These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

170 related articles for article (PubMed ID: 27828246)

  • 1. Optical characteristics of InGaN/GaN light-emitting diodes depending on wafer bowing controlled by laser-treated grid patterns.
    Lee K; Lee CR; Chung TH; Kim YS; Jeong KU; Kim JS
    Opt Express; 2016 Oct; 24(21):24153-24160. PubMed ID: 27828246
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Effect of Sapphire Substrate Thickness on the Characteristics of 450 nm InGaN/GaN Multi-Quantum Well Light-Emitting Diodes.
    Tawfik WZ; Bea SJ; Yang SB; Ryu SW; Lee JK
    J Nanosci Nanotechnol; 2015 Jul; 15(7):5140-3. PubMed ID: 26373092
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Enhanced electroluminescence of a-plane InGaN light emitting diodes grown on oxide-patterned r-plane sapphire substrates.
    Hwang SM; Song H; Seo YG; Son JS; Kim J; Baik KH
    Opt Express; 2011 Nov; 19(23):23036-41. PubMed ID: 22109183
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Recent Advances in Nonpolar and Semipolar InGaN Light-Emitting Diodes (LEDs).
    Jang J; Woo S; Min D; Nam O
    J Nanosci Nanotechnol; 2015 Mar; 15(3):1895-906. PubMed ID: 26413605
    [TBL] [Abstract][Full Text] [Related]  

  • 5. InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate.
    Ke WC; Lee FW; Chiang CY; Liang ZY; Chen WK; Seong TY
    ACS Appl Mater Interfaces; 2016 Dec; 8(50):34520-34529. PubMed ID: 27998131
    [TBL] [Abstract][Full Text] [Related]  

  • 6. [Optical characteristics of InGaN/GaN light emitting diodes on patterned sapphire substrate].
    Yan J; Zhong CT; Yu TJ; Xu CL; Tao YB; Zhang GY
    Guang Pu Xue Yu Guang Pu Fen Xi; 2012 Jan; 32(1):7-10. PubMed ID: 22497115
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer.
    Hu H; Zhou S; Wan H; Liu X; Li N; Xu H
    Sci Rep; 2019 Mar; 9(1):3447. PubMed ID: 30837579
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates.
    Li H; Khoury M; Bonef B; Alhassan AI; Mughal AJ; Azimah E; Samsudin MEA; De Mierry P; Nakamura S; Speck JS; DenBaars SP
    ACS Appl Mater Interfaces; 2017 Oct; 9(41):36417-36422. PubMed ID: 28960058
    [TBL] [Abstract][Full Text] [Related]  

  • 9. GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.
    Chang HM; Lai WC; Chen WS; Chang SJ
    Opt Express; 2015 Apr; 23(7):A337-45. PubMed ID: 25968799
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Improved light extraction efficiency of InGaN-based multi-quantum well light emitting diodes by using a single die growth.
    Park MJ; Kwon KW; Kim YH; Park SH; Kwak JS
    J Nanosci Nanotechnol; 2011 May; 11(5):4484-7. PubMed ID: 21780482
    [TBL] [Abstract][Full Text] [Related]  

  • 11. InGaN-based light-emitting diodes with an embedded conical air-voids structure.
    Huang YC; Lin CF; Chen SH; Dai JJ; Wang GM; Huang KP; Chen KT; Hsu YH
    Opt Express; 2011 Jan; 19 Suppl 1():A57-63. PubMed ID: 21263713
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Bendable InGaN Light-Emitting Nanomembranes with Tunable Emission Wavelength.
    Lin CF; Su CL; Wu HM; Chen YY; Huang BS; Huang KL; Shieh BC; Liu HJ; Han J
    ACS Appl Mater Interfaces; 2018 Oct; 10(43):37725-37731. PubMed ID: 30277061
    [TBL] [Abstract][Full Text] [Related]  

  • 13. The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes.
    Tsai MT; Chu CM; Huang CH; Wu YH; Chiu CH; Li ZY; Tu PM; Lee WI; Kuo HC
    Nanoscale Res Lett; 2014 Dec; 9(1):2418. PubMed ID: 26088993
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer.
    Lee KJ; Chun J; Kim SJ; Oh S; Ha CS; Park JW; Lee SJ; Song JC; Baek JH; Park SJ
    Opt Express; 2016 Mar; 24(5):4391-4398. PubMed ID: 29092267
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots.
    Li H; Li P; Kang J; Ding J; Ma J; Zhang Y; Yi X; Wang G
    Sci Rep; 2016 Oct; 6():35217. PubMed ID: 27734917
    [TBL] [Abstract][Full Text] [Related]  

  • 16. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes.
    Nakamura S
    Science; 1998 Aug; 281(5379):955-61. PubMed ID: 9703504
    [TBL] [Abstract][Full Text] [Related]  

  • 17. InGaN light emitting diodes with a laser-treated tapered GaN structure.
    Huang WC; Lin CF; Hsieh TH; Chen SH; Lin MS; Chen KT; Lin CM; Chen SH; Han P
    Opt Express; 2011 Sep; 19 Suppl 5():A1126-34. PubMed ID: 21935255
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs.
    You YH; Su VC; Ho TE; Lin BW; Lee ML; Das A; Hsu WC; Kuan CH; Lin RM
    Nanoscale Res Lett; 2014; 9(1):596. PubMed ID: 25392706
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays.
    Huang YY; Chen LY; Chang CH; Sun YH; Cheng YW; Ke MY; Lu YH; Kuo HC; Huang J
    Nanotechnology; 2011 Jan; 22(4):045202. PubMed ID: 21157011
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Single nanowire green InGaN/GaN light emitting diodes.
    Zhang G; Li Z; Yuan X; Wang F; Fu L; Zhuang Z; Ren FF; Bin Liu ; Zhang R; Tan HH; Jagadish C
    Nanotechnology; 2016 Oct; 27(43):435205. PubMed ID: 27659444
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.