259 related articles for article (PubMed ID: 27766884)
1. Strain-Induced Band Gap Engineering in Selectively Grown GaN-(Al,Ga)N Core-Shell Nanowire Heterostructures.
Hetzl M; Kraut M; Winnerl J; Francaviglia L; Döblinger M; Matich S; Fontcuberta I Morral A; Stutzmann M
Nano Lett; 2016 Nov; 16(11):7098-7106. PubMed ID: 27766884
[TBL] [Abstract][Full Text] [Related]
2. Surface passivation and self-regulated shell growth in selective area-grown GaN-(Al,Ga)N core-shell nanowires.
Hetzl M; Winnerl J; Francaviglia L; Kraut M; Döblinger M; Matich S; Fontcuberta I Morral A; Stutzmann M
Nanoscale; 2017 Jun; 9(21):7179-7188. PubMed ID: 28513695
[TBL] [Abstract][Full Text] [Related]
3. Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy.
Sinito C; Corfdir P; Pfüller C; Gao G; Bartolomé J; Kölling S; Rodil Doblado A; Jahn U; Lähnemann J; Auzelle T; Zettler JK; Flissikowski T; Koenraad P; Grahn HT; Geelhaar L; Fernández-Garrido S; Brandt O
Nano Lett; 2019 Sep; 19(9):5938-5948. PubMed ID: 31385709
[TBL] [Abstract][Full Text] [Related]
4. Tailoring the morphology and luminescence of GaN/InGaN core-shell nanowires using bottom-up selective-area epitaxy.
Nami M; Eller RF; Okur S; Rishinaramangalam AK; Liu S; Brener I; Feezell DF
Nanotechnology; 2017 Jan; 28(2):025202. PubMed ID: 27905321
[TBL] [Abstract][Full Text] [Related]
5. Structural and electrical characterization of monolithic core-double shell n-GaN/Al/p-AlGaN nanowire heterostructures grown by molecular beam epitaxy.
Sadaf SM; Ra YH; Zhao S; Szkopek T; Mi Z
Nanoscale; 2019 Mar; 11(9):3888-3895. PubMed ID: 30758042
[TBL] [Abstract][Full Text] [Related]
6. Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al(Ga)N Nanowire and Planar Heterostructures.
Aiello A; Wu Y; Pandey A; Wang P; Lee W; Bayerl D; Sanders N; Deng Z; Gim J; Sun K; Hovden R; Kioupakis E; Mi Z; Bhattacharya P
Nano Lett; 2019 Nov; 19(11):7852-7858. PubMed ID: 31573819
[TBL] [Abstract][Full Text] [Related]
7. Photoluminescence polarization in strained GaN/AlGaN core/shell nanowires.
Jacopin G; Rigutti L; Bellei S; Lavenus P; Julien FH; Davydov AV; Tsvetkov D; Bertness KA; Sanford NA; Schlager JB; Tchernycheva M
Nanotechnology; 2012 Aug; 23(32):325701. PubMed ID: 22802219
[TBL] [Abstract][Full Text] [Related]
8. Correlated Nanoscale Analysis of the Emission from Wurtzite versus Zincblende (In,Ga)As/GaAs Nanowire Core-Shell Quantum Wells.
Lähnemann J; Hill MO; Herranz J; Marquardt O; Gao G; Al Hassan A; Davtyan A; Hruszkewycz SO; Holt MV; Huang C; Calvo-Almazán I; Jahn U; Pietsch U; Lauhon LJ; Geelhaar L
Nano Lett; 2019 Jul; 19(7):4448-4457. PubMed ID: 31141672
[TBL] [Abstract][Full Text] [Related]
