164 related articles for article (PubMed ID: 27538849)
1. Saving Moore's Law Down To 1 nm Channels With Anisotropic Effective Mass.
Ilatikhameneh H; Ameen T; Novakovic B; Tan Y; Klimeck G; Rahman R
Sci Rep; 2016 Aug; 6():31501. PubMed ID: 27538849
[TBL] [Abstract][Full Text] [Related]
2. Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors.
Ameen TA; Ilatikhameneh H; Klimeck G; Rahman R
Sci Rep; 2016 Jun; 6():28515. PubMed ID: 27345020
[TBL] [Abstract][Full Text] [Related]
3. Complementary Black Phosphorus Tunneling Field-Effect Transistors.
Wu P; Ameen T; Zhang H; Bendersky LA; Ilatikhameneh H; Klimeck G; Rahman R; Davydov AV; Appenzeller J
ACS Nano; 2019 Jan; 13(1):377-385. PubMed ID: 30563322
[TBL] [Abstract][Full Text] [Related]
4. Many-Body Effect and Device Performance Limit of Monolayer InSe.
Wang Y; Fei R; Quhe R; Li J; Zhang H; Zhang X; Shi B; Xiao L; Song Z; Yang J; Shi J; Pan F; Lu J
ACS Appl Mater Interfaces; 2018 Jul; 10(27):23344-23352. PubMed ID: 29916240
[TBL] [Abstract][Full Text] [Related]
5. Sub-5 nm monolayer black phosphorene tunneling transistors.
Li H; Shi B; Pan Y; Li J; Xu L; Xu L; Zhang Z; Pan F; Lu J
Nanotechnology; 2018 Nov; 29(48):485202. PubMed ID: 30207546
[TBL] [Abstract][Full Text] [Related]
6. Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs).
Choi WY; Lee HK
Nano Converg; 2016; 3(1):13. PubMed ID: 28191423
[TBL] [Abstract][Full Text] [Related]
7. CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology.
Radamson HH; Miao Y; Zhou Z; Wu Z; Kong Z; Gao J; Yang H; Ren Y; Zhang Y; Shi J; Xiang J; Cui H; Lu B; Li J; Liu J; Lin H; Xu H; Li M; Cao J; He C; Duan X; Zhao X; Su J; Du Y; Yu J; Wu Y; Jiang M; Liang D; Li B; Dong Y; Wang G
Nanomaterials (Basel); 2024 May; 14(10):. PubMed ID: 38786792
[TBL] [Abstract][Full Text] [Related]
8. WSe
Pang CS; Chen CY; Ameen T; Zhang S; Ilatikhameneh H; Rahman R; Klimeck G; Chen Z
Small; 2019 Oct; 15(41):e1902770. PubMed ID: 31448564
[TBL] [Abstract][Full Text] [Related]
9. Anisotropic Transport Property of Antimonene MOSFETs.
Yin Y; Shao C; Zhang C; Zhang Z; Zhang X; Robertson J; Guo Y
ACS Appl Mater Interfaces; 2020 May; 12(19):22378-22386. PubMed ID: 32320208
[TBL] [Abstract][Full Text] [Related]
10. Quantum transport of sub-5 nm InSe and In
Guo H; Yin Y; Yu W; Robertson J; Liu S; Zhang Z; Guo Y
Nanoscale; 2023 Feb; 15(7):3496-3503. PubMed ID: 36723054
[TBL] [Abstract][Full Text] [Related]
11. Compact Potential Model for Si
Kim S; Choi WY
J Nanosci Nanotechnol; 2018 Sep; 18(9):5953-5958. PubMed ID: 29677723
[TBL] [Abstract][Full Text] [Related]
12. Performance of Monolayer Blue Phosphorene Double-Gate MOSFETs from the First Principles.
Wang J; Cai Q; Lei J; Yang G; Xue J; Chen D; Liu B; Lu H; Zhang R; Zheng Y
ACS Appl Mater Interfaces; 2019 Jun; 11(23):20956-20964. PubMed ID: 31046216
[TBL] [Abstract][Full Text] [Related]
13. A subthermionic tunnel field-effect transistor with an atomically thin channel.
Sarkar D; Xie X; Liu W; Cao W; Kang J; Gong Y; Kraemer S; Ajayan PM; Banerjee K
Nature; 2015 Oct; 526(7571):91-5. PubMed ID: 26432247
[TBL] [Abstract][Full Text] [Related]
14. High-performance sub-10 nm monolayer Bi
Quhe R; Liu J; Wu J; Yang J; Wang Y; Li Q; Li T; Guo Y; Yang J; Peng H; Lei M; Lu J
Nanoscale; 2019 Jan; 11(2):532-540. PubMed ID: 30543242
[TBL] [Abstract][Full Text] [Related]
15. Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects.
Lu J; Fan ZQ; Gong J; Chen JZ; ManduLa H; Zhang YY; Yang SY; Jiang XW
Phys Chem Chem Phys; 2018 Feb; 20(8):5699-5707. PubMed ID: 29410993
[TBL] [Abstract][Full Text] [Related]
16. Impact of edge states on device performance of phosphorene heterojunction tunneling field effect transistors.
Liu F; Wang J; Guo H
Nanoscale; 2016 Oct; 8(42):18180-18186. PubMed ID: 27747341
[TBL] [Abstract][Full Text] [Related]
17. Nanoscale Vacuum Channel Transistor.
Han JW; Moon DI; Meyyappan M
Nano Lett; 2017 Apr; 17(4):2146-2151. PubMed ID: 28334531
[TBL] [Abstract][Full Text] [Related]
18. Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si.
Kilpi OP; Svensson J; Wu J; Persson AR; Wallenberg R; Lind E; Wernersson LE
Nano Lett; 2017 Oct; 17(10):6006-6010. PubMed ID: 28873310
[TBL] [Abstract][Full Text] [Related]
19. Air-gating and chemical-gating in transistors and sensing devices made from hollow TiO2 semiconductor nanotubes.
Alivov Y; Funke H; Nagpal P
Nanotechnology; 2015 Jul; 26(29):295203. PubMed ID: 26134618
[TBL] [Abstract][Full Text] [Related]
20. Novel antimonene tunneling field-effect transistors using an abrupt transition from semiconductor to metal in monolayer and multilayer antimonene heterostructures.
Chang J
Nanoscale; 2018 Jul; 10(28):13652-13660. PubMed ID: 29985510
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]