These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

240 related articles for article (PubMed ID: 27758108)

  • 1. Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al
    Tang K; Meng AC; Droopad R; McIntyre PC
    ACS Appl Mater Interfaces; 2016 Nov; 8(44):30601-30607. PubMed ID: 27758108
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Modulating the interface quality and electrical properties of HfTiO/InGaAs gate stack by atomic-layer-deposition-derived Al₂O₃ passivation layer.
    He G; Gao J; Chen H; Cui J; Sun Z; Chen X
    ACS Appl Mater Interfaces; 2014 Dec; 6(24):22013-25. PubMed ID: 25471009
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al
    Tang K; Palumbo FR; Zhang L; Droopad R; McIntyre PC
    ACS Appl Mater Interfaces; 2017 Mar; 9(8):7819-7825. PubMed ID: 28152310
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface.
    Winter R; Shekhter P; Tang K; Floreano L; Verdini A; McIntyre PC; Eizenberg M
    ACS Appl Mater Interfaces; 2016 Jul; 8(26):16979-84. PubMed ID: 27282201
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition.
    Zhernokletov DM; Negara MA; Long RD; Aloni S; Nordlund D; McIntyre PC
    ACS Appl Mater Interfaces; 2015 Jun; 7(23):12774-80. PubMed ID: 25988586
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Interface properties of atomic layer deposited TiO2/Al2O3 films on In(0.53)Ga(0.47)As/InP substrates.
    Mukherjee C; Das T; Mahata C; Maiti CK; Chia CK; Chiam SY; Chi DZ; Dalapati GK
    ACS Appl Mater Interfaces; 2014 Mar; 6(5):3263-74. PubMed ID: 24472090
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Interface Chemistry and Dielectric Optimization of TMA-Passivated high-
    Wang D; He G; Hao L; Qiao L; Fang Z; Liu J
    ACS Appl Mater Interfaces; 2020 Jun; 12(22):25390-25399. PubMed ID: 32383855
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Interface Optimization and Transport Modulation of Sm
    Lu J; He G; Yan J; Dai Z; Zheng G; Jiang S; Qiao L; Gao Q; Fang Z
    Nanomaterials (Basel); 2021 Dec; 11(12):. PubMed ID: 34947792
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Interface Optimization and Performance Enhancement of Er
    Wu Q; Yu Q; He G; Wang W; Lu J; Yao B; Liu S; Fang Z
    Nanomaterials (Basel); 2023 May; 13(11):. PubMed ID: 37299643
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Charge-trapping characteristics of Al2O3/Cu/Al2O3 nanolaminate structures prepared through atomic layer deposition.
    Lee BK; Kim SH; Park BK; Lee SS; Hwang JH; Chung TM; Lee YK; Kim CG; An KS
    J Nanosci Nanotechnol; 2011 Jul; 11(7):5887-91. PubMed ID: 22121626
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.
    Zhang L; Li H; Guo Y; Tang K; Woicik J; Robertson J; McIntyre PC
    ACS Appl Mater Interfaces; 2015 Sep; 7(37):20499-506. PubMed ID: 26334784
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.
    Zhang L; Guo Y; Hassan VV; Tang K; Foad MA; Woicik JC; Pianetta P; Robertson J; McIntyre PC
    ACS Appl Mater Interfaces; 2016 Jul; 8(29):19110-8. PubMed ID: 27345195
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Engineering High- k/SiGe Interface with ALD Oxide for Selective GeO
    Kavrik MS; Ercius P; Cheung J; Tang K; Wang Q; Fruhberger B; Kim M; Taur Y; McIntyre PC; Kummel AC
    ACS Appl Mater Interfaces; 2019 Apr; 11(16):15111-15121. PubMed ID: 30938163
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Characterization of Electrical Traps Formed in Al
    Rahman MM; Shin KY; Kim TW
    Materials (Basel); 2020 Dec; 13(24):. PubMed ID: 33352772
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Interface Electrical Properties of Al
    Fisichella G; Schilirò E; Di Franco S; Fiorenza P; Lo Nigro R; Roccaforte F; Ravesi S; Giannazzo F
    ACS Appl Mater Interfaces; 2017 Mar; 9(8):7761-7771. PubMed ID: 28135063
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices.
    Negara MA; Kitano M; Long RD; McIntyre PC
    ACS Appl Mater Interfaces; 2016 Aug; 8(32):21089-94. PubMed ID: 27459343
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Probing the Dielectric Properties of Ultrathin Al/Al
    Acharya J; Wilt J; Liu B; Wu J
    ACS Appl Mater Interfaces; 2018 Jan; 10(3):3112-3120. PubMed ID: 29293311
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Structural evolution and the control of defects in atomic layer deposited HfO2-Al2O3 stacked films on GaAs.
    Kang YS; Kim DK; Jeong KS; Cho MH; Kim CY; Chung KB; Kim H; Kim DC
    ACS Appl Mater Interfaces; 2013 Mar; 5(6):1982-9. PubMed ID: 23438318
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Atomic imaging of atomic layer deposition oxide nucleation with trimethylaluminum on As-rich InGaAs(001) 2 × 4 vs Ga/In-rich InGaAs(001) 4 × 2.
    Melitz W; Kent T; Kummel AC; Droopad R; Holland M; Thayne I
    J Chem Phys; 2012 Apr; 136(15):154706. PubMed ID: 22519342
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices.
    Calzolaro A; Mikolajick T; Wachowiak A
    Materials (Basel); 2022 Jan; 15(3):. PubMed ID: 35160737
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 12.