These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

153 related articles for article (PubMed ID: 27541814)

  • 1. Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100).
    Shklyaev AA; Latyshev AV
    Nanoscale Res Lett; 2016 Dec; 11(1):366. PubMed ID: 27541814
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Raman microscopy and infrared optical properties of SiGe Mie resonators formed on SiO
    Poborchii V; Bouabdellaoui M; Uchida N; Ronda A; Berbezier I; David T; Ruiz CM; Zazoui M; Sena RP; Abbarchi M; Favre L
    Nanotechnology; 2020 May; 31(19):195602. PubMed ID: 31931487
    [TBL] [Abstract][Full Text] [Related]  

  • 3. SiGe nanocrystals in SiO
    Stavarache I; Logofatu C; Sultan MT; Manolescu A; Svavarsson HG; Teodorescu VS; Ciurea ML
    Sci Rep; 2020 Feb; 10(1):3252. PubMed ID: 32094361
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots.
    Cui J; Lin JH; Wu YQ; Fan YL; Zhong Z; Yang XJ; Jiang ZM
    Nanoscale Res Lett; 2011 Dec; 6(1):59. PubMed ID: 27502681
    [TBL] [Abstract][Full Text] [Related]  

  • 5. The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nano-pillars.
    Zaumseil P; Kozlowski G; Schubert MA; Yamamoto Y; Bauer J; Schülli TU; Tillack B; Schroeder T
    Nanotechnology; 2012 Sep; 23(35):355706. PubMed ID: 22894894
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Fabrication of core-shell nanostructures via silicon on insulator dewetting and germanium condensation: towards a strain tuning method for SiGe-based heterostructures in a three-dimensional geometry.
    Naffouti M; David T; Benkouider A; Favre L; Cabie M; Ronda A; Berbezier I; Abbarchi M
    Nanotechnology; 2016 Jul; 27(30):305602. PubMed ID: 27302611
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Nanocrystallized Ge-Rich SiGe-HfO
    Palade C; Lepadatu AM; Slav A; Teodorescu VS; Stoica T; Ciurea ML; Ursutiu D; Samoila C
    Materials (Basel); 2021 Nov; 14(22):. PubMed ID: 34832440
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Enhanced direct-gap light emission from Si-capped n
    Higashitarumizu N; Ishikawa Y
    Opt Express; 2017 Sep; 25(18):21286-21300. PubMed ID: 29041428
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Ge-rich SiGe-on-insulator for waveguide optical modulator application fabricated by Ge condensation and SiGe regrowth.
    Kim Y; Yokoyama M; Taoka N; Takenaka M; Takagi S
    Opt Express; 2013 Aug; 21(17):19615-23. PubMed ID: 24105508
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Large area and depth-profiling dislocation imaging and strain analysis in Si/SiGe/Si heterostructures.
    Chen X; Zuo D; Kim S; Mabon J; Sardela M; Wen J; Zuo JM
    Microsc Microanal; 2014 Oct; 20(5):1521-7. PubMed ID: 25158752
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nanodiffraction.
    Richard MI; Zoellner MH; Chahine GA; Zaumseil P; Capellini G; Häberlen M; Storck P; Schülli TU; Schroeder T
    ACS Appl Mater Interfaces; 2015 Dec; 7(48):26696-700. PubMed ID: 26541318
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Evolution of Ge nanoislands on Si(110)-'16 x 2' surface under thermal annealing studied using STM.
    Gangopadhyay S; Yoshimura M; Ueda K
    Nanotechnology; 2009 Nov; 20(47):475401. PubMed ID: 19875880
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Dislocation sink annihilating threading dislocations in strain-relaxed Si
    Choi SJ; Kim IH; Park JS; Shim TH; Park JG
    Nanotechnology; 2020 Mar; 31(12):12LT01. PubMed ID: 31739301
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si.
    Salvalaglio M; Bergamaschini R; Isa F; Scaccabarozzi A; Isella G; Backofen R; Voigt A; Montalenti F; Capellini G; Schroeder T; von Känel H; Miglio L
    ACS Appl Mater Interfaces; 2015 Sep; 7(34):19219-25. PubMed ID: 26252761
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Lateral Ge Diffusion During Oxidation of Si/SiGe Fins.
    Brewer WM; Xin Y; Hatem C; Diercks D; Truong VQ; Jones KS
    Nano Lett; 2017 Apr; 17(4):2159-2164. PubMed ID: 28249115
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Influence of the Si cap layer on the SiGe islands morphology.
    Zak M; Laval JY; Dłuzewski PA; Kret S; Yam V; Bouchier D; Fossard F
    Micron; 2009 Jan; 40(1):122-5. PubMed ID: 18395456
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Dewetting behavior of Ge layers on SiO
    Shklyaev AA; Latyshev AV
    Sci Rep; 2020 Aug; 10(1):13759. PubMed ID: 32792554
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD.
    Du Y; Kong Z; Toprak MS; Wang G; Miao Y; Xu B; Yu J; Li B; Lin H; Han J; Dong Y; Wang W; Radamson HH
    Nanomaterials (Basel); 2021 Apr; 11(4):. PubMed ID: 33917367
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Quantum-confined direct band transitions in tensile strained Ge/SiGe quantum wells on silicon substrates.
    Chen Y; Li C; Lai H; Chen S
    Nanotechnology; 2010 Mar; 21(11):115207. PubMed ID: 20179329
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Epitaxial growth of SiGe films by annealing Al-Ge alloyed pastes on Si substrate.
    Fukuda K; Miyamoto S; Nakahara M; Suzuki S; Dhamrin M; Maeda K; Fujiwara K; Uraoka Y; Usami N
    Sci Rep; 2022 Sep; 12(1):14770. PubMed ID: 36096915
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.