9. Controlled synthesis of AlN/GaN multiple quantum well nanowire structures and their optical properties.
Qian F; Brewster M; Lim SK; Ling Y; Greene C; Laboutin O; Johnson JW; Gradečak S; Cao Y; Li Y
Nano Lett; 2012 Jun; 12(6):3344-50. PubMed ID: 22594533
[TBL] [Abstract][Full Text] [Related]
10. The structural properties of GaN/AlN core-shell nanocolumn heterostructures.
Hestroffer K; Mata R; Camacho D; Leclere C; Tourbot G; Niquet YM; Cros A; Bougerol C; Renevier H; Daudin B
Nanotechnology; 2010 Oct; 21(41):415702. PubMed ID: 20844326
[TBL] [Abstract][Full Text] [Related]
11. Strain-induced structural defects and their effects on the electrochemical performances of silicon core/germanium shell nanowire heterostructures.
Lin YC; Kim D; Li Z; Nguyen BM; Li N; Zhang S; Yoo J
Nanoscale; 2017 Jan; 9(3):1213-1220. PubMed ID: 28050613
[TBL] [Abstract][Full Text] [Related]
12. Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core-shell nanowires emitting in the green spectral range.
van Treeck D; Lähnemann J; Brandt O; Geelhaar L
Nanotechnology; 2023 Sep; 34(48):. PubMed ID: 37625397
[TBL] [Abstract][Full Text] [Related]
13. Radial modulation doping in core-shell nanowires.
Dillen DC; Kim K; Liu ES; Tutuc E
Nat Nanotechnol; 2014 Feb; 9(2):116-20. PubMed ID: 24441982
[TBL] [Abstract][Full Text] [Related]
14. Core-shell
Brubaker MD; Genter KL; Weber JC; Spann BT; Roshko A; Blanchard PT; Harvey TE; Bertness KA
Proc SPIE Int Soc Opt Eng; 2018; 10725():. PubMed ID: 33343056
[TBL] [Abstract][Full Text] [Related]
15. From GaN to ZnGa(2)O(4) through a low-temperature process: nanotube and heterostructure arrays.
Lu MY; Zhou X; Chiu CY; Crawford S; Gradečak S
ACS Appl Mater Interfaces; 2014 Jan; 6(2):882-7. PubMed ID: 24354279
[TBL] [Abstract][Full Text] [Related]
16. Visualizing highly localized luminescence in GaN/AlN heterostructures in nanowires.
Zagonel LF; Rigutti L; Tchernycheva M; Jacopin G; Songmuang R; Kociak M
Nanotechnology; 2012 Nov; 23(45):455205. PubMed ID: 23090422
[TBL] [Abstract][Full Text] [Related]
17. Probing the strain effect on near band edge emission of a curved ZnO nanowire via spatially resolved cathodoluminescence.
Xue H; Pan N; Li M; Wu Y; Wang X; Hou JG
Nanotechnology; 2010 May; 21(21):215701. PubMed ID: 20431205
[TBL] [Abstract][Full Text] [Related]
18. Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP-InP Core-Shell Nanowires.
Göransson DJO; Borgström MT; Huang YQ; Messing ME; Hessman D; Buyanova IA; Chen WM; Xu HQ
Nano Lett; 2019 Apr; 19(4):2674-2681. PubMed ID: 30908918
[TBL] [Abstract][Full Text] [Related]
19. UV LEDs based on p-i-n core-shell AlGaN/GaN nanowire heterostructures grown by N-polar selective area epitaxy.
Brubaker MD; Genter KL; Roshko A; Blanchard PT; Spann BT; Harvey TE; Bertness KA
Nanotechnology; 2019 Jun; 30(23):234001. PubMed ID: 30776789
[TBL] [Abstract][Full Text] [Related]
20. Sub-nanometer mapping of strain-induced band structure variations in planar nanowire core-shell heterostructures.
Martí-Sánchez S; Botifoll M; Oksenberg E; Koch C; Borja C; Spadaro MC; Di Giulio V; Ramasse Q; García de Abajo FJ; Joselevich E; Arbiol J
Nat Commun; 2022 Jul; 13(1):4089. PubMed ID: 35835772
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
