275 related articles for article (PubMed ID: 27483937)
1. Electrical and Optical Properties of Si-Incorporated a-C:H Films via the Radio Frequency Plasma-Enhanced Chemical Vapor Deposition Method.
Kim IJ; Choi WS; Hong B
J Nanosci Nanotechnol; 2016 May; 16(5):5394-7. PubMed ID: 27483937
[TBL] [Abstract][Full Text] [Related]
2. Highly conducting phosphorous doped Nc-Si:H thin films deposited at high deposition rate by hot-wire chemical vapor deposition method.
Waman VS; Kamble MM; Ghosh SS; Mayabadi A; Sathe VG; Amalnekar DP; Pathan HM; Jadkar SR
J Nanosci Nanotechnol; 2012 Nov; 12(11):8459-66. PubMed ID: 23421231
[TBL] [Abstract][Full Text] [Related]
3. Investigation of structural disorder using electron temperature in VHF-PECVD on hydrogenated amorphous silicon films for thin film solar cell applications.
Shin C; Park J; Kim S; Jang J; Jung J; Lee YJ; Yi J
J Nanosci Nanotechnol; 2014 Oct; 14(10):8110-6. PubMed ID: 25942934
[TBL] [Abstract][Full Text] [Related]
4. High pressure growth of nanocrystalline silicon films.
Kumar S; Gope J; Kumar A; Parashar A; Rauthan CM; Dixit PN
J Nanosci Nanotechnol; 2008 Aug; 8(8):4211-7. PubMed ID: 19049205
[TBL] [Abstract][Full Text] [Related]
5. Characterization of intrinsic a-Si:H films prepared by inductively coupled plasma chemical vapor deposition for solar cell applications.
Jeong C; Boo S; Jeon M; Kamisako K
J Nanosci Nanotechnol; 2007 Nov; 7(11):4169-73. PubMed ID: 18047144
[TBL] [Abstract][Full Text] [Related]
6. Preparation of phosphorus doped hydrogenated microcrystalline silicon thin films by inductively coupled plasma chemical vapor deposition and their characteristics for solar cell applications.
Jeong C; Boo S; Kim TW; Choi BH; Kim HS; Chang DR; Lee JH; Kamisako K
J Nanosci Nanotechnol; 2008 Oct; 8(10):5521-6. PubMed ID: 19198490
[TBL] [Abstract][Full Text] [Related]
7. Reaction Gas Ratio Effect on the Growth of a Diamond Film Using Microwave Plasma-Enhanced Chemical Vapor Deposition.
Joung YH; Kang FS; Lee S; Kang H; Choi WS; Choi YK; Song BS; Lee J; Hong B
J Nanosci Nanotechnol; 2016 May; 16(5):5295-7. PubMed ID: 27483918
[TBL] [Abstract][Full Text] [Related]
8. Structure and 1/f noise of boron doped polymorphous silicon films.
Li SB; Wu ZM; Jiang YD; Li W; Liao NM; Yu JS
Nanotechnology; 2008 Feb; 19(8):085706. PubMed ID: 21730737
[TBL] [Abstract][Full Text] [Related]
9. Optical Emission Imaging and Modeling Investigations of Microwave-Activated SiH
Mahoney EJD; Lalji AKSK; Allden JWR; Truscott BS; Ashfold MNR; Mankelevich YA
J Phys Chem A; 2020 Jun; 124(25):5109-5128. PubMed ID: 32475115
[TBL] [Abstract][Full Text] [Related]
10. Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films.
Śmietana M; Mroczyński R; Kwietniewski N
Materials (Basel); 2014 Feb; 7(2):1249-1260. PubMed ID: 28788512
[TBL] [Abstract][Full Text] [Related]
11. Effects of low argon dilution ratio on the nanocrystallization and properties of a-Si:H thin films.
Li Z; Li W; Cai H; Gong Y; Jiang Y
J Nanosci Nanotechnol; 2010 Nov; 10(11):7667-70. PubMed ID: 21138006
[TBL] [Abstract][Full Text] [Related]
12. Microstructure and properties of silicon-incorporated DLC film fabricated using HMDS gas and RF-PECVD process.
Song BJ; Song WJ; Han JH; Kim KR; Yoon SJ; Kim TG; Kim JK; Cho H; Kim GH; Hwang DY; Kim HS
J Nanosci Nanotechnol; 2014 Dec; 14(12):9124-30. PubMed ID: 25971022
[TBL] [Abstract][Full Text] [Related]
13. Role of trimethylboron to silane ratio on the properties of p-type nanocrystalline silicon thin film deposited by radio frequency plasma enhanced chemical vapour deposition.
Aguas H; Filonovich SA; Bernacka-Wojcik I; Fortunato E; Martins R
J Nanosci Nanotechnol; 2010 Apr; 10(4):2547-51. PubMed ID: 20355460
[TBL] [Abstract][Full Text] [Related]
14. Comparative Study of Hydrogen and Argon Dilution Effects in Amorphous SiC Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition.
Zhao T; Qin Y; Wang B; Yang JF
J Nanosci Nanotechnol; 2015 Sep; 15(9):7371-5. PubMed ID: 26716338
[TBL] [Abstract][Full Text] [Related]
15. [Raman spectra analysis of bromine doped hydrogenated amorphous carbon (a-C : Br : H) films deposited by RF-PECVD].
Feng JH; Lu TC; Wu WD; Jia P
Guang Pu Xue Yu Guang Pu Fen Xi; 2009 Dec; 29(12):3309-11. PubMed ID: 20210157
[TBL] [Abstract][Full Text] [Related]
16. Variation in the nanostructural features of Nc-Si:H films with radio frequency power conditions.
Son JI; Nam HJ; Cho NH
J Nanosci Nanotechnol; 2013 Feb; 13(2):898-903. PubMed ID: 23646538
[TBL] [Abstract][Full Text] [Related]
17. [Influence of Nitrogen Flow Rate on the Structure and Luminescence Properties of Silicon-Rich Silicon Nitride Film Materials in a High Hydrogen Atmosphere].
Zhang LR; Zhou BQ; Zhang N; Liu XC; Wuren TY; Gao AM
Guang Pu Xue Yu Guang Pu Fen Xi; 2016 Jul; 36(7):2048-54. PubMed ID: 30035880
[TBL] [Abstract][Full Text] [Related]
18. Spectroscopic ellipsometry analysis of amorphous silicon thin films for Si-nanocrystals.
Park J; Iftiquar SM; Kim Y; Park S; Lee S; Kim J; Yi J
J Nanosci Nanotechnol; 2012 Apr; 12(4):3228-32. PubMed ID: 22849094
[TBL] [Abstract][Full Text] [Related]
19. Si-rich W silicide films composed of W-atom-encapsulated Si clusters deposited using gas-phase reactions of WF6 with SiH4.
Okada N; Uchida N; Kanayama T
J Chem Phys; 2016 Feb; 144(8):084703. PubMed ID: 26931714
[TBL] [Abstract][Full Text] [Related]
20. Preparation of born-doped a-SiC:H thin films by ICP-CVD method and to the application of large-area heterojunction solar cells.
Jeong C; Kim YB; Lee SH; Kim JH
J Nanosci Nanotechnol; 2010 May; 10(5):3321-5. PubMed ID: 20358948
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]