164 related articles for article (PubMed ID: 27824123)
1. Evidences for redox reaction driven charge transfer and mass transport in metal-assisted chemical etching of silicon.
Kong L; Dasgupta B; Ren Y; Mohseni PK; Hong M; Li X; Chim WK; Chiam SY
Sci Rep; 2016 Nov; 6():36582. PubMed ID: 27824123
[TBL] [Abstract][Full Text] [Related]
2. Self-Anchored Catalyst Interface Enables Ordered Via Array Formation from Submicrometer to Millimeter Scale for Polycrystalline and Single-Crystalline Silicon.
Kim JD; Kim M; Kong L; Mohseni PK; Ranganathan S; Pachamuthu J; Chim WK; Chiam SY; Coleman JJ; Li X
ACS Appl Mater Interfaces; 2018 Mar; 10(10):9116-9122. PubMed ID: 29406759
[TBL] [Abstract][Full Text] [Related]
3. CMOS-Compatible Catalyst for MacEtch: Titanium Nitride-Assisted Chemical Etching in Vapor phase for High Aspect Ratio Silicon Nanostructures.
Kim JD; Kim M; Chan C; Draeger N; Coleman JJ; Li X
ACS Appl Mater Interfaces; 2019 Jul; 11(30):27371-27377. PubMed ID: 31265223
[TBL] [Abstract][Full Text] [Related]
4. Ag-mediated charge transport during metal-assisted chemical etching of silicon nanowires.
Geyer N; Fuhrmann B; Leipner HS; Werner P
ACS Appl Mater Interfaces; 2013 May; 5(10):4302-8. PubMed ID: 23635321
[TBL] [Abstract][Full Text] [Related]
5. Sub-100 nm Si nanowire and nano-sheet array formation by MacEtch using a non-lithographic InAs nanowire mask.
Shin JC; Zhang C; Li X
Nanotechnology; 2012 Aug; 23(30):305305. PubMed ID: 22781145
[TBL] [Abstract][Full Text] [Related]
6. Fabrication of Suspended III-V Nanofoils by Inverse Metal-Assisted Chemical Etching of In
Wilhelm TS; Soule CW; Baboli MA; O'Connell CJ; Mohseni PK
ACS Appl Mater Interfaces; 2018 Jan; 10(2):2058-2066. PubMed ID: 29303241
[TBL] [Abstract][Full Text] [Related]
7. Versatile control of metal-assisted chemical etching for vertical silicon microwire arrays and their photovoltaic applications.
Um HD; Kim N; Lee K; Hwang I; Hoon Seo J; Yu YJ; Duane P; Wober M; Seo K
Sci Rep; 2015 Jun; 5():11277. PubMed ID: 26060095
[TBL] [Abstract][Full Text] [Related]
8. Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching.
Kong L; Song Y; Kim JD; Yu L; Wasserman D; Chim WK; Chiam SY; Li X
ACS Nano; 2017 Oct; 11(10):10193-10205. PubMed ID: 28880533
[TBL] [Abstract][Full Text] [Related]
9. Silicon Nanostructures Produced by Modified MacEtch Method for Antireflective Si Surface.
Nichkalo S; Druzhinin A; Evtukh A; Bratus' O; Steblova O
Nanoscale Res Lett; 2017 Dec; 12(1):106. PubMed ID: 28209027
[TBL] [Abstract][Full Text] [Related]
10. Metal assisted anodic etching of silicon.
Lai CQ; Zheng W; Choi WK; Thompson CV
Nanoscale; 2015 Jul; 7(25):11123-34. PubMed ID: 26059556
[TBL] [Abstract][Full Text] [Related]
11. Ordered Al
Wilhelm TS; Wang Z; Baboli MA; Yan J; Preble SF; Mohseni PK
ACS Appl Mater Interfaces; 2018 Aug; 10(32):27488-27497. PubMed ID: 30079732
[TBL] [Abstract][Full Text] [Related]
12. In Situ PL and SPV Monitored Charge Carrier Injection During Metal Assisted Etching of Intrinsic a-Si Layers on c-Si.
Greil SM; Rappich J; Korte L; Bastide S
ACS Appl Mater Interfaces; 2015 Jun; 7(21):11654-9. PubMed ID: 25965159
[TBL] [Abstract][Full Text] [Related]
13. Silicon nanowires with controlled sidewall profile and roughness fabricated by thin-film dewetting and metal-assisted chemical etching.
Azeredo BP; Sadhu J; Ma J; Jacobs K; Kim J; Lee K; Eraker JH; Li X; Sinha S; Fang N; Ferreira P; Hsu K
Nanotechnology; 2013 Jun; 24(22):225305. PubMed ID: 23644697
[TBL] [Abstract][Full Text] [Related]
14. Porosity control in metal-assisted chemical etching of degenerately doped silicon nanowires.
Balasundaram K; Sadhu JS; Shin JC; Azeredo B; Chanda D; Malik M; Hsu K; Rogers JA; Ferreira P; Sinha S; Li X
Nanotechnology; 2012 Aug; 23(30):305304. PubMed ID: 22781120
[TBL] [Abstract][Full Text] [Related]
15. Transient Clustering of Reaction Intermediates during Wet Etching of Silicon Nanostructures.
Aabdin Z; Xu XM; Sen S; Anand U; Král P; Holsteyns F; Mirsaidov U
Nano Lett; 2017 May; 17(5):2953-2958. PubMed ID: 28418255
[TBL] [Abstract][Full Text] [Related]
16. Ruthenium-Assisted Chemical Etching of Silicon: Enabling CMOS-Compatible 3D Semiconductor Device Nanofabrication.
Mallavarapu A; Ajay P; Barrera C; Sreenivasan SV
ACS Appl Mater Interfaces; 2021 Jan; 13(1):1169-1177. PubMed ID: 33348977
[TBL] [Abstract][Full Text] [Related]
17. Metal-assisted chemical etching beyond Si: applications to III-V compounds and wide-bandgap semiconductors.
Znati S; Wharwood J; Tezanos KG; Li X; Mohseni PK
Nanoscale; 2024 Jun; 16(23):10901-10946. PubMed ID: 38804075
[TBL] [Abstract][Full Text] [Related]
18. Microfabrication of X-ray Optics by Metal Assisted Chemical Etching: A Review.
Romano L; Stampanoni M
Micromachines (Basel); 2020 Jun; 11(6):. PubMed ID: 32545633
[TBL] [Abstract][Full Text] [Related]
19. The mechanism of galvanic/metal-assisted etching of silicon.
Kolasinski KW
Nanoscale Res Lett; 2014; 9(1):432. PubMed ID: 25221459
[TBL] [Abstract][Full Text] [Related]
20. Gold-thickness-dependent Schottky barrier height for charge transfer in metal-assisted chemical etching of silicon.
Zuo Z; Cui G; Shi Y; Liu Y; Ji G
Nanoscale Res Lett; 2013 Apr; 8(1):193. PubMed ID: 23618313
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
