1):11709. PubMed ID: 31406149
[TBL] [Abstract][Full Text] [Related]
3. Strain Modulation of Selectively and/or Globally Grown Ge Layers.
Du Y; Wang G; Miao Y; Xu B; Li B; Kong Z; Yu J; Zhao X; Lin H; Su J; Han J; Liu J; Dong Y; Wang W; Radamson HH
Nanomaterials (Basel); 2021 May; 11(6):. PubMed ID: 34071167
[TBL] [Abstract][Full Text] [Related]
4. Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices.
Clavel M; Saladukha D; Goley PS; Ochalski TJ; Murphy-Armando F; Bodnar RJ; Hudait MK
ACS Appl Mater Interfaces; 2015 Dec; 7(48):26470-81. PubMed ID: 26561963
[TBL] [Abstract][Full Text] [Related]
5. High-speed Ge/Si electro-absorption optical modulator in C-band operation wavelengths.
Fujikata J; Noguchi M; Kawashita K; Katamawari R; Takahashi S; Nishimura M; Ono H; Shimura D; Takahashi H; Yaegashi H; Nakamura T; Ishikawa Y
Opt Express; 2020 Oct; 28(22):33123-33134. PubMed ID: 33114981
[TBL] [Abstract][Full Text] [Related]
6. The Effects of Annealing Temperatures on Composition and Strain in Si
Abidin MSZ; Morshed T; Chikita H; Kinoshita Y; Muta S; Anisuzzaman M; Park JH; Matsumura R; Mahmood MR; Sadoh T; Hashim AM
Materials (Basel); 2014 Feb; 7(2):1409-1421. PubMed ID: 28788521
[TBL] [Abstract][Full Text] [Related]
7. Tensile-strained Ge/SiGe quantum-well photodetectors on silicon substrates with extended infrared response.
Chang GE; Chen SW; Cheng HH
Opt Express; 2016 Aug; 24(16):17562-71. PubMed ID: 27505727
[TBL] [Abstract][Full Text] [Related]
8. Enhanced direct-gap light emission from Si-capped n
Higashitarumizu N; Ishikawa Y
Opt Express; 2017 Sep; 25(18):21286-21300. PubMed ID: 29041428
[TBL] [Abstract][Full Text] [Related]
9. Shape and size distribution of molecular beam epitaxy grown self-assembled Ge islands on Si (001) substrates.
Singha RK; Das S; Das K; Majumdar S; Dhar A; Ray SK
J Nanosci Nanotechnol; 2008 Aug; 8(8):4101-5. PubMed ID: 19049183
[TBL] [Abstract][Full Text] [Related]
10. Tensilely Strained Ge Films on Si Substrates Created by Physical Vapor Deposition of Solid Sources.
Li YS; Nguyen J
Sci Rep; 2018 Nov; 8(1):16734. PubMed ID: 30425315
[TBL] [Abstract][Full Text] [Related]
11. Promising features of low-temperature grown Ge nanostructures on Si(001) substrates.
Wang Z; Wang S; Yin Y; Liu T; Lin D; Li DH; Yang X; Jiang Z; Zhong Z
Nanotechnology; 2017 Mar; 28(11):115701. PubMed ID: 28140355
[TBL] [Abstract][Full Text] [Related]
12. Synthesis of Ge
Mahmodi H; Hashim MR; Soga T; Alrokayan S; Khan HA; Rusop M
Materials (Basel); 2018 Nov; 11(11):. PubMed ID: 30424494
[TBL] [Abstract][Full Text] [Related]
13. Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate.
Xu B; Du Y; Wang G; Xiong W; Kong Z; Zhao X; Miao Y; Wang Y; Lin H; Su J; Li B; Wu Y; Radamson HH
Materials (Basel); 2022 May; 15(10):. PubMed ID: 35629618
[TBL] [Abstract][Full Text] [Related]
14. Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth.
Zaumseil P; Yamamoto Y; Schubert MA; Capellini G; Skibitzki O; Zoellner MH; Schroeder T
Nanotechnology; 2015 Sep; 26(35):355707. PubMed ID: 26267559
[TBL] [Abstract][Full Text] [Related]
15. Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition.
Bollani M; Chrastina D; Fedorov A; Sordan R; Picco A; Bonera E
Nanotechnology; 2010 Nov; 21(47):475302. PubMed ID: 21030775
[TBL] [Abstract][Full Text] [Related]
16. Ge self-diffusion in epitaxial Si(1)-(x)Ge(x) layers.
Zangenberg NR; Lundsgaard Hansen J; Fage-Pedersen J; Nylandsted Larsen A
Phys Rev Lett; 2001 Sep; 87(12):125901. PubMed ID: 11580527
[TBL] [Abstract][Full Text] [Related]
17. High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors.
Wirths S; Stange D; Pampillón MA; Tiedemann AT; Mussler G; Fox A; Breuer U; Baert B; San Andrés E; Nguyen ND; Hartmann JM; Ikonic Z; Mantl S; Buca D
ACS Appl Mater Interfaces; 2015 Jan; 7(1):62-7. PubMed ID: 25531887
[TBL] [Abstract][Full Text] [Related]
18. Fabrication of High-Quality and Strain-Relaxed GeSn Microdisks by Integrating Selective Epitaxial Growth and Selective Wet Etching Methods.
Zhu G; Liu T; Zhong Z; Yang X; Wang L; Jiang Z
Nanoscale Res Lett; 2020 Jan; 15(1):18. PubMed ID: 31965340
[TBL] [Abstract][Full Text] [Related]
19. Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures.
Timofeev VA; Nikiforov AI; Tuktamyshev AR; Mashanov VI; Loshkarev ID; Bloshkin AA; Gutakovskii AK
Nanotechnology; 2018 Apr; 29(15):154002. PubMed ID: 29388560
[TBL] [Abstract][Full Text] [Related]
20. Impact of annealing on surface morphology and photoluminescence of self-assembled Ge and Si quantum dots.
Samavati A; Othaman Z; Dabagh S; Ghoshal SK
J Nanosci Nanotechnol; 2014 Jul; 14(7):5266-71. PubMed ID: 24758014
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]