410 related articles for article (PubMed ID: 27539144)
1. A magnetic synapse: multilevel spin-torque memristor with perpendicular anisotropy.
Lequeux S; Sampaio J; Cros V; Yakushiji K; Fukushima A; Matsumoto R; Kubota H; Yuasa S; Grollier J
Sci Rep; 2016 Aug; 6():31510. PubMed ID: 27539144
[TBL] [Abstract][Full Text] [Related]
2. Spin-Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing.
Zhang X; Cai W; Wang M; Pan B; Cao K; Guo M; Zhang T; Cheng H; Li S; Zhu D; Wang L; Shi F; Du J; Zhao W
Adv Sci (Weinh); 2021 May; 8(10):2004645. PubMed ID: 34026457
[TBL] [Abstract][Full Text] [Related]
3. Thousands of conductance levels in memristors integrated on CMOS.
Rao M; Tang H; Wu J; Song W; Zhang M; Yin W; Zhuo Y; Kiani F; Chen B; Jiang X; Liu H; Chen HY; Midya R; Ye F; Jiang H; Wang Z; Wu M; Hu M; Wang H; Xia Q; Ge N; Li J; Yang JJ
Nature; 2023 Mar; 615(7954):823-829. PubMed ID: 36991190
[TBL] [Abstract][Full Text] [Related]
4. Bipolar Analog Memristors as Artificial Synapses for Neuromorphic Computing.
Wang R; Shi T; Zhang X; Wang W; Wei J; Lu J; Zhao X; Wu Z; Cao R; Long S; Liu Q; Liu M
Materials (Basel); 2018 Oct; 11(11):. PubMed ID: 30373122
[TBL] [Abstract][Full Text] [Related]
5. Parylene-based memristive crossbar structures with multilevel resistive switching for neuromorphic computing.
Shvetsov BS; Minnekhanov AA; Emelyanov AV; Ilyasov AI; Grishchenko YV; Zanaveskin ML; Nesmelov AA; Streltsov DR; Patsaev TD; Vasiliev AL; Rylkov VV; Demin VA
Nanotechnology; 2022 Mar; 33(25):. PubMed ID: 35276689
[TBL] [Abstract][Full Text] [Related]
6. Emerging Memristive Artificial Synapses and Neurons for Energy-Efficient Neuromorphic Computing.
Choi S; Yang J; Wang G
Adv Mater; 2020 Dec; 32(51):e2004659. PubMed ID: 33006204
[TBL] [Abstract][Full Text] [Related]
7. Perceptrons from memristors.
Silva F; Sanz M; Seixas J; Solano E; Omar Y
Neural Netw; 2020 Feb; 122():273-278. PubMed ID: 31731044
[TBL] [Abstract][Full Text] [Related]
8. Spin-transfer torque magnetic memory as a stochastic memristive synapse for neuromorphic systems.
Vincent AF; Larroque J; Locatelli N; Ben Romdhane N; Bichler O; Gamrat C; Zhao WS; Klein JO; Galdin-Retailleau S; Querlioz D
IEEE Trans Biomed Circuits Syst; 2015 Apr; 9(2):166-74. PubMed ID: 25879967
[TBL] [Abstract][Full Text] [Related]
9. Stochastic memristive devices for computing and neuromorphic applications.
Gaba S; Sheridan P; Zhou J; Choi S; Lu W
Nanoscale; 2013 Jul; 5(13):5872-8. PubMed ID: 23698627
[TBL] [Abstract][Full Text] [Related]
10. Vertical MoS
Xu R; Jang H; Lee MH; Amanov D; Cho Y; Kim H; Park S; Shin HJ; Ham D
Nano Lett; 2019 Apr; 19(4):2411-2417. PubMed ID: 30896171
[TBL] [Abstract][Full Text] [Related]
11. Electric currents in networks of interconnected memristors.
Nedaaee Oskoee E; Sahimi M
Phys Rev E Stat Nonlin Soft Matter Phys; 2011 Mar; 83(3 Pt 1):031105. PubMed ID: 21517452
[TBL] [Abstract][Full Text] [Related]
12. Polymer Analog Memristive Synapse with Atomic-Scale Conductive Filament for Flexible Neuromorphic Computing System.
Jang BC; Kim S; Yang SY; Park J; Cha JH; Oh J; Choi J; Im SG; Dravid VP; Choi SY
Nano Lett; 2019 Feb; 19(2):839-849. PubMed ID: 30608706
[TBL] [Abstract][Full Text] [Related]
13. Low-Voltage Domain-Wall LiNbO
Chaudhary P; Lu H; Lipatov A; Ahmadi Z; McConville JPV; Sokolov A; Shield JE; Sinitskii A; Gregg JM; Gruverman A
Nano Lett; 2020 Aug; 20(8):5873-5878. PubMed ID: 32574058
[TBL] [Abstract][Full Text] [Related]
14. Improved analog switching characteristics of Ta
Lee TS; Choi C
Nanotechnology; 2022 Mar; 33(24):. PubMed ID: 35226891
[TBL] [Abstract][Full Text] [Related]
15. Linear conductance update improvement of CMOS-compatible second-order memristors for fast and energy-efficient training of a neural network using a memristor crossbar array.
Park SO; Park T; Jeong H; Hong S; Seo S; Kwon Y; Lee J; Choi S
Nanoscale Horiz; 2023 Sep; 8(10):1366-1376. PubMed ID: 37403772
[TBL] [Abstract][Full Text] [Related]
16. MoS
Li D; Wu B; Zhu X; Wang J; Ryu B; Lu WD; Lu W; Liang X
ACS Nano; 2018 Sep; 12(9):9240-9252. PubMed ID: 30192507
[TBL] [Abstract][Full Text] [Related]
17. Spintronic memristors for neuromorphic circuits based on the angular variation of tunnel magnetoresistance.
Mansueto M; Chavent A; Auffret S; Joumard I; Vila L; Sousa RC; Buda-Prejbeanu LD; Prejbeanu IL; Dieny B
Nanoscale; 2021 Jul; 13(26):11488-11496. PubMed ID: 34165111
[TBL] [Abstract][Full Text] [Related]
18. Spin-orbit torque magnetization switching controlled by geometry.
Safeer CK; Jué E; Lopez A; Buda-Prejbeanu L; Auffret S; Pizzini S; Boulle O; Miron IM; Gaudin G
Nat Nanotechnol; 2016 Feb; 11(2):143-6. PubMed ID: 26551017
[TBL] [Abstract][Full Text] [Related]
19. Field-Free Spin-Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current.
Kateel V; Krizakova V; Rao S; Cai K; Gupta M; Monteiro MG; Yasin F; Sorée B; De Boeck J; Couet S; Gambardella P; Kar GS; Garello K
Nano Lett; 2023 Jun; 23(12):5482-5489. PubMed ID: 37295781
[TBL] [Abstract][Full Text] [Related]
20. Integration of nanoscale memristor synapses in neuromorphic computing architectures.
Indiveri G; Linares-Barranco B; Legenstein R; Deligeorgis G; Prodromakis T
Nanotechnology; 2013 Sep; 24(38):384010. PubMed ID: 23999381
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
