These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

196 related articles for article (PubMed ID: 27660741)

  • 1. High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices.
    Lin YH; Faber H; Labram JG; Stratakis E; Sygellou L; Kymakis E; Hastas NA; Li R; Zhao K; Amassian A; Treat ND; McLachlan M; Anthopoulos TD
    Adv Sci (Weinh); 2015 Jul; 2(7):1500058. PubMed ID: 27660741
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution.
    Faber H; Das S; Lin YH; Pliatsikas N; Zhao K; Kehagias T; Dimitrakopulos G; Amassian A; Patsalas PA; Anthopoulos TD
    Sci Adv; 2017 Mar; 3(3):e1602640. PubMed ID: 28435867
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Exploring Two-Dimensional Transport Phenomena in Metal Oxide Heterointerfaces for Next-Generation, High-Performance, Thin-Film Transistor Technologies.
    Labram JG; Lin YH; Anthopoulos TD
    Small; 2015 Nov; 11(41):5472-82. PubMed ID: 26349850
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Indium oxide thin-film transistors processed at low temperature via ultrasonic spray pyrolysis.
    Faber H; Lin YH; Thomas SR; Zhao K; Pliatsikas N; McLachlan MA; Amassian A; Patsalas PA; Anthopoulos TD
    ACS Appl Mater Interfaces; 2015 Jan; 7(1):782-90. PubMed ID: 25490965
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture.
    Yu X; Zhou N; Smith J; Lin H; Stallings K; Yu J; Marks TJ; Facchetti A
    ACS Appl Mater Interfaces; 2013 Aug; 5(16):7983-8. PubMed ID: 23876148
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Tailoring indium oxide nanocrystal synthesis conditions for air-stable high-performance solution-processed thin-film transistors.
    Swisher SL; Volkman SK; Subramanian V
    ACS Appl Mater Interfaces; 2015 May; 7(19):10069-75. PubMed ID: 25915094
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application.
    Kim HY; Jung EA; Mun G; Agbenyeke RE; Park BK; Park JS; Son SU; Jeon DJ; Park SK; Chung TM; Han JH
    ACS Appl Mater Interfaces; 2016 Oct; 8(40):26924-26931. PubMed ID: 27673338
    [TBL] [Abstract][Full Text] [Related]  

  • 8. High-Performance Indium-Based Oxide Transistors with Multiple Channels Through Nanolaminate Structure Fabricated by Plasma-Enhanced Atomic Layer Deposition.
    Cho MH; Choi CH; Kim MJ; Hur JS; Kim T; Jeong JK
    ACS Appl Mater Interfaces; 2023 Apr; 15(15):19137-19151. PubMed ID: 37023364
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Charge Transport in Low-Temperature Processed Thin-Film Transistors Based on Indium Oxide/Zinc Oxide Heterostructures.
    Krausmann J; Sanctis S; Engstler J; Luysberg M; Bruns M; Schneider JJ
    ACS Appl Mater Interfaces; 2018 Jun; 10(24):20661-20671. PubMed ID: 29888585
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Transparent Electronics Using One Binary Oxide for All Transistor Layers.
    Alshammari FH; Hota MK; Alshareef HN
    Small; 2018 Dec; 14(51):e1803969. PubMed ID: 30444579
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Nano-Scale Ga
    Bukke RN; Mude NN; Bae J; Jang J
    ACS Appl Mater Interfaces; 2022 Sep; 14(36):41508-41519. PubMed ID: 36066003
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.
    Liu A; Liu GX; Zhu HH; Xu F; Fortunato E; Martins R; Shan FK
    ACS Appl Mater Interfaces; 2014 Oct; 6(20):17364-9. PubMed ID: 25285983
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Solution-Grown Homojunction Oxide Thin-Film Transistors.
    Lee J; Lee J; Park J; Lee SE; Lee EG; Im C; Lim KH; Kim YS
    ACS Appl Mater Interfaces; 2019 Jan; 11(4):4103-4110. PubMed ID: 30607933
    [TBL] [Abstract][Full Text] [Related]  

  • 14. All-Solution-Processed High-Performance MoS
    Joung SY; Yim H; Lee D; Shim J; Yoo SY; Kim YH; Kim JS; Kim H; Hyeong SK; Kim J; Noh YY; Bae S; Park MJ; Choi JW; Lee CH
    ACS Nano; 2024 Jan; 18(3):1958-1968. PubMed ID: 38181200
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Direct Electrohydrodynamic Patterning of High-Performance All Metal Oxide Thin-Film Electronics.
    Liang Y; Yong J; Yu Y; Nirmalathas A; Ganesan K; Evans R; Nasr B; Skafidas E
    ACS Nano; 2019 Dec; 13(12):13957-13964. PubMed ID: 31793762
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Low-Temperature and Solution-Processable Zinc Oxide Transistors for Transparent Electronics.
    Jiang L; Li J; Huang K; Li S; Wang Q; Sun Z; Mei T; Wang J; Zhang L; Wang N; Wang X
    ACS Omega; 2017 Dec; 2(12):8990-8996. PubMed ID: 31457423
    [TBL] [Abstract][Full Text] [Related]  

  • 17. ZnO-based thin film transistors employing aluminum titanate gate dielectrics deposited by spray pyrolysis at ambient air.
    Afouxenidis D; Mazzocco R; Vourlias G; Livesley PJ; Krier A; Milne WI; Kolosov O; Adamopoulos G
    ACS Appl Mater Interfaces; 2015 Apr; 7(13):7334-41. PubMed ID: 25774574
    [TBL] [Abstract][Full Text] [Related]  

  • 18. High-mobility hydrogenated polycrystalline In
    Magari Y; Kataoka T; Yeh W; Furuta M
    Nat Commun; 2022 Feb; 13(1):1078. PubMed ID: 35228522
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process.
    Banger KK; Yamashita Y; Mori K; Peterson RL; Leedham T; Rickard J; Sirringhaus H
    Nat Mater; 2011 Jan; 10(1):45-50. PubMed ID: 21151167
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Lanthanum Doping in Zinc Oxide for Highly Reliable Thin-Film Transistors on Flexible Substrates by Spray Pyrolysis.
    Bukke RN; Saha JK; Mude NN; Kim Y; Lee S; Jang J
    ACS Appl Mater Interfaces; 2020 Aug; 12(31):35164-35174. PubMed ID: 32657115
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.