These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

100 related articles for article (PubMed ID: 27501469)

  • 21. Narrowing the length distribution of Ge nanowires.
    Dubrovskii VG; Xu T; Lambert Y; Nys JP; Grandidier B; Stiévenard D; Chen W; Pareige P
    Phys Rev Lett; 2012 Mar; 108(10):105501. PubMed ID: 22463421
    [TBL] [Abstract][Full Text] [Related]  

  • 22. InAs/InSb nanowire heterostructures grown by chemical beam epitaxy.
    Ercolani D; Rossi F; Li A; Roddaro S; Grillo V; Salviati G; Beltram F; Sorba L
    Nanotechnology; 2009 Dec; 20(50):505605. PubMed ID: 19907063
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets.
    Potts H; Morgan NP; Tütüncüoglu G; Friedl M; Morral AF
    Nanotechnology; 2017 Feb; 28(5):054001. PubMed ID: 28008881
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy.
    Koblmüller G; Hertenberger S; Vizbaras K; Bichler M; Bao F; Zhang JP; Abstreiter G
    Nanotechnology; 2010 Sep; 21(36):365602. PubMed ID: 20702932
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Mechanisms of molecular beam epitaxy growth in InAs/InP nanowire heterostructures.
    Haapamaki CM; Lapierre RR
    Nanotechnology; 2011 Aug; 22(33):335602. PubMed ID: 21788682
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Controlled synthesis of phase-pure InAs nanowires on Si(111) by diminishing the diameter to 10 nm.
    Pan D; Fu M; Yu X; Wang X; Zhu L; Nie S; Wang S; Chen Q; Xiong P; von Molnár S; Zhao J
    Nano Lett; 2014 Mar; 14(3):1214-20. PubMed ID: 24528159
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Modeling of InAs-InSb nanowires grown by Au-assisted chemical beam epitaxy.
    Lugani L; Ercolani D; Sorba L; Sibirev NV; Timofeeva MA; Dubrovskii VG
    Nanotechnology; 2012 Mar; 23(9):095602. PubMed ID: 22322330
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Conditions for high yield of selective-area epitaxy InAs nanowires on SiO x /Si(111) substrates.
    Robson MT; Dubrovskii VG; LaPierre RR
    Nanotechnology; 2015 Nov; 26(46):465301. PubMed ID: 26508403
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Multimode Fabry-Perot conductance oscillations in suspended stacking-faults-free InAs nanowires.
    Kretinin AV; Popovitz-Biro R; Mahalu D; Shtrikman H
    Nano Lett; 2010 Sep; 10(9):3439-45. PubMed ID: 20695446
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors.
    Anyebe EA; Sandall I; Jin ZM; Sanchez AM; Rajpalke MK; Veal TD; Cao YC; Li HD; Harvey R; Zhuang QD
    Sci Rep; 2017 Apr; 7():46110. PubMed ID: 28393845
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses.
    Xu HY; Guo YN; Sun W; Liao ZM; Burgess T; Lu HF; Gao Q; Tan HH; Jagadish C; Zou J
    Nanoscale Res Lett; 2012 Oct; 7(1):589. PubMed ID: 23095345
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Engineering the Size Distributions of Ordered GaAs Nanowires on Silicon.
    Vukajlovic-Plestina J; Kim W; Dubrovski VG; Tütüncüoğlu G; Lagier M; Potts H; Friedl M; Fontcuberta I Morral A
    Nano Lett; 2017 Jul; 17(7):4101-4108. PubMed ID: 28613909
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Ag-catalyzed InAs nanowires grown on transferable graphite flakes.
    Meyer-Holdt J; Kanne T; Sestoft JE; Gejl A; Zeng L; Johnson E; Olsson E; Nygård J; Krogstrup P
    Nanotechnology; 2016 Sep; 27(36):365603. PubMed ID: 27479073
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Does desorption affect the length distributions of nanowires?
    Dubrovskii VG; Barcus J; Kim W; Vukajlovic-Plestina J; I Morral AF
    Nanotechnology; 2019 Nov; 30(47):475604. PubMed ID: 31416057
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Growth of vertical InAs nanowires on heterostructured substrates.
    Roddaro S; Caroff P; Biasiol G; Rossi F; Bocchi C; Nilsson K; Fröberg L; Wagner JB; Samuelson L; Wernersson LE; Sorba L
    Nanotechnology; 2009 Jul; 20(28):285303. PubMed ID: 19546499
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Misfit dislocation free InAs/GaSb core-shell nanowires grown by molecular beam epitaxy.
    Rieger T; Grützmacher D; Lepsa MI
    Nanoscale; 2015 Jan; 7(1):356-64. PubMed ID: 25406991
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy.
    Yu X; Li L; Wang H; Xiao J; Shen C; Pan D; Zhao J
    Nanoscale; 2016 May; 8(20):10615-21. PubMed ID: 27194599
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Self-catalyzed VLS grown InAs nanowires with twinning superlattices.
    Grap T; Rieger T; Blömers Ch; Schäpers T; Grützmacher D; Lepsa MI
    Nanotechnology; 2013 Aug; 24(33):335601. PubMed ID: 23881182
    [TBL] [Abstract][Full Text] [Related]  

  • 39. The influence of Au film thickness and annealing conditions on the VLS-assisted growth of ZnO nanostructures.
    Govatsi K; Chrissanthopoulos A; Dracopoulos V; Yannopoulos SN
    Nanotechnology; 2014 May; 25(21):215601. PubMed ID: 24784032
    [TBL] [Abstract][Full Text] [Related]  

  • 40. New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles.
    Bouravleuv A; Ilkiv I; Reznik R; Kotlyar K; Soshnikov I; Cirlin G; Brunkov P; Kirilenko D; Bondarenko L; Nepomnyaschiy A; Gruznev D; Zotov A; Saranin A; Dhaka V; Lipsanen H
    Nanotechnology; 2018 Jan; 29(4):045602. PubMed ID: 29135463
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 5.