291 related articles for article (PubMed ID: 27552134)
1. Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs).
Kim CK; Kim E; Lee MK; Park JY; Seol ML; Bae H; Bang T; Jeon SB; Jun S; Park SH; Choi KC; Choi YK
ACS Appl Mater Interfaces; 2016 Sep; 8(36):23820-6. PubMed ID: 27552134
[TBL] [Abstract][Full Text] [Related]
2. Room-Temperature Fabrication of High-Performance Amorphous In-Ga-Zn-O/Al
Ning H; Zeng Y; Kuang Y; Zheng Z; Zhou P; Yao R; Zhang H; Bao W; Chen G; Fang Z; Peng J
ACS Appl Mater Interfaces; 2017 Aug; 9(33):27792-27800. PubMed ID: 28767216
[TBL] [Abstract][Full Text] [Related]
3. Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors.
Heo JS; Jo JW; Kang J; Jeong CY; Jeong HY; Kim SK; Kim K; Kwon HI; Kim J; Kim YH; Kim MG; Park SK
ACS Appl Mater Interfaces; 2016 Apr; 8(16):10403-12. PubMed ID: 27035796
[TBL] [Abstract][Full Text] [Related]
4. Lowering the Trap-State Density of Transparent Amorphous Oxide Semiconductor-Based Thin Film Transistors Through Microwave Irradiation.
Cho MH; Cho WJ
J Nanosci Nanotechnol; 2020 Nov; 20(11):6920-6924. PubMed ID: 32604537
[TBL] [Abstract][Full Text] [Related]
5. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.
Park S; Bang S; Lee S; Park J; Ko Y; Jeon H
J Nanosci Nanotechnol; 2011 Jul; 11(7):6029-33. PubMed ID: 22121652
[TBL] [Abstract][Full Text] [Related]
6. Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array.
Kim HJ; Han CJ; Yoo B; Lee J; Lee K; Lee KH; Oh MS
Micromachines (Basel); 2020 May; 11(5):. PubMed ID: 32443447
[TBL] [Abstract][Full Text] [Related]
7. Effect of the annealing ambient on the electrical characteristics of the amorphous InGaZnO thin film transistors.
Huang YC; Yang PY; Huang HY; Wang SJ; Cheng HC
J Nanosci Nanotechnol; 2012 Jul; 12(7):5625-30. PubMed ID: 22966622
[TBL] [Abstract][Full Text] [Related]
8. Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing.
Kim SH; Cho WJ
J Nanosci Nanotechnol; 2020 Aug; 20(8):4671-4677. PubMed ID: 32126639
[TBL] [Abstract][Full Text] [Related]
9. Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition.
Yoon SM; Seong NJ; Choi K; Seo GH; Shin WC
ACS Appl Mater Interfaces; 2017 Jul; 9(27):22676-22684. PubMed ID: 28653825
[TBL] [Abstract][Full Text] [Related]
10. Performance Improvement of In-Ga-Zn Oxide Thin-Film Transistors by Excimer Laser Annealing.
Zhang X; Li Y; Li Y; Xie X; Yin L
Micromachines (Basel); 2024 Jan; 15(2):. PubMed ID: 38398954
[TBL] [Abstract][Full Text] [Related]
11. Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature.
Yu BS; Jeon JY; Kang BC; Lee W; Kim YH; Ha TJ
Sci Rep; 2019 Jun; 9(1):8416. PubMed ID: 31182751
[TBL] [Abstract][Full Text] [Related]
12. Present status of amorphous In-Ga-Zn-O thin-film transistors.
Kamiya T; Nomura K; Hosono H
Sci Technol Adv Mater; 2010 Aug; 11(4):044305. PubMed ID: 27877346
[TBL] [Abstract][Full Text] [Related]
13. Carrier Concentration and Threshold Voltage Variability of Amorphous Oxide Semiconductors Using Vacuum Rapid Thermal Annealing.
Shin JW; Cho WJ
J Nanosci Nanotechnol; 2020 Jul; 20(7):4276-4281. PubMed ID: 31968457
[TBL] [Abstract][Full Text] [Related]
14. Quantum Confinement Effect in Amorphous In-Ga-Zn-O Heterojunction Channels for Thin-Film Transistors.
Koretomo D; Hamada S; Magari Y; Furuta M
Materials (Basel); 2020 Apr; 13(8):. PubMed ID: 32325945
[TBL] [Abstract][Full Text] [Related]
15. Low-voltage operation of ZrO2-gated n-type thin-film transistors based on a channel formed by hybrid phases of SnO and SnO2.
Chu HC; Shen YS; Hsieh CH; Huang JH; Wu YH
ACS Appl Mater Interfaces; 2015 Jul; 7(28):15129-37. PubMed ID: 26148216
[TBL] [Abstract][Full Text] [Related]
16. Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiO
Zhang W; Fan Z; Shen A; Dong C
Micromachines (Basel); 2021 Dec; 12(12):. PubMed ID: 34945401
[TBL] [Abstract][Full Text] [Related]
17. Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors.
Han Y; Lee DH; Cho ES; Kwon SJ; Yoo H
Micromachines (Basel); 2023 Jul; 14(7):. PubMed ID: 37512704
[TBL] [Abstract][Full Text] [Related]
18. Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.
Shin KY; Tak YJ; Kim WG; Hong S; Kim HJ
ACS Appl Mater Interfaces; 2017 Apr; 9(15):13278-13285. PubMed ID: 28299924
[TBL] [Abstract][Full Text] [Related]
19. Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors.
Chen HC; Chang TC; Lai WC; Chen GF; Chen BW; Hung YJ; Chang KJ; Cheng KC; Huang CS; Chen KK; Lu HH; Lin YH
ACS Appl Mater Interfaces; 2018 Aug; 10(31):25866-25870. PubMed ID: 29481039
[TBL] [Abstract][Full Text] [Related]
20. The Effect of Microwave Annealing of Reliability Characteristics on Amorphous IGZO Thin Film Transistors.
Wu CH; Chang KM; Chen YM; Zhang YX; Cheng CY
J Nanosci Nanotechnol; 2019 Apr; 19(4):2189-2192. PubMed ID: 30486965
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